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  • 1985-1989  (8)
  • 1980-1984  (4)
  • 1
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    The @journal of organic chemistry 46 (1981), S. 2029-2045 
    ISSN: 1520-6904
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1665-1667 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin (11.4 nm) gate quality silicon dioxide films were subjected to high-temperature (850–1150 °C) rapid thermal nitridation cycles in ultrapure ammonia. Secondary-ion mass spectroscopy and neutron depth profiling results indicate a significant level of nitrogen diffusion into the silicon substrate. After stripping the dielectric layers, Schottky diode studies were performed using an electrolyte-based technique. We found, for the first time, the formation of nitridation-induced ultrathin (less than 60 nm) n-type layers at the top surface of nominally p-type silicon substrates used in the study. A nitrogen-oxygen donor complex formation mechanism is invoked to explain the presence of the ultrathin n-type layers.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1139-1141 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electrical properties and integrity of oxides grown on textured single-crystal silicon (TSC oxides) are investigated and are compared to oxides grown on untextured single-crystal silicon (normal oxides) and oxides grown on polycrystalline silicon (polyoxides). The 230 A(ring) TSC oxide exhibited enhanced electron injection in both polarities, reducing the voltage necessary for JG=+1 mA/cm2 from 21 V for normal 230 A(ring) oxides to 5 V. This made the 230 A(ring) TSC oxide approximately equivalent to a 60 A(ring) normal oxide. The electron trapping rate for the TSC oxide was similar to that of 230 A(ring) normal oxides but is much smaller than that of polyoxides. Charge-to-breakdown (QBD) measurements showed a much better QBD histogram (large area capacitors) for the TSC oxide than for 230 A(ring) and 60 A(ring) normal oxides.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1674-1676 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new mechanism is proposed for Si incorporation in GaAs-on-Si heteroepitaxial layers grown by metalorganic chemical vapor deposition. This mechanism involves gas phase transport of the Si to the heteroepitaxial layers during growth. This mode of Si uptake could operate in addition to the previously proposed mechanism of Si incorporation by enhanced diffusion from the heterointerface through defects in the GaAs layer.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2090-2092 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Enhanced incorporation of Si is observed in the metalorganic chemical vapor deposition of homoepitaxial GaAs layers, grown in the presence of Si substrates placed adjacent to the GaAs substrates in the reactor. The electron concentrations of the GaAs layers are a function of the proximity to the Si substrates and the growth temperature, and do not appear to depend on the location of the Si substrates relative to the flow direction of the carrier gases and the type of reactor used for the growth, i.e., horizontal or vertical. Reduction in electron concentrations is observed when Si substrates are covered with passivating layers of either SiO2 or Si3N4. These results provide evidence of a gas phase reaction and transport of Si to the growing GaAs layers.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1409-1412 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A pressure vessel for neutron diffraction of liquids up to 20 kbar is described. It was made of one or two aluminum-alloy cylinders, having ultimate strengths of ∼6.5 kbar, that were supported radially by three steel supporting rings, which left two 6-mm-wide gaps for the passage of neutrons. The cylinders were supported longitudinally by a force of 300 tonnes applied to the ends of the vessel by a hydraulic press. The experimental fluid was pressurized in another vessel and piped into the diffraction vessel.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Springer
    Bulletin of mathematical biology 42 (1980), S. 305-325 
    ISSN: 1522-9602
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie , Mathematik
    Notizen: Abstract The purpose of this paper is to justify an asymptotic method developed for the study of peristaltic transport in a tube of arbitrary cross section. Within the framework of long wave approximation, the three-dimensional nonlinear Navier-Stokes equations are reduced to a sequence of two-dimensional linear boundary value problems of Laplace and biharmonic operators. It is shown that, if a Reynolds number is less than some constant, the solution of the approximate equations is indeed an asymptotic approximation to the exact solution of the problem as the ratio of the maximum radius of the tube to the wave length of the peristaltic motion of the wall tends to zero, and the error estimates are expressed inL 2 norms. Furthermore, under the same condition the exact solution is shown to be unique and stable under arbitrary perturbation of spatially periodic disturbance. Application of the stability condition to peristaltic transport in a tube of circular cross section is given.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Springer
    Urological research 15 (1987), S. 13-16 
    ISSN: 1434-0879
    Schlagwort(e): Bladder cancer ; Intravesical chemotherapy
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin
    Notizen: Summary The clonogenic survival of MGH-U1 human bladder carcinoma cells treated with melphalan, cisplatin, mitomycin-C, adriamycin, vincristine and 5-fluorouracil was measured to determine the relative contribution of drug concentration and duration of exposure to cytotoxicity and to measure the relative cytotoxic effects of these agents used in intravesical chemotherapy. The survival curves were plotted as a function of log (CxT) and were fitted using a linear least squares analysis. The survival was the same for any given CxT whether this was determined by varying concentration or by varying the duration of exposure in the cases of melphalan, cisplatin, adriamycin, mitomycin-C and 5-fluorouracil. However, duration of exposure was more important than was drug concentration in the case of vincristine cytotoxicity. By utilizing the slope of the log (survival fraction) as a function of log (CxT), the relative cytotoxicity of each agent was determined. Mitomycin C, melphalan, adriamycin and cisplatin had comparable activity in this cell line, whereas vincristine and 5-fluorouracil demonstrated much lower cytotoxicity. We conclude that: 1) mitomycin-C, adriamycin and melphalan were the agents with the greatest cytotoxic efficacy; 2) determination of survival as a function of CxT can be used to separate the relative importance of concentration and of duration of exposure. 3) the cytotoxicity of 5/6 drugs studied was equal when the CxT was kept constant but concentration and exposure times were varied.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Springer
    Digestive diseases and sciences 33 (1988), S. 774-778 
    ISSN: 1573-2568
    Schlagwort(e): gastric acid ; gastrins ; gastritis ; hemodialysis ; peptic ulcer ; uremia
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin
    Notizen: Abstract Renal failure is said to be a risk factor for peptic ulceration, although most previous studies were small and utilized radiology rather than endoscopy for diagnosis. We endoscoped 114 of 126 patients with end-stage renal failure on maintenance hemodialysis and found peptic ulcer in two (2%);one other patient not endoscoped had previously undergone ulcer surgery. Erythema, petechial spots, or erosions were found in another 58 patients (51%). The ranges of gastric acid output and serum gastrin were wide and were inversely correlated. The prevalence of peptic ulcer among patients on hemodialysis therefore appeared to be no higher than that in the general population. Elevated serum gastrin levels may be a response to hypochlorhydria.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Springer
    Journal of nondestructive evaluation 1 (1980), S. 207-213 
    ISSN: 1573-4862
    Schlagwort(e): residual stress ; x-ray diffraction ; stainless steel ; fatigue ; martensite
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Mathematik
    Notizen: Abstract The progress of fatigue damage in type 304L solution treated stainless steel was studied by surface residual stress measurements and measurements of the formation of martensite, as determined from x-ray diffraction techniques. The specimen was subjected to tension-tension (R=0.1) cycling in air at a maximum stress σmax=422 MPa, which was approximately 160% off the yield stress. The initial longitudinal residual stress distribution was determined for 13 locations along the gage length and found to vary around −80±17 MPa (compression). After several fatigue cycles, the residual stress changes to approximately +115±17 MPa (tension). At about 7% of the life (N/N f =0.07), the variation of the residual stress along the gage length reaches a minimum. With additional cycling, the residual stress first drops, reaching a minimum at approximately 10% of the life (100±8 MPa), then increases to a maximum at between 20 and 40% of the life (125±18MPa), followed by a marked relaxation to a minimum of 90±18 MPa at approximately 65% of the life. The surface martensite content of the sample continuously increases from its initial value of around 0.6%, first slowly up to 10% of the total fatigue life, and more rapidly thereafter to final failure. On the basis of additional measurements of the residual stress and martensite content as a function of depth below the surface, surface layer hardening of austenite and martensite is suggested as the principal reason for the residual stress development.
    Materialart: Digitale Medien
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