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  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of the thermal expansion of semiconductors CdIn2S4 and CdInGaS4 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 732-734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal expansion of the compound semiconductors CdIn2S4 and CdInGaS4 has been investigated on single crystals between 120 and 570 K. At high temperatures the anharmonic effects in lattice vibrations of the (parallel)c-axis direction in CdInGaS4 is similar to that in the ⊥c-axis direction, and that in CdIn2S4 is similar to that in CdInGaS4 in spite of the diverse crystal structures. The characteristic temperature (corresponding to Debye temperatures) for CdIn2S4 is 175±10 K, and for CdInGaS4 it is 200±10 K ((parallel)c axis) and 161±10 K (⊥c axis), respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339755
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Hydrostatic pressure dependence of the optical absorption edge in Bi12SiO20 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2065-2066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical absorption coefficients in Bi12SiO20 have been measured precisely at various hydrostatic pressures up to 40 kbar at room temperature. The interband gap for the indirect allowed transition was found to have a pressure coefficient (∂Eg/∂P)T of −1.20×10−6 eV/bar. Using the result of the pressure coefficient, it was indicated that the electron-phonon interaction was dominant in the temperature dependence of the indirect energy gap in Bi12SiO20.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338006
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Hydrostatic pressure dependence of the exponential optical absorption in CdInGaS4 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 434-436 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical-absorption spectra in the semiconductor CdInGaS4 have been measured precisely at various hydrostatic pressures up to 20 kbar, and analyzed in the region below the fundamental absorption edges. It can be seen that the absorption coefficients plotted semilogarithmically vary linearly with photon energy below the fundamental absorption edges at each hydrostatic pressure. The steepness of the absorption edge is proportional to the inverse of hydrostatic pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338844
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrostatic pressure dependence of the exponential optical absorption in Bi12SiO20 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2012-2015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical-absorption spectra in Bi12SiO20 have been measured precisely at various hydrostatic pressure up to 40 kbar, and analyzed in the region below the fundamental absorption edges. It can be seen that the optical-absorption coefficients plotted semilogarithmically vary linearly with photon energy below the fundamental absorption edges at each hydrostatic pressure. The steepness of the absorption edge decreases with increasing pressure up to 10 kbar and then it shows constant value. The broad shoulders below 3.1-eV photon energy are shown, and the optical-absorption coefficients in those regions increase with increasing pressure up to 10 kbar.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339543
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    An attempt to reduce the photosensitizing potential of chlorpromazine with the simultaneous use of β- and dimethyl-β-cyclodextrins in guinea pigs (1989)
    Springer
    Archives of dermatological research 281 (1989), S. 60-65 
    Details
    ISSN: 1432-069X
    Keywords: Chlorpromazine ; β-Cyclodextrin ; Dimethyl-β-cyclodextrin ; Inclusion complex ; Photoallergic contact dermatitis ; Skin penetration ; Photochemical reactivity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The effects of topically applied β-cyclodextrin (β-CyD) and heptakis(2,6-di-O-methyl)-β-cyclodextrin (DM-β-CyD) on photoallergic contact dermatitis due to chlorpromazine hydrochloride (CPZ) were investigated using the photomaximization technique in guinea pigs. From the gross and histological observations, the photosensitizing potential of CPZ with the simultaneous topical use of β-CyDs was significantly lower than that of CPZ alone. The alleviating efficacy of DM-β-CyD was greater than that of β-CyD. β-CyDs suppressed the penetration of CPZ into the skin through the formation of poorly skin-permeable complexes. In addition, β-CyDs inhibited (a) the photoinduced free radicals derived from CPZ in the isolated dry skin and (b) the in vitro photochemical binding of CPZ to bovine serum albumin. These observations suggest that β-CyDs suppress the photochemical reactions between CPZ and biological macromolecules present in the skin, resulting in the failure to form a photoantigen. The present results indicate that DM-β-CyD is particularly effective in alleviating photoallergic contact dermatitis due to CPZ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00424275
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    Paper (German National Licenses)
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