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  • 1
    Electronic Resource
    Electronic Resource
    Annealing of Cd-implanted GaAs: Defect removal, lattice site occupation, and electrical activation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4248-4256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic investigation of the behavior of Cd-implanted GaAs after rapid thermal annealing is presented. The use of various experimental techniques gives a detailed picture regarding the annealing process in the low-dose regime (1012 and 1013 cm−2) on a microscopic as well as on a macroscopic scale. Perturbed angular correlation experiments, using the radioactive probe 111mCd, yield information on the immediate environment of the Cd implant on an atomic scale. Rutherford backscattering channeling and photoluminescence spectroscopy give complementary information concerning the overall damage level in the implanted layer, Hall measurements are used to determine the degree of electrical activation of the implanted Cd acceptors. The outdiffusion of the implanted radioactive Cd atoms is also investigated. The removal of defects in the next-nearest neighborhood of the Cd atoms takes place after annealing at 700 K and is accompanied by a general recovering of the crystal lattice. Between 600 and 900 K more distant defects are removed. The observed outdiffusion of about one-third of the dopant atoms after annealing above 600 K is discussed in context with their partial incorporation in extended defects. Although already at 700 K, 80% of the implanted Cd atoms are on substitutional lattice sites with no defects in their immediate environment, an annealing temperature in excess of 1000 K is necessary to obtain electrical activation of the implants. It is concluded that compensating defects, present in ion-implanted GaAs, are the reason for the significantly higher temperature required for electrical activation as compared to the incorporation of the dopants on defect-free, substitutional lattice sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354039
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  • 2
    Electronic Resource
    Electronic Resource
    Ga2O3 films for electronic and optoelectronic applications (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 686-693 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Properties of Ga2O3 thin films deposited by electron-beam evaporation from a high-purity single-crystal Gd3Ga5O12 source are reported. As-deposited Ga2O3 films are amorphous, stoichiometric, and homogeneous. Excellent uniformity in thickness and refractive index was obtained over a 2 in. wafer. The films maintain their integrity during annealing up to 800 and 1200 °C on GaAs and Si substrates, respectively. Optical properties including refractive index (n=1.84–1.88 at 980 nm wavelength) and band gap (4.4 eV) are close or identical, respectively, to Ga2O3 bulk properties. Reflectivities as low as 10−5 for Ga2O3/GaAs structures and a small absorption coefficient (≈100 cm−1 at 980 nm) were measured. Dielectric properties include a static dielectric constant between 9.9 and 10.2, which is identical to bulk Ga2O3, and electric breakdown fields up to 3.6 MV/cm. The Ga2O3/GaAs interface demonstrated a significantly higher photoluminescence intensity and thus a lower surface recombination velocity as compared to Al2O3/GaAs structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359055
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic properties of metal/sol-gel SiO2/indium-phosphode capacitor (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1314-1316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work reports on the electrical properties of metal-oxide-semiconductor (MOS) capacitors made with a spin-on-glass (SOG) SiO2 layer, doped with 2% phosphorus, deposited on InP substrate by spin casting followed by a low-temperature (〈260 °C) anneal. The capacitance versus voltage behavior as well as the dielectric constant of the SOG layer was analyzed as a function of the frequency. The stability of the relevant parameters was checked after a long period of time (four weeks), compared with fresh devices, and revealed a significant increase in the dielectric constant and a slight increase in the leakage current. It is shown that the use of SOG as the dielectric material in the MOS structure leads to a relatively low fixed charge (less than 2×1011 cm−2) and low fast state concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104295
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  • 4
    Electronic Resource
    Electronic Resource
    Cd-H pairs in GaAs: Identification and stability (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1751-1753 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Cd-H complex in 111mCd-doped GaAs implanted with low-energy (150–400 eV) hydrogen atoms is identified and studied by perturbed angular correlation spectroscopy using radioactive 111mCd as a probe. By measuring the fraction of Cd-H pairs in an isochronal annealing experiment, the stability of the pairs is deduced yielding a dissociation energy of ED=1.35(10) eV. After 111mCd implantation but preceding the H loading, the GaAs samples have to be annealed at temperatures exceeding 900 K in order to form Cd-H pairs. These temperatures are in agreement with the temperature range required for electrical activation of Cd implants, suggesting that a Coulombic interaction is responsible for the formation of Cd-H pairs in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105079
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  • 5
    Electronic Resource
    Electronic Resource
    Large increase of refractive index and compactness in siloxane-type spin-on-glass induced by ion implantation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 108-110 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Drastic changes in index of refraction and volume shrinkage of spin-on-glass films induced by P+ implantation are reported. An increase in refraction index (n) as large as 20% (from 1.38 to 1.79) has been measured following 1.6×1016 cm −2 implantations. The changes in n are accompanied by a volume shrinkage of similar magnitude. However, at doses exceeding ≈1015 cm−2 the shrinkage saturates while the index of refraction continues to increase indicating that material changes other than simple densification must be responsible for the observed rise in refractive index.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103958
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  • 6
    Electronic Resource
    Electronic Resource
    Growth of InP epitaxial layers by rapid thermal low pressure metalorganic chemical vapor deposition, using tertiarybutylphosphine (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2958-2960 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality InP layers with low impurity backgrounds have been grown by means of the rapid thermal low pressure metalorganic chemical vapor deposition technique, using tertiarybutylphosphine as the phosphorus source. The films were grown at a P:In ratio of 75 or higher, temperatures between 500 and 525 °C, a pressure of 2 Torr and growth rates as high as 2 nm/s. The undoped films were defect-free with exhibited featureless morphologies, and minimum backscattering yields (Xmin) as low as 3.1%, measured by ion channeling. The electrical quality of the films (Nd=2.5×1016 cm−3, μ=4200 cm2/V s) was also excellent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110285
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  • 7
    Electronic Resource
    Electronic Resource
    W(Zn) selectively deposited and locally diffused ohmic contacts to p-InGaAs/InP formed by rapid thermal low pressure metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2652-2654 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-aligned, locally diffused W(Zn) contacts to InGaAs/InP structures were fabricated by means of rapid thermal low pressure metalorganic chemical vapor deposition (RT-LPMOCVD), using a reactive gas mixture that contained diethylzinc (DEZn), WF6, H2, and Ar. W(Zn) layers of about 30 nm thick were deposited at 500 °C for 20 s and at a total pressure of about 2 Torr, onto InGaAs and InP. Spontaneous formation of highly doped underlying InGaAs and InP layers about 150 nm thick with Zn concentration levels higher than 1×1018 cm−3 took place through the deposition of the W(Zn) layers. Post-deposition, in situ annealing at temperatures of 500 °C or lower enhanced the indiffusion of Zn into the underlying semiconductor and reduced the specific resistance of the W(Zn)/InGaAs contact to a minimum value of 5×10−6 Ω cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109275
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  • 8
    Electronic Resource
    Electronic Resource
    Study of the changes in the infrared transmission of SiO2 spin-on-glass due to ion implantation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2953-2955 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ion implantation of phosphorus into spin-on-glass (SOG) SiO2 thin-film films modified the infrared transmission spectrum of the films. Two SOG types, polysiloxane and silicate, were ion implanted with doses in the 1×1014–1×1015 cm−2 range and an energy of 40 keV. The Fourier-transform infrared spectrum of such films on silicon substrates was measured and the results are presented as a function of the implanted dose. The effect of the ion implantation on the silicate SOG was minute while significant changes were observed in the polysiloxane SOG. The major absorption peaks in the transmission spectrum were numerically analyzed and fitted to a set of Lorentzian functions. The peak heights, width, and area were measured. The ion implantation reduces the number of CH3 groups while the location of the Si-O absorption peak is shifted towards a shorter wavelength, i.e., a denser material. A physical interpretation of the absorption peak dependence on the ion-implanted dose is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105809
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  • 9
    Electronic Resource
    Electronic Resource
    Low-temperature rapid thermal low pressure metalorganic chemical vapor deposition of Zn-doped InP layers using tertiarybutylphosphine (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2546-2548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High purity Zn doped InP layers were grown by rapid thermal low pressure metalorganic chemical vapor deposition technique, using tertiarybutylphosphine as the phosphorus source. The best quality layer, which was grown at P:In ratio of 75, temperature as low as 525 °C, pressure of 2 Torr and growth rate of 2 nm/s, exhibited electron mobility of 80 cm2 V−1 s−1 and Hall carrier concentration of 3.5×1018 cm−3 at room temperature. The stoichiometry of the InP Zn-doped layer was excellent, regardless of the Zn content in the reactive gas mixture. The crystallographic defect density and the surface morphological particle concentration, however, were found to be strongly dependent on the Zn concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110428
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  • 10
    Electronic Resource
    Electronic Resource
    In situ fabricated Ga2O3–GaAs structures with low interface recombination velocity (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 625-627 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Ga2O3 films have been deposited in situ on (100) GaAs layers grown by molecular beam epitaxy in ultrahigh vacuum. The Ga2O3–GaAs interface is stable during photoexcitation and the photoluminescence (PL) intensity, measured at 514.5 nm excitation wavelength, is enhanced drastically by a factor of 420 as compared to a corresponding bare GaAs surface. The Ga2O3–GaAs interface recombination velocity derived from a modified dead layer model is below 104 cm/s. Furthermore, the PL intensity of Ga2O3–GaAs structures approaches that of a very low interface state density (2×109 eV−1 cm−2) AlGaAs–GaAs reference structure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114034
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