Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Chemistry  (38)
  • 27.90.+b  (4)
  • 11.30.er  (1)
  • 11
    Electronic Resource
    Electronic Resource
    86. Diffuse Emissionen an Rohrleitungsflanschen - Ein Verbundforschungsprojekt der chemischen Industrie (1999)
    Weinheim : Wiley-Blackwell
    Chemie Ingenieur Technik - CIT 71 (1999), S. 996-997 
    Details
    ISSN: 0009-286X
    Keywords: Chemistry ; Industrial Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/cite.330710990
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 12
    Electronic Resource
    Electronic Resource
    Quantitative depth profiling in surface analysis: A reviewInvited paper presented at the International Conference on Quantiative Surface Analysis, Teddington, UK, 16-17 october 1979. (1980)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 2 (1980), S. 148-160 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: After a brief survey of the various non-destructive and destructive methods used for obtaining in-depth composition profiles, the generally applicable method of ion sputtering in combination with a surface analysis technique is discussed in more detail. The quantitative evaluation of sputtering profiles requires the conversion of a measured signal intensity versus sputtering time into a true concentration versus distance from the original surface. Basically, this procedure comprises the quantification of the surface analysis method applied and the sputtering rate, both being dependent on sample composition. Furthermore, various phenomena limit the quantitative evaluation of depth profiles; the most important of which are ion and/or electron beam induced changes of surface composition and surface microtopography. Different factors such as information depth, ion beam inhomogeneity, original and beam induced roughness, knock-on and atomic mixing effects, preferential sputtering, enhanced atomic migration etc. are discussed with respect to their influence on depth resolution and its dependence on sputter depth. Model calculations and their comparison with experimental data reveal the influence of these factors. In conclusion, the basic requirements for the optimization of sputter profiling are stated.
    Additional Material: 19 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740020406
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 13
    Electronic Resource
    Electronic Resource
    Crater edge profling of Ni/Cr sandwich multilayer thin films by scanning Auger microscopy (sam) (1980)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 2 (1980), S. 183-186 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The principle of the technique of crater edge profiling is described as an alternative method to conventional sputter profiling. The predictions for the lateral composition profile assuming a Gaussian intensity distribution of the primary ion beam are tested for a multilayer sandwich structure of Ni/Cr layers of 11.5 nm single layer thicknesses after Ar+ ion sputtering through 20 layers and scanning Auger microscopy with a 10 µm diameter electron beam. Due to the small angle of 44.3″ of the slope of the crater formed by ion sputtering, a magnification factor (lateral variation/depth variation) of 5 × 103 is obtained.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740020506
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 14
    Electronic Resource
    Electronic Resource
    Low energy nitrogen implantation profiles in cobalt using AES (1980)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 2 (1980), S. 187-190 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Using AES in combination with argon depth profiling, low energy (0.5-5 keV) nitrogen implantation profiles were determined. The profiles show reasonable agreement to the Schulz-Wittmaack model of ion collection during sputtering when the effect of the finite escape depth of the Auger electrons is taken into account. The projected ranges of nitrogen in cobalt obtained when using this model shows reasonable correspondence with the LSS-calculated ones.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740020507
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 15
    Electronic Resource
    Electronic Resource
    Oxidation of NiCr and NiCrFe alloys at room temperaturePaper presented at ECASIA 87, Stuttgart, FRG, 19-23 October 1987. (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 11 (1988), S. 617-626 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The primary stages of the oxidation of NiCr23 and of NiCr21Fe12 and the final oxide layers were studied at room temperature and oxygen pressures between 10-6 Pa and 10-4 Pa using AES and XPS. The composition of the surface during oxygen exposure was monitored by continuous recording of the Auger transitions M23 VV and L3M23V of the metallic components and the KL23L23 transition of oxygen. The low energy M23VV transitions are especially indicative of the present chemical state which is additionally characterized by the 2p photoelectron spectra. After different oxygen exposures, the thickness of the oxide layers was determined by angle resolved AES, XPS results, and by sputter depth profiling which also gives the elemental in depth distribution. It is concluded that the initial preferential oxidation of Cr is followed by a surface enrichment and oxidation of the remaining elements with lower affinity to oxygen, i.e. Ni in NiCr and both Ni and Fe in NiCrFe.
    Additional Material: 14 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740111207
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 16
    Electronic Resource
    Electronic Resource
    Characterization of contamination layers by emission angle dependent XPS with a double-pass CMA (1984)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 6 (1984), S. 75-77 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The use of non destructive depth profiling by emission angle dependent XPS analysis is demonstrated for a thin contamination layer consisting of carbon, hydrogen and hydride-bonded oxygen on top of an anodic oxide of Nb2O5 on Nb. Using a double-pass CMA with an angle resolved aperture and measured intensity ratios of O 1s (hydroxide)/O 1s (oxide) and O 1s (hydroxide-/C 1s) as a function of the emission angle, the thickness (d = 3.3 nm) and composition are determined.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740060207
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 17
    Electronic Resource
    Electronic Resource
    Determination of the atomic mixing layer in sputter profiling of Ta/Si multilayers by TEM and AES (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 15 (1990), S. 794-796 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Sputter-deposited multilayers of Si and Ta with a nominal period length of a double layer (Ta + Si) of 20 nm were studied with AES depth profiling and with transmission electron microscopy (TEM). The asymmetric shape of the measured Si layer profiles was fitted to model calculations based on preferential sputtering of Si and an atomic mixing zone length of 4 nm for 3 keV Ar+ ions at a 36° incidence angle. TEM images of cross-sections of the original sample show sharp Si/Ta and Ta/Si interfaces, with a width of ∼ 0.5 nm. The atomic mixing zone length of the sputter-profiled sample was observed directly by TEM and was determined to be 4.0 nm, in accordance with the AES profile evaluation. It is concluded that the observed asymmetric broadening of the shape of the measured AES sputtering profiles is due mainly to atomic mixing and is enhanced by preferential sputtering of Si.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740151214
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 18
    Electronic Resource
    Electronic Resource
    Probing depth of soft x-ray absorption spectroscopy measured in total-electron-yield mode (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 18 (1992), S. 65-69 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Two series of experiments on well-characterized systems were performed to examine the probing depth of soft x-ray absorption spectroscopy (XAS) measured in total-electron-yield (TEY) mode. First we measured the Ni 2p3/2 absorption spectra of Ni(100) covered with Tb as a function of the overlayer thickness. Secondly we recorded the O 1s absorption spectra of Ta2O5 films produced by controlled anodic oxidatio of Ta foils as a function of the oxide thickness. The mean probing depth (MPD) was found to be much shorter than previously assumed (for O 1s, only 1.9 nm). The relative importance of those cascade mechanisms that lead to the electron current measured in TEY is discussed.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740180111
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 19
    Electronic Resource
    Electronic Resource
    Temperature dependence of the phosphorus segregation at the twin boundary in an Fe-4 at.% Si alloy (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 16 (1990), S. 546-551 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: AES of in situ fractured bicrystals of an Fe-4 at.% Si alloy containing traces of phosphorus was used to study the temperature dependence of the segregation at the symmetrical {112} (coherent twin) grain boundary between 773 and 1173 K. The observed enrichment of P decreases with temperature, whereas that of Si increases slightly. This behaviour is described by a mutual repulsive interaction coefficient α′ = 92 kJ mol-1 of P and Si and the corre-sponding pure binary segregation enthalpies ΔH0P = -7.9 kJ mol-1 and ΔH0Si = -3.0 kJ mol-1, the absolute values of which are considerably lower than those reported for polycrystalline samples of Fe—P and Fe—Si. The differences are explained on the basis of orientation, concentration and interaction effects.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.7401601113
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 20
    Electronic Resource
    Electronic Resource
    Interfacial reactions and silicide formation in Si/Ni/Si and Si/Cr/Si sandwich layersPaper presented at ECASIA 93, Catania, Sicily, 4-8 October 1993. (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 560-565 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The preparation of well-characterized silicide thin films for microelectronics needs a control of interfacial reactions and diffusion processes during heat treatment of metal/semiconductor systems. Two sandwich structures of Si(33 nm)/Me(50 nm)/Si(33 nm), where Me = Ni or Cr, with a total thickness of each structure of 116 nm were sputter deposited onto smooth silicon-(111) substrates. The reactions of both metals with amorphous silicon thin films were activated in a differential scanning calorimeter (DSC), at a heating rate of 40°C/min-1, between room temperature and different higher temperatures. Auguer electron spectroscopy depth profiles showed that the Si/Ni/Si sandwich structure reacted almost completely during heat treatment up to 320°C and formed reaction products with a composition close to Ni3Si2. Selected area diffraction patterns revealed that this is a mixture of Ni2Si and NiSi silicides. A much less pronounced reaction between Si and Cr was observed in the Si/Cr/Si sandwich structure, even with heating to 630°C, resulting in CrSi2 silicide and different Cr-Si solid solutions. The results of AES depth profiling studies of the thermally treated sandwich structures are discussed in terms of diffusion processes, movement of interfaces and formation of silicides. The additional information obtained with differential scanning calorimetry and transmission electron microscopy enables a detailed identification of reaction products formed in the early stage of the thermally treated Si/Me/Si structures.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740210808
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...