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  • 42.70  (2)
  • Optical properties of thin films surfaces and layer structures (superlattices, heterojunctions and multilayers)  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 57 (1993), S. 431-434 
    ISSN: 1432-0649
    Keywords: 42.70 ; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Nd:YAG and a Nd:YAG-pumped dye laser are used to generate tunable deep ultraviolet radiation down to 240 nm in a lithium triborate crystal (LBO) by noncollinear sum-frequency mixing. All longer wavelengths can be generated by a combination of harmonic generation of the dye laser and sum-frequency mixing, 240 nm being the near noncritical limit. A set of versatile Sellmeier dispersion equations is derived to satisfactorily predict phase-matching in LBO.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 63 (1996), S. 141-144 
    ISSN: 1432-0649
    Keywords: 42.65K ; 42.70 ; 42.60H
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A conversion efficiency as high as 22%from dye-laser radiation to the near infrared with difference-frequency mixing of Nd:YAG laser radiation and its second-harmonic-pumped dye laser in an only 5 mm long KTP crystal is reported for the generation of tunable near infrared radiation.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1367-1370 
    ISSN: 0392-6737
    Keywords: Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Optical properties of thin films surfaces and layer structures (superlattices, heterojunctions and multilayers) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Our interest is centred on the very thin layers consisting of only one or a few monolayers of InAs. The optical transition energies, measured by photoluminescence spectroscopy, are compared with theoretical calculations obtained in envelope function approximation and through an empirical tight-binding method. This comparison yields values for the not well-known valence band offset at the InAs/InP interface, and the luminescence lines observed at different energies could be assigned to layers between one and 13 monolayers thick.
    Type of Medium: Electronic Resource
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