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  • 1
    Electronic Resource
    Electronic Resource
    High current O+ ion source : Proceedings of fifth international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1325-1326 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high current O+ ion source is desirable for applications to SIMOX and materials modification. To meet the requirements of this field, a new type of nonfilament high current O+ ion source has been developed successfully in our institute. Using O2 as discharge material, the typical extraction characteristics are as follows: The total oxygen ions current is 100 mA, of which the content of O+ is 80%, beam current density is larger than 200 mA/cm2 when the power consumption is 100 W; therefore the economic property is 1 mA/W. Feeding N2, the total extraction beam current is 100 mA of which 70% is N+ while the power consumption is 135 W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144999
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  • 2
    Electronic Resource
    Electronic Resource
    Control of diamond film microstructure by Ar additions to CH4/H2 microwave plasmas (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1981-1989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transition from microcrystalline to nanocrystalline diamond films grown from Ar/H2/CH4 microwave plasmas has been investigated. Both the cross-section and plan-view micrographs of scanning electron microscopy reveal that the surface morphology, the grain size, and the growth mechanism of the diamond films depend strongly on the ratio of Ar to H2 in the reactant gases. Microcrystalline grain size and columnar growth have been observed from films produced from Ar/H2/CH4 microwave discharges with low concentrations of Ar in the reactant gases. By contrast, the films grown from Ar/H2/CH4 microwave plasmas with a high concentration of Ar in the reactant gases consist of phase pure nanocrystalline diamond, which has been characterized by transmission electron microscopy, selected area electron diffraction, and electron energy loss spectroscopy. X-ray diffraction and Raman spectroscopy reveal that the width of the diffraction peaks and the Raman bands of the as-grown films depends on the ratio of Ar to H2 in the plasmas and are attributed to the transition from micron to nanometer size crystallites. It has been demonstrated that the microstructure of diamond films deposited from Ar/H2/CH4 plasmas can be controlled by varying the ratio of Ar to H2 in the reactant gas. The transition becomes pronounced at an Ar/H2 volume ratio of 4, and the microcrystalline diamond films are totally transformed to nanocrystalline diamond at an Ar/H2 volume ratio of 9. The transition in microstructure is presumably due to a change in growth mechanism from CH3⋅ in high hydrogen content to C2 as a growth species in low hydrogen content plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368331
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  • 3
    Electronic Resource
    Electronic Resource
    Low voltage electron emission from calcium carbonate whiskers coated with a thin layer of gold (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4051-4054 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cold cathode electron field emission from aragonite CaCO3 whiskers coated with 10-nm-thick gold has been observed. The microstructure of the whiskers grown on a Ni substrate by electrochemical deposition has been examined by scanning electron microscope, energy dispersive x-ray spectrometer, x-ray diffraction spectrometer, and Raman spectroscopy. For a 220 μm anode-cathode gap, emission current densities in excess of ∼2×10−6 A/cm2 are observed for applied voltages of 660 V or greater. Although it is believed that the electric field is locally enhanced by the geometry of the whiskers, the voltage required increases roughly linearly with the anode-cathode spacing, corresponding to a turn-on field of approximately 3 V/μm, and an emission current density of 0.4 mA/cm2 has been obtained for an applied field of 5.5 V/μm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365714
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  • 4
    Electronic Resource
    Electronic Resource
    Synthesis of nanocrystalline diamond thin films from an Ar–CH4 microwave plasma (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 540-543 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline diamond thin films have been synthesized in an Ar–CH4 microwave discharge, without the addition of molecular hydrogen. X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy characterizations show that the films consist of a pure crystalline diamond phase with very small grain sizes ranging from 3 to 20 nm. Atomic force microscopy analysis demonstrates that the surfaces of the nanocrystalline diamond films remain smooth independent of the film thicknesses. Furthermore, the reactant gas pressure, which strongly affects the concentration of C2 dimer in the Ar–CH4 plasma as well as the growth rate of the films, has been found to be a key parameter for the nanocrystalline diamond thin film depositions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366668
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  • 5
    Electronic Resource
    Electronic Resource
    Synthesis and electron field emission of nanocrystalline diamond thin films grown from N2/CH4 microwave plasmas (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4546-4550 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline diamond films have been synthesized by microwave plasma enhanced chemical vapor deposition using N2/CH4 as the reactant gas without additional H2. The nanocrystalline diamond phase has been identified by x-ray diffraction and transmission electron microscopy analyses. High resolution secondary ion mass spectroscopy has been employed to measure incorporated nitrogen concentrations up to 8×1020 atoms/cm3. Electron field emission measurements give an onset field as low as 3.2 V/μm. The effect of the incorporated nitrogen on the field emission characteristics of the nanocrystalline films is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366190
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  • 6
    Electronic Resource
    Electronic Resource
    Technique to suppress dislocation formation during high-dose oxygen implantation of Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1892-1894 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage accumulation during high-dose oxygen implantation of Si to form a silicon-on-insulator material can deleteriously affect the quality of the material. In particular, dislocations formed in the superficial silicon layer are difficult to anneal, requiring temperatures near the melting point of Si to reduce their density to acceptable levels. A technique to suppress the formation of these dislocations during irradiation is presented. The success of this technique lies in its ability to interact with vacancy-type defects within the superficial layer whose accumulation precedes dislocation formation. A Si+ self-ion beam is used as a spatially specific tool to introduce Si atoms into the vicinity of these precursor defects prior to the onset of dislocation growth. The interaction of this beam with the precursor defects is shown to be effective in suppressing dislocation formation during subsequent O+ implantation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113312
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  • 7
    Electronic Resource
    Electronic Resource
    Damage accumulation during high-dose, O+ implantation in Si (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 896-898 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-dose O+ implantation of Si between 450 and 500 keV is investigated to better understand the mechanisms responsible for ion-induced growth of damage, especially in the top Si layer ahead of the region where a buried oxide forms. Two distinct states are identified in this Si layer over an extended range of fluence (≥1018 cm−2): a low-density defect state and a high-density one. These states are observed at all irradiation temperatures, including ambient temperature. The transition between the states is rather abrupt with the onset at a high fluence, which decreases with decreasing temperature. The existence of the low-density state offers a possibility of forming dislocation-free silicon-on-insulator wafers, even for ambient temperature irradiations. A processing method for achieving such wafers is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109894
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  • 8
    Electronic Resource
    Electronic Resource
    Strain relief mechanism for damage growth during high-dose, O+ implantation of Si (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3580-3582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-induced damage accumulation and growth during separation by implantation of oxygen (SIMOX) processing were studied. Silicon wafers were implanted with 450 keV oxygen ions at an elevated temperature with doses of 0.8×1018 and 1.1×1018 cm−2. At the lower dose, the silicon overlayer was found to be highly strained but free of dislocations, while a distinct band of dislocations was observed in the top Si layer at the higher dose. The occurrence of this band is shown to correlate with strain relief in the overlayer. Rutherford backscattering spectrometry, cross-section transmission electron microscopy, and x-ray diffraction were used to characterize this damage so that its role in releasing the accumulated strain during ion implantation could be better understood. Additional insight was gained into the nature of the damage formed at the different doses by studying the thermal stability at 900 °C. Markedly different thermal behaviors were observed and are correlated to changes in the strain state of each sample. These results strongly suggest that dislocation formation in the Si overlayer during the SIMOX process is in response to strain accumulation in the lattice and that dislocation-free layers can be formed by appropriate intervention prior to the yield point. This mechanism for dislocation formation is thought to be generally operative under extreme irradiation conditions and, therefore, will be important to other ion-beam synthesis processes such as buried silicide formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110103
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  • 9
    Electronic Resource
    Electronic Resource
    Growing carbon nanotubes by microwave plasma-enhanced chemical vapor deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3437-3439 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A processing route has been developed to grow bundles of carbon nanotubes on substrates from methane and hydrogen mixtures by microwave plasma-enhanced chemical vapor deposition, catalyzed by iron particles reduced from ferric nitrate. Growth takes place at about 900 °C leading to nanotubes with lengths of more than 20 μm and diameters on the nanometer scale. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121658
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  • 10
    Electronic Resource
    Electronic Resource
    Langmuir-Blodgett Film and Second Harmonic Generation of a Europium Hemicyanine Complex, Me2NC6H4CH:CHC5H4NC16H33+Eu(NTA)4- (1994)
    s.l. : American Chemical Society
    Langmuir 10 (1994), S. 1910-1912 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00018a049
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