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  • ECR  (2)
  • interhalogens  (2)
  • discharges in BCl3  (1)
  • 1
    Digitale Medien
    Digitale Medien
    Dry etching characteristics of III–V semiconductors in microwave BCl3 discharges (1993)
    Springer
    Plasma chemistry and plasma processing 13 (1993), S. 311-332 
    Details
    ISSN: 1572-8986
    Schlagwort(e): Plasma etching ; electron cyclotron resonance ; discharges in BCl3 ; additional RF biasing ; selectivities
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein
    Notizen: Abstract Electron cyclotron resonance (ECR) BCl3 discharges with additional rf biasing of the sample position have been used to etch a variety of III–V semiconductors. GaAs and AlxGa1−xAs (x = 0−1) etch at equal rates in BCl3 or BCl3/Ar discharges, whereas SF6 addition produces high selectivities for etching GaAs over AlGaAs. These selectivities are in excess of 600 for dc biases of ≤−150 V, and fall to ≤6 for biases of −300 V. If the dc biases are kept to ≤ − 100 V, there is no measurable degradation of the optical properties of the GaAs and AlGaAs. The AlF3 formed on the AlGaAs surface during exposure to BCl3/SF6 plasmas can be removed by sequential rinsing in dilute NH4OH and water. In-based materials (InP, InAs, InSb, InGaAs) etch at slow rates with relatively rough morphologies in BCl3 plasmas.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01466047
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  • 2
    Digitale Medien
    Digitale Medien
    Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part I: GaAs, GaSb, and AlGaAs (2000)
    Springer
    Plasma chemistry and plasma processing 20 (2000), S. 405-415 
    Details
    ISSN: 1572-8986
    Schlagwort(e): ICP ; compound semiconductors ; interhalogens
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein
    Notizen: Abstract High-density plasma etching of GaAs, GaSb, and AlGaAs was performed inICl/Ar and IBr/Ar chemistries using an Inductively Coupled Plasma (ICP)source. GaSb and AlGaAs showed maxima in their etch rates for both plamachemistries as a function of interhalogen percentage, while GaAs showedincreased etch rates with plasma composition in both chemistries. Etchrates of all materials increased substantially with increasing rf chuckpower, but rapidly decreased with chamber pressure. Selectivities 〉10 forGaAs and GaSb over AlGaAs were obtained in both chemistries. The etchedsurfaces of GaAs showed smooth morphology, which were somewhat better withICl/Ar than with IBr/Ar discharge. Auger Electron Spectroscopy analysisrevealed equirate of removal of group III and V components or thecorresponding etch products, maintaining the stoichiometry of the etchedsurface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1007000613045
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  • 3
    Digitale Medien
    Digitale Medien
    Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part II: InP, InSb, InGaP, and InGaAs (2000)
    Springer
    Plasma chemistry and plasma processing 20 (2000), S. 417-427 
    Details
    ISSN: 1572-8986
    Schlagwort(e): ICP ; compound semiconductors ; interhalogens
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein
    Notizen: Abstract A parametric study of Inductively Coupled Plasma (ICP) etching of InP, InSb, InGaP, and InGaAs has been carried out in ICl/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 for InP, 3.6 for InSb, 2.3 for InGaP, and 2.2 μm/min for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: The etch rates increased substantially with increasing ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than ICl/Ar, but the etched surface morphologies were fairly poor for both chemistries.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1007052629883
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  • 4
    Digitale Medien
    Digitale Medien
    Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part I: GaAs and related compounds (1991)
    Springer
    Plasma chemistry and plasma processing 11 (1991), S. 405-422 
    Details
    ISSN: 1572-8986
    Schlagwort(e): III–V semiconductors ; ECR ; dry etching
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein
    Notizen: Abstract A systematic study has been performed of the dry etching characteristics of GaAs, Al0.3Ga0.7As, and GaSb in chlorine-based electron cyclotron resonance (ECR) discharges. The gas mixtures investigated were CCl2F2/O2, CHCl2F/O2, and PCl3. The etching rates of all three materials increase rapidly with applied RF power, while the addition of the microwave power at moderate levels (150 W) increases the etch rates by 20–80%. In the microwave discharges, the etch rates decrease with increasing pressure, but at 1 m Torr it is possible to obtain usable rates for self-bias voltages ≤ 100 V. Of the Freon-based mixtures, CHCl2F provides the least degradation of optical (photoluminescence) and electrical (diode ideality factors and Schottky barrier heights) properties of GaAs as a result of dry etching. Smooth surface morphologies are obtained on all three materials provided the microwave power is limited to ≤ 200 W. Above this power, there is surface roughening evident with all of the gas mixtures investigated.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01447156
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  • 5
    Digitale Medien
    Digitale Medien
    Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part II: InP and related compounds (1991)
    Springer
    Plasma chemistry and plasma processing 11 (1991), S. 423-438 
    Details
    ISSN: 1572-8986
    Schlagwort(e): III–V semiconductors ; ECR ; dry etching
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein
    Notizen: Abstract Electron Cyclotron Resonance (ECR) discharges of CCl2F2 or PCl3 have been used to etch InP, InAs, InSb, InGaAs and AlInAs. The etch rates of these materials increase linearly with additional RF power level applied to the cathode and are in the range 50–180 Å · min−1 for 50 W (DC bias ∼ 308 V), 10 mTorr, 38 CCl2F2/2 O2 plasmas. The etch rates fall rapidly with increasing pressure or increasing O2-to-CCl2F2 ratio. Polymeric surface residues up to 40 Å thick are found on all of these semiconductors when using Freon-based gas mixtures. Etching at practical rates is possible with only 100 V self-bias when using PCl3 discharges, and the addition of microwave excitation under these conditions enhances the etch rates by factors of 2–9. At higher self-biases (300 V) etch rates of 3500–8000 Å · min−1 are possible with PCl3 although the surface morphologies are significantly rougher and the etching less anisotropic than with CCl2F2-based mixtures.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01447157
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