Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 948-950
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thin films of RhGa were grown on GaAs(001) in a molecular beam epitaxy system, by codeposition of rhodium and gallium from separated sources. The RhGa/GaAs contact is stable at least up to 550 °C and the film resistivity is low enough ( ρ(approximately-equal-to)36 μΩ cm) to allow applications in microelectronics. In spite of high linear misfits, the as-deposited RhGa films exhibit the two following epitaxial arrangements related by a 90° rotation: [100](011)RhGa//[110](001)GaAs and [100](011)RhGa//[11¯0](001)GaAs. After annealing at 550 °C, only one arrangement is observed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99237
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