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1

Digitale Medien

A study of interlayer coupling in Co/Cu multilayers (1995)

Jin, Q. Y. ; Zhai, H. R. ; Xu, Y. B. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 3971-3974

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Co(22 A(ring))/Cu multilayers with Cu thicknesses varying from 6 to 40 A(ring) are studied by vibrating-sample magnetometry and ferromagnetic-resonance spectroscopy (FMR). The magnetization was found to increase with decreasing Cu thickness, whereas the linewidth of the uniform mode of the FMR was found to decrease. This is attributed to the spin polarization of the Cu layers due to interlayer coupling and its effect on the lowered dimensionality of the Co layers. We also observed a peak on the high-field side of the uniform FMR mode, which we attribute to antiparallel coupling of adjacent ferromagnetic layers producing an "optical'' mode. © 1995 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.359561

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2

Digitale Medien

Interlayer coupling and spin polarization of the nonmagnetic layers in Fe/Cu and Fe/Ag CMFs : 38th Annual Conference on Magnetism and Magnetic Materials (1994)

Xu, Y. B. ; Lu, M. ; Jin, Q. Y. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 75 (1994), S. 6190-6192

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Compositionally modulated films (CMFs) of Fe/Cu and Fe/Ag, made by RF sputtering, were investigated with ferromagnetic resonance (FMR), nuclear magnetic resonance (NMR), and magneto-optical (MO) spectroscopy. Evidence of spin polarization of the nonmagnetic layers, related to the interlayer coupling, was obtained. Direct evidence of the penetration of an exchange field and the spin polarization of the conduction electrons in the nonmagnetic Cu layers was obtained in Fe/Cu CMFs by NMR. Spin-wave resonances were observed in Fe/Cu CMFs in FMR experiments, and the spin wave was found to be sustained by both the Fe and Cu sublayers. The MO spectra of Fe/Ag CMFs indicated that the conduction electrons of Ag are spin polarized and give an additional MO activity.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.355452

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3

Digitale Medien

Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures (invited) (2001)

Bland, J. A. C. ; Hirohata, A. ; Guertler, C. M. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 6740-6744

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Two major problems in spin electronics remain to be solved: room temperature spin injection at a source and spin detection at a drain electrode. The lateral size of magnetic contacts and the presence of a potential barrier at the interface are believed to have a key influence on the efficiency of both of these processes. We therefore aimed to clarify these issues by studying spin-polarized transport across epitaxially grown single crystal Fe (001)/GaAs nanoclusters and at the Schottky barrier formed at Ni80Fe20/GaAs interfaces. We observed a negative contribution to the magnetoresistance of an ultrathin (2.5 ML) discontinuous epitaxial Fe film as occurs in tunnel magnetoresistance. This result suggests that spin transport via GaAs is possible on the nanoscale. In the continuous NiFe/GaAs structures, circularly polarized light was used to create a population of spin-polarized electrons in the GaAs substrate and spin-polarized electron transport across the interface at room temperature was detected as an electrical response associated with the field-dependent photocurrent. Surprisingly, highly efficient spin transmission is observed at room temperature, indicating that there is no significant loss of spin polarization for electrons crossing the interface. This result unambiguously demonstrates that spin detection is possible at room temperature in a continuous ferromagnet/semiconductor contact in the presence of the Schottky barrier. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1361045

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4

Digitale Medien

Spin-dependent electron transport in NiFe/GaAs Schottky barrier structures (2000)

Hirohata, A. ; Xu, Y. B. ; Guertler, C. M. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 87 (2000), S. 4670-4672

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Photoexcitation at the Schottky barrier formed between 5 nm thick Ni80Fe20 films and both n+- and p−-type GaAs(100) substrates with doping density in the range 1023≤n(p)≤1025 m−3 was investigated using circularly polarized laser light. A helicity-dependent photocurrent dependent upon the magnetization configuration of the film and the Schottky barrier height was detected. The results provide evidence of spin-dependent electron transport through the NiFe/GaAs interface and show that the Schottky barrier height controls the spin-dependent current passing from the semiconductor to the ferromagnet. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.373125

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5

Digitale Medien

Domain wall trapping in controlled submicron ferromagnetic elements (2000)

Hirohata, A. ; Xu, Y. B. ; Yao, C. C. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 87 (2000), S. 4727-4729

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The domain configuration in permalloy wires (30 nm thick, 10 μm wide, and 205 μm long) with a wide size range of a narrow central bridge (5 μm long and w μm wide; 0.5≤w≤10 μm) were investigated in both their demagnetized and remanent states using magnetic force microscopy and the results were confirmed by micromagnetic calculations. At the bridge region, domain walls were found to be shifted by a small external field. Scanning magneto-optical Kerr effect revealed that the coercivity in these structures are the same as that in a straight wire, suggesting that domain wall movement is the dominant process in the magnetization reversal of these structures. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.373140

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6

Digitale Medien

Element specific spin-resolved densities of states in amorphous Fe75B25 probed with a synchrotron radiation source (2000)

Xu, Y. B. ; Greig, D.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 87 (2000), S. 7136-7138

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The partial spin-dependent densities of states (DOS) of both the iron and the boron in Fe–B amorphous magnetic alloys have been determined from spin-resolved photoemission using a synchrotron radiation source. The spin-integrated energy distribution curves (EDCs), polarization spectra and the spin-resolved EDCs show distinct differences between 15 and 40 eV photon energies due to strikingly different photon energy dependencies of the cross sections of Fe-d and B-p states. The B-p states were found to hybridize with Fe-d states and occupy a binding energy range of about 1–5.5 eV with a negative polarization; i.e., the B moment is "antiferromagetically" coupled with that of the Fe-d moment. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.372955

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7

Digitale Medien

Ferromagnetic metal/semiconductor hybrid structures for magnetoelectronics (1999)

Xu, Y. B. ; Freeland, D. J. ; Kernohan, E. T. M. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 5369-5371

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We report on the following new ferromagnetic metal/semiconductor heterostructure material systems: (1) Fe/InAs(100)-4×2, (2) Fe/InAs(graded)/GaAs(100), and (3) Fe/InAs/AlSb/GaSb/AlSb/InAs/GaAs resonant tunneling diodes. Single crystal Fe films have been stabilized in these structures using molecular beam epitaxy growth, as evidenced by low energy electron diffraction. The magnetic and electrical properties have been studied using in situ (and focused) magneto-optical Kerr effect, alternating gradient field magnetometry, and current–voltage measurements. The results show that Fe/InAs based heterostructures are very promising systems for use in future magnetoelectronic devices as they have well defined magnetic properties as well as favorable electrical properties. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.369980

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8

Digitale Medien

Real time dynamics in epitaxial Fe(100) disks (2001)

Gardiner, S. ; Rothman, J. ; Xu, Y. B. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 6790-6792

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Real time resolved scanning Kerr microscopy has been used to study the switching dynamics of 50 μm diameter epitaxial Fe(100) disks. The measurements were performed using a sinusoidal sweeping field with a sweep rate of dH/dt=10 kOe/s. By performing repetitive one-shot measurements, we have mapped the statistical fluctuations and the probability distribution of characteristic switching parameters as the switching instant t0, and the switching speed, V. We observe a substantial difference in the parameters estimated from the average of several measurements compared to the parameters extracted from the probability distributions. This illustrates the potential risks of using averaging techniques in dynamic measurements, in addition to the loss of the statistical information. The disks were found to display an inhomogeneous switching, which is believed to be caused by defect damped motion of the domain walls and a inhomogeneous distribution of defects. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1357144

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9

Digitale Medien

Suppression of 90° spin switching in Co nanomagnets grown on the Cu(110)-{2×1}O surface (2001)

Tselepi, M. ; Bode, P. J. ; Xu, Y. B. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 6683-6685

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We report on the effect of oxygen on the CO-induced 90° spin switching in the Co/Cu(110) system [Hope et al., Phys. Rev. B 57, 7454 (1998)]. The epitaxial fcc Co films were grown on the unsaturated Cu(110)-{2×1}O surface and their magnetic properties have been studied with in situ magneto-optic Kerr effect. The easy axis switch of the Co(110) films is suppressed when Co is grown on O exposed Cu surfaces. Scanning tunneling microscopy images of the film surface reveals the growth of elongated nanostructures preferentially oriented along the [001] direction, providing step-like edges for gas adsorption. The density of steps is similar to the density developing during growth on the clean Cu(110) surface but the step edges now run in the perpendicular direction. The suppression of the easy axis switch can be attributed to subtle changes of the number and adsorption probability of the available atop adsorption sites along the step edges for CO chemisorption. Our experiments highlight the remarkable chemical sensitivity and adsorption site dependence of the easy axis switch of the Co(110) nanomagnets. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1360259

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10

Digitale Medien

Giant enhancement of orbital moments and perpendicular anisotropy in epitaxial Fe/GaAs(100) (2001)

Xu, Y. B. ; Tselepi, M. ; Guertler, C. M. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 7156-7158

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The spin and orbital magnetic moments and the perpendicular magnetic anisotropy of 8 and 33 monolayer epitaxial bcc Fe films grown on GaAs(100)-4×6 have been measured using x-ray magnetic circular dichronism and polar magneto-optical Kerr effect. Both the films have approximately the same spin moments of about 2.0μB close to that of the bulk value. The ultrathin film shows a giant orbital moment enhancement of about 300% with respect to the bulk value and a perpendicular interface anisotropy field HsFe–GaAs of the order of −5×104 Oe. This may be partially due to an increased degree of localization of electronic states at the Fe/GaAs interface associated with the atomic scale interface structure. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1359473

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