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  • 11
    Electronic Resource
    Electronic Resource
    High moment soft magnetic FeTiN thin films for recording head materials (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3745-3748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Soft magnetic properties and thermal stability of Fe–Ti–N alloys films have been investigated. Thin films with composition in the range of 8–10 at. % Ti, 10.5–14 at. % N, and balance Fe were prepared by reactive sputtering method. The films exhibit good soft magnetic properties in the as-deposited condition without any post heat treatment, e.g., low coercivity Hc∼1.5 Oe, high permeability μ∼3200 at 1 MHz and very high saturation magnetization 4πMs∼24 kG. The thermal stability of these films was also found to be good, e.g., Hc was less than 2 Oe, and 4πMs was higher than 23 kG for the films annealed up to 500 °C. The high electrical resistivity ρ∼100 μ Ω cm of the films can minimize the eddy current loss in the high frequency applications. The combination of high 4πMs and relatively high anisotropy field Ha∼10 Oe in the film is conductive to the suppression of the undesirable ferromagnetic resonance interfere up to the GHz frequency range. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369742
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  • 12
    Electronic Resource
    Electronic Resource
    Mechanical properties of a new class of metallic glasses based on aluminum (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6863-6865 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanical properties (i.e., tensile fracture strength and Young's modulus) of eight different alloys of a new class of metallic glasses containing up to 90 at. % aluminum are reported along with crystallization temperatures of these alloys. The Al90Fe5Ce5 material has a tensile fracture strength of 940 MPa (1 MPa=145 psi), while two others (Al87Fe8.7Gd4.3 and Al87Ni8.7Y4.3) exceed 800 MPa. Young's modulus measurements for three of these exceed 60 GPa with a high value of 66 GPa for the Al90Fe5Ce5 glass. These unusually high strengths of the aluminum glasses can be of significant importance in obtaining high-strength, low-density materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341978
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  • 13
    Electronic Resource
    Electronic Resource
    Semi-insulating nature of gas source molecular beam epitaxial InGaP grown at very low temperatures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1231-1233 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InxGa1−xP lattice matched to GaAs (x(approximately-equal-to)0.51) has proven to be useful in many device applications. Here we show that undoped, semi-insulating InGaP is possible by growing with gas source molecular beam epitaxy at very low temperatures, 150–250 °C. The material grown at about 200 °C is n-type with a 296-K resistivity of 9×105 Ω cm, a mobility of 120 cm2/V s, and a donor activity energy of 0.48 eV. When annealed at 600 °C for 1 h, the resistivity increases to greater than 109 Ω cm and the resistivity activation energy to 0.8 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109781
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  • 14
    Electronic Resource
    Electronic Resource
    Determination of excess phosphorus in low-temperature GaP grown by gas source molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1671-1673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaP films, epitaxially grown at a low temperature (LT) of ∼200 °C by gas source molecular beam epitaxy, were reported recently to have excess phosphorus. In this letter, we report on the quantitative determination of the excess phosphorus in the LT films, using various approaches. Analytical scanning transmission electron microscopy, double-crystal x-ray diffraction, and particle-induced x-ray emission showed that the LT GaP films incorporated excess phosphorus of ∼0.6–2 at. %. The amount of excess phosphorus estimated from Raman scattering measurements, using the LO-TO phonon frequency splitting data of the as-grown LT GaP and bulk GaP, was in general agreement with those obtained from other techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112881
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  • 15
    Electronic Resource
    Electronic Resource
    Low-temperature growth of high resistivity GaP by gas-source molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1646-1648 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaP films were epitaxially grown on GaP substrates at a low temperature ∼200 °C using gas source molecular beam epitaxy (MBE). The lattice constant of these LT GaP films was found to be larger than that of both the GaP substrate and films grown at high temperatures. These results can be explained by excess phosphorus present in these LT films. The resistivity of these films is comparable to that of the semi-insulating (SI) GaP substrate. These results are considered the first demonstration of high resistivity, semi-insulating LT GaP films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108439
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  • 16
    Electronic Resource
    Electronic Resource
    High misfit epitaxial growth: Superconducting YBa2Cu3O7−x thin films on (100)BaF2 substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1509-1511 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ epitaxial growth of YBa2Cu3O7−x superconducting thin films on (100)BaF2 substrates has been successful by an off-axis dc planar magnetron sputtering method. The zero-resistance temperatures of these thin films are about 81–84 K with transition width of 1.5 K. The characteristics of the films were examined by x-ray diffraction, reflection high energy electron diffraction, Rutherford backscattering spectroscopy ion channeling techniques, and scanning electron microscopy. The experimental results suggest that BaF2 is a promising material as substrates or buffer layers for the epitaxial growth of high Tc superconducting thin films, especially in high frequency applications. Discussions on the heteroepitaxy of the YBCO/BaF2 system are propounded.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106295
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  • 17
    Electronic Resource
    Electronic Resource
    Growth morphology and characteristic structure in nanocrystalline Si film of high conductivity (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 968-970 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of hydrogenated nanocrystalline Si film with high electronic conductivity is investigated by means of transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Nearly parallel columnar structures with growth orientation along the [110] zone axis of Si are found from cross-sectional TEM images of the film. HRTEM observation reveals that these columns are composed of nanocrystallites (3–6 nm size) and dendritelike growth morphology, while in the region between columns the texture consists of smaller sized (〈3 nm) grains embedded in a hydrogenated amorphous Si. The volume fraction of the crystalline component is about 58% measured by Raman spectroscopy. The conductivity of the film is very high, about 10−1 (Ω cm)−1. It is considered that this is directly related to the characteristic structure of the film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113613
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  • 18
    Electronic Resource
    Electronic Resource
    High performance organic polymer light-emitting heterostructure devices (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2265-2267 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a high performance electroluminescence device based on bi-layer conjugated polymer structures consisting of a hole transporting (amine-fluorene) and an emissive (benzothiadiazole-fluorene) polymer layers prepared by the spin-coating technique on the glass substrate. Devices showed green emission with an electroluminescence peak located at around 545 nm and a full width at half maximum of about 80 nm. Our devices have also shown a high brightness (∼10 000 cd/m2 at 0.84 mA/mm2), good emission efficiency (∼14.5 cd/A) and luminous efficiency (2.26 lm/W), a large external quantum efficiency (3.8%), and a reasonable forward-to-reverse bias current rectification ratio (〉103 at ±25 V). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123862
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  • 19
    Electronic Resource
    Electronic Resource
    Bulk glass formation in the Pd–Ni–P system (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1861-1863 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk amorphous Pd–Ni–P rods with diameters ranging from 10 to 25 mm were prepared by a fluxing technique over a wide composition range. For most bulk glassy alloys studied, the difference between the glass transition temperature and the crystallization temperature, Tx−Tg, is larger than 90 K. Of all the alloy compositions examined, Pd40Ni40P20 has the highest glass formability, and 300-g bulk amorphous cylinders, 25 mm in diameter and 50 mm in length, were easily and repeatedly formed. This size, however, is not an upper limit. The elastic properties of these bulk amorphous alloys were determined by a resonant ultrasound spectroscopy technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117458
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  • 20
    Electronic Resource
    Electronic Resource
    Conduction mechanism under quasibreakdown of ultrathin gate oxide (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2432-2434 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conduction mechanism under quasibreakdown of ultrathin gate oxide has been studied systematically in both n and p metal–oxide–semiconductor field effect transistors (MOSFETs) with a 3.7 nm gate oxide. The carrier separation experiment is conducted to investigate the evolutions of gate, source/drain, and substrate currents before and after quasibreakdown. It is shown that after quasibreakdown, the substrate current and the source-drain current versus the gate voltage curves are surprisingly analogous to those curves observed in fresh MOSFET with a gate oxide of direct tunneling thickness. This strongly supports the quasibreakdown model based on the local physically damaged region by which the effective oxide thickness is reduced. When direct tunnelings of conduction band electrons, valence band electrons and holes through the effectively thinned gate oxide are taken into account, the major experimental observations in the quasibreakdown can be explained in a unified way. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125038
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