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  • 11
    Electronic Resource
    Electronic Resource
    Defect structures at the GaAs/Si interface after annealing (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 130-132 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution electron microscopy was applied to investigate the effect of post-annealing on the defect structure at the GaAs/Si interface. This study indicates that annealing results in dislocation rearrangement at the interface to form the majority of Lomer's dislocations with their Burgers vectors parallel to the interface. Dislocations with inclined Burgers vectors (type 2) at the interface after annealing are often observed at steps introduced by the substrate surface roughness. This observation is discussed in terms of the shrinking of stacking faults and microtwins and the preferential nucleation of both stacking faults (or microtwins) and type 2 dislocations at surface steps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98591
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  • 12
    Electronic Resource
    Electronic Resource
    Observation of proposed flux pinning sites in neutron-irradiated YBa2Cu3O7−x (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2150-2152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructure and magnetic hysteresis have been compared for two samples of the YBa2Cu3O7−δ (δ∼0) high-temperature superconductor, one unirradiated, and one irradiated with fast neutrons (E(approximately-greater-than)0.1 MeV) to a fluence of 3×1018 n/cm2. Notable changes in the microstructure include strain-induced contrast from regions 2–7 nm in size. An intrinsic critical current density (Jc) of 4.6×106 A/cm2 in zero field at 4 K has been determined from magnetic hysteresis measurements for the irradiated sample while 1.2×106 A/cm2 is noted for the unirradiated sample. We propose that the observed defect structure in the irradiated material is responsible for increased pinning and consequently higher Jc's.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104159
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  • 13
    Electronic Resource
    Electronic Resource
    Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films (less than 1000 nm) of heteroepitaxial GaAs on Si were grown by organometallic vapor phase epitaxy with the intent of comparing the initial stages of growth with the authors' previous experience in examining films grown by molecular beam epitaxy (MBE). The films were found to be epitaxial after 10 nm of growth at 425 °C, and to uniformly cover the substrate completely, unlike the asymmetrical island nature of MBE films grown under comparable conditions. The relaxation of strain was found to be quite similar to the MBE case.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100033
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  • 14
    Electronic Resource
    Electronic Resource
    Passivation of acceptors in InP resulting from CH4/H2 reactive ion etching (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 56-58 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching of InP with CH4/H2 mixtures leads to hydrogen passivation of near-surface Zn acceptors but not S donors. Secondary-ion mass spectrometry (SIMS) measurements of CH4/D2 etched samples show deuterium diffuses to a depth of 2000 A(ring) in p-InP (1.5×1018 cm−3) when etching at a rate of 520 A(ring)/min and a temperature of about 80 °C. Acceptor passivation occurs to the same depth. For n-InP, no donor passivation is observed, even though SIMS shows deuterium diffusion to a depth of 7000 A(ring). Annealing at 350 °C for 1 min restores carrier concentrations to near pre-etched levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101752
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  • 15
    Electronic Resource
    Electronic Resource
    Pt/Ti/p-In0.53Ga0.47As low-resistance nonalloyed ohmic contact formed by rapid thermal processing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2306-2308 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very low resistance nonalloyed ohmic contacts of Pt/Ti to 1.5×1019 cm−3 Zn-doped In0.53Ga0.47As have been formed by rapid thermal processing. These contacts were ohmic as deposited with a specific contact resistance value of 3.0×10−4 Ω cm2. Cross-sectional transmission electron microscopy showed a very limited interfacial reacted layer (20 nm thick) between the Ti and the InGaAs as a result of heating at 450 °C for 30 s. The interfacial layer contained mostly InAs and a small portion of other five binary phases. Heating at 500 °C or higher temperatures resulted in an extensive interaction and degradation of the contact. The contact formed at 450 °C, 30 s exhibited tensile stress of 5.6×109 dyne cm−2 at the Ti/Pt bilayer, but the metal adhesion remained strong. Rapid thermal processing at 450 °C for 30 s decreased the specific contact resistance to a minimum with an extremely low value of 3.4×10−8 Ω cm2 (0.08 Ω mm), which is very close to the theoretical prediction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101110
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  • 16
    Electronic Resource
    Electronic Resource
    Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1114-1115 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-threshold double-heterostructure ridge-waveguide lasers have been fabricated in GaAs/AlGaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed threshold current of the best ridge-waveguide laser is 50 mA, with differential quantum efficiency of about 9% per facet. Broad-area lasers fabricated on the same wafer have pulsed threshold current densities as low as 300 A/cm2 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99178
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  • 17
    Electronic Resource
    Electronic Resource
    FMR and TEM studies of annealed and magnetically annealed thin bilayer films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6101-6103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of annealing and magnetic annealing on the magnetic and structural properties of NiFe/FeMn has been assessed by, respectively, ferromagnetic resonance (FMR) and transmission electron microscopy (TEM). A straight anneal, at 350 °C for 1 h, led to the disappearance of the interfacial exchange anisotropy, HE, and to the appearance of FMR spin-wave resonance (SWR) modes. Interdiffusion takes place at the interface and the originally columnar NiFe and FeMn grains tend to become equiaxed. In cross-section view, [011] zone axes are prominent in both layers. Although magnetic annealing did not seem to affect the structural properties of the system, features of the SWR spectra and the HE effect were sensitive to the orientation of the magnetic field during anneal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342106
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  • 18
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy of Co-Cr films for magnetic recording (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3813-3815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of Co-Cr thin films for perpendicular magnetic recording has been examined by transmission electron microscopy in both conventional (bright field/dark field and selected area diffraction) and convergent beam electron diffraction modes. Results of as-deposited samples indicate that the films consist of well-oriented c axis structures. A range of microstructures (columnar morphology, transition layers, twins, etc.) have been observed. These and other results will be presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338605
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  • 19
    Electronic Resource
    Electronic Resource
    Photoluminescence and x-ray properties of heteroepitaxial gallium arsenide on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2161-2164 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the residual impurities and defects in heteroepitaxial GaAs films grown by molecular-beam epitaxy on 〈100〉 Si substrates. Low-temperature photoluminescence measurements are used to identify residual impurity and deep defect levels in unintentionally doped heteroepitaxial GaAs and compared to homoepitaxial GaAs grown under similar conditions. Scanning Lang x-ray measurements demonstrate that the heteroepitaxial layers are under biaxial tensile stress in the surface parallel direction. The presence of internal tensile stress is also corroborated by double crystal x-ray rocking curve measurement which shows tetragonal compression in the surface perpendicular direction. This is also the first reported use of interferometric techniques for studying photoluminescence properties of a wide-gap semiconductor in the near infrared region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336353
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  • 20
    Electronic Resource
    Electronic Resource
    Micro/magnetic structural development in Co-Ni-Cr and Co-Ni-Cr/Cr films for longitudinal recording media (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3266-3268 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of Co-Ni-Cr and Co-Ni-Cr/Cr films have been examined using transmission electron microscopy in conventional bright/dark-field imaging, selected-area diffraction, convergent beam electron diffraction, as well as in Lorentz electron microscopy imaging mode. The crystallographic orientation and magnetic domain structure have been characterized as a function of film thickness. The results indicate that amorphous Co-Ni-Cr films form prior to the formation of small randomly oriented equiaxed grains during deposition on amorphous substrates. As the film thickness increases, some of the small grains grow preferentially with their c axis parallel to film plane, but others with their c axis at an angle of 62° from the film plane. Longitudinal domain structures of the films were found to consist of Néel walls associated with cross-tie walls and Bloch lines. Each domain contains a large amount of the magnetic ripple-type structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340807
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