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  • 11
    Electronic Resource
    Electronic Resource
    Combined application of spreading-resistance and electron-microprobe depth profiling on GaAs:Zn and Si:P
    Amsterdam : Elsevier
    Applied Surface Science 50 (1991), S. 470-474 
    Details
    ISSN: 0169-4332
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0169-4332(91)90220-E
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  • 12
    Electronic Resource
    Electronic Resource
    Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique (1986)
    Springer
    Applied physics 39 (1986), S. 37-48 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion of Au in dislocation-free or plastically deformed Si (1011 to 1013 dislocations/m2) was measured with the aid of the spreading-resistance technique. The Au profiles produced indislocation-free Si slices by in-diffusion from both surfaces possess nonerfc-type U shapes as predicted by the so-called kick-out diffusion model. This model is used to calculate the contribution of self-interstitials to the (uncorrelated) Si self-diffusion coefficient,D I SD =0.064×exp(−4.80 eV/kT)m2 s−1, from the present and previous data on the diffusivity and solubility of Au in Si in the temperature range 1073–1473 K. Inhighly dislocated Si the diffusion of Au is considerably faster than in dislocation-free Si. From the erfc-type penetration profiles found in this case, effective Au diffusion coefficients were deduced and combined with data on the solubility of Au in Si. ThusC i eq D i=0.0064 ×exp(−3.93 eV/kT)m2 s−1 was obtained in the temperature range 1180–1427 K, whereC i eq andD i are the solubility and diffusivity of interstitial Au in Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01177162
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    Paper (German National Licenses)
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  • 13
    Electronic Resource
    Electronic Resource
    Diffusion and solubility of zinc in dislocation-free and plastically deformed silicon crystals (1991)
    Springer
    Applied physics 53 (1991), S. 65-74 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 Wp ; 61.70 Yq ; 64.75.+g ; 66.30 Jt ; 66.30 Lw
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Floating-zone Si crystals enclosed in quartz ampoules were exposed to Zn vapour released by an elemental diffusion source. Penetration profiles of Zn in Si were recorded using the spreading-resistance technique or neutron activation analysis. Both the erfc-type distributions observed in plastically deformed specimens and the non-erfc profiles determined on dislocationfree wafers are consistently interpreted within the framework of the kick-out model. As an implication, Si self-interstitials generated in excess by interstitial-to-substitutional transitions of in-diffusing Zn atoms annihilate not only at the surface but also at dislocations. On the other hand, dislocation-induced segregation of Zn appears to be rather minor, as revealed by transition electron microscopy. Combining the Zn incorporation rate in dislocation-free Si with solubility data from saturated specimens yields the self-interstitial contribution to the Si self-diffusion coefficient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323437
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  • 14
    Electronic Resource
    Electronic Resource
    Volume and grain boundary diffusion of implanted 113Sn in aluminium (1991)
    Springer
    Applied physics 53 (1991), S. 297-302 
    Details
    ISSN: 1432-0630
    Keywords: 66.30Jt ; 61.80J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Volume and grain boundary diffusion of 113Sn in aluminium was investigated with the radiotracer method. The implantation technique was used for tracer deposition to avoid problems of tracer hold-up caused by the oxide layer always present on aluminium. The diffusion penetration was chosen large enough to permit serial sectioning of samples with the aid of a microtome. The temperature dependence of the volume diffusivity was determined as D(T)=4.54×10−5×exp[−(114.5±1.2)kJmol−1/RT] m 2 s −1. This confirms previous measurements from our group which already showed that Sn is the fastest foreign metal diffusor so far investigated in aluminium. Grain boundary diffusion of 113Sn in Al polycrystals was measured in the type-B kinetic regime. The grain boundary diffusion product P=sδD gb (s=segregation factor, δ=grain boundary width, D gb=grain boundary diffusivity) was found to be strongly affected by the impurity content of aluminium. For Al polycrystals of 99.9992% nominal purity we obtained P 5N(T)=1.08×10−8exp [−(96.9±7.5) kJ mol−1/RT] m3 s−1 and for less pure Al polycrystals of 99.99% nominal purity P 4N(T)=3.0×10−10 exp [−(90.1±4.2) kJ mol−1/RT] m3 s−1 was determined. The grain boundary diffusion product in the purer material is more than one order of magnitude higher than in the less pure material. Very likely this is an effect of co-segregation of non-diffusant impurities into the grain boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00357191
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  • 15
    Electronic Resource
    Electronic Resource
    Theory of tracer-diffusion in the wurtzite-structure with applications to hexagonal ice (1975)
    Springer
    The European physical journal 20 (1975), S. 281-288 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A theory for the tracer self-diffusion by a vacancy mechanism in the wurtzitelattice is developed into which the effects of Bardeen-Herring correlation are included in a rigorous way. The isotope effect parameter is calculated for the limiting case in which the jump process may be treated as the jump of an individual particle and by means of classical statistics. As an interesting example self-diffusion in hexagonal ice is considered which occurs by exchange of entire water molecules with molecular vacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01352590
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  • 16
    Electronic Resource
    Electronic Resource
    Implantation and diffusion of 73As in GaAs and GaP (2000)
    Springer
    Hyperfine interactions 129 (2000), S. 337-347 
    Details
    ISSN: 1572-9540
    Keywords: diffusion ; 73As ; GaAs ; GaP ; computer simulation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Self-diffusion on the As sublattice in intrinsic GaAs and foreign-atom diffusion on the P sublattice in intrinsic GaP were investigated in a direct way by As tracer diffusion measurements using the radioisotope 73As. For this purpose 73As was implanted in both materials at the ISOLDE facility of CERN. Then diffusion annealings were performed followed by serial sectioning and counting of the radioactivity in each section. The resulting profiles were simulated within a computer model which accounts for the observed loss of tracer to the diffusion ambient. The so-obtained diffusion coefficients for As in GaAs and GaP are compared with existing diffusivities in these compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1012641212173
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