Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
78 (1995), S. 4273-4275
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Nanocrystalline Si particles of 10 nm size, doped with traces (1 at. %) of Sn, are prepared by mechanical attrition in an inert ambient. After stain-etching, the particles photoluminesce at room temperature. 119Sn Mössbauer spectroscopy, Raman scattering, photoluminesce, and Fourier transform infrared spectroscopy measurements performed as a function of stain-etching time reveal systematic changes, and suggest that the molecular structure of porous Si consists of nanocrystalline Si particles with surfaces passivated by H and/or O atoms. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359892
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