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  • 11
    Electronic Resource
    Electronic Resource
    Ferromagnetic metal/semiconductor hybrid structures for magnetoelectronics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5369-5371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the following new ferromagnetic metal/semiconductor heterostructure material systems: (1) Fe/InAs(100)-4×2, (2) Fe/InAs(graded)/GaAs(100), and (3) Fe/InAs/AlSb/GaSb/AlSb/InAs/GaAs resonant tunneling diodes. Single crystal Fe films have been stabilized in these structures using molecular beam epitaxy growth, as evidenced by low energy electron diffraction. The magnetic and electrical properties have been studied using in situ (and focused) magneto-optical Kerr effect, alternating gradient field magnetometry, and current–voltage measurements. The results show that Fe/InAs based heterostructures are very promising systems for use in future magnetoelectronic devices as they have well defined magnetic properties as well as favorable electrical properties. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369980
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  • 12
    Electronic Resource
    Electronic Resource
    Domain wall trapping in controlled submicron ferromagnetic elements (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4727-4729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The domain configuration in permalloy wires (30 nm thick, 10 μm wide, and 205 μm long) with a wide size range of a narrow central bridge (5 μm long and w μm wide; 0.5≤w≤10 μm) were investigated in both their demagnetized and remanent states using magnetic force microscopy and the results were confirmed by micromagnetic calculations. At the bridge region, domain walls were found to be shifted by a small external field. Scanning magneto-optical Kerr effect revealed that the coercivity in these structures are the same as that in a straight wire, suggesting that domain wall movement is the dominant process in the magnetization reversal of these structures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373140
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  • 13
    Electronic Resource
    Electronic Resource
    Domain nucleation processes in mesoscopic Ni80Fe20 wire junctions (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3032-3036 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization reversal process in permalloy (Ni80Fe20) wire junction structures has been investigated using magnetoresistance (MR) measurements and scanning Kerr microscopy. A combination of electron beam lithography and a lift-off process has been utilized to fabricate wires consisting of two 200 μm length regions with distinct widths w1 and w2 in the range 1–5 μm. Longitudinal MR measurements and magneto-optic Kerr effect hysteresis loops demonstrate that the magnetization reversal of the complete structure is predominantly determined by the wider region for fields applied parallel to the wire axis. Magnetic force microscopy and micromagnetic calculations show that several domain walls nucleate in the wider part and are trapped in the junction area. This implies that domain nucleation at the junction of the wire initiates magnetization reversal in the narrow half. As a consequence, the switching fields are found to be identical in both halves in this case. These results suggest the possibility of designing structures which can be used to "launch" reverse domains in narrow wires within a controlled field range. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372295
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  • 14
    Electronic Resource
    Electronic Resource
    Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures (invited) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6740-6744 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two major problems in spin electronics remain to be solved: room temperature spin injection at a source and spin detection at a drain electrode. The lateral size of magnetic contacts and the presence of a potential barrier at the interface are believed to have a key influence on the efficiency of both of these processes. We therefore aimed to clarify these issues by studying spin-polarized transport across epitaxially grown single crystal Fe (001)/GaAs nanoclusters and at the Schottky barrier formed at Ni80Fe20/GaAs interfaces. We observed a negative contribution to the magnetoresistance of an ultrathin (2.5 ML) discontinuous epitaxial Fe film as occurs in tunnel magnetoresistance. This result suggests that spin transport via GaAs is possible on the nanoscale. In the continuous NiFe/GaAs structures, circularly polarized light was used to create a population of spin-polarized electrons in the GaAs substrate and spin-polarized electron transport across the interface at room temperature was detected as an electrical response associated with the field-dependent photocurrent. Surprisingly, highly efficient spin transmission is observed at room temperature, indicating that there is no significant loss of spin polarization for electrons crossing the interface. This result unambiguously demonstrates that spin detection is possible at room temperature in a continuous ferromagnet/semiconductor contact in the presence of the Schottky barrier. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361045
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  • 15
    Electronic Resource
    Electronic Resource
    Suppression of 90° spin switching in Co nanomagnets grown on the Cu(110)-{2×1}O surface (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6683-6685 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the effect of oxygen on the CO-induced 90° spin switching in the Co/Cu(110) system [Hope et al., Phys. Rev. B 57, 7454 (1998)]. The epitaxial fcc Co films were grown on the unsaturated Cu(110)-{2×1}O surface and their magnetic properties have been studied with in situ magneto-optic Kerr effect. The easy axis switch of the Co(110) films is suppressed when Co is grown on O exposed Cu surfaces. Scanning tunneling microscopy images of the film surface reveals the growth of elongated nanostructures preferentially oriented along the [001] direction, providing step-like edges for gas adsorption. The density of steps is similar to the density developing during growth on the clean Cu(110) surface but the step edges now run in the perpendicular direction. The suppression of the easy axis switch can be attributed to subtle changes of the number and adsorption probability of the available atop adsorption sites along the step edges for CO chemisorption. Our experiments highlight the remarkable chemical sensitivity and adsorption site dependence of the easy axis switch of the Co(110) nanomagnets. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1360259
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  • 16
    Electronic Resource
    Electronic Resource
    Giant enhancement of orbital moments and perpendicular anisotropy in epitaxial Fe/GaAs(100) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7156-7158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin and orbital magnetic moments and the perpendicular magnetic anisotropy of 8 and 33 monolayer epitaxial bcc Fe films grown on GaAs(100)-4×6 have been measured using x-ray magnetic circular dichronism and polar magneto-optical Kerr effect. Both the films have approximately the same spin moments of about 2.0μB close to that of the bulk value. The ultrathin film shows a giant orbital moment enhancement of about 300% with respect to the bulk value and a perpendicular interface anisotropy field HsFe–GaAs of the order of −5×104 Oe. This may be partially due to an increased degree of localization of electronic states at the Fe/GaAs interface associated with the atomic scale interface structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359473
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  • 17
    Electronic Resource
    Electronic Resource
    Sweep rate-dependent magnetization reversal in epitaxial Fe/GaAs(001) and Fe/InAs(001) thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5926-5928 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the magnetization reversal dynamics of epitaxial Fe thin films grown on GaAs(001) and InAs(001) studied as a function of field sweep rate in the range 0.01–160 kOe/s using magneto-optic Kerr effect. For 55 and 250 Å Fe/GaAs(001), we find that the hysteresis loop area A follows the scaling relation A∝H(overdot)α with α=0.03–0.05 at low sweep rates and 0.33–0.40 at high sweep rates. For the 150 Å Fe/InAs(001) film, α is found to be ∼0.02 at low sweep rates and ∼0.17 at high sweep rates. The differing values of α are attributed to a change of the magnetization reversal process with increasing sweep rate. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372569
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  • 18
    Electronic Resource
    Electronic Resource
    Magnetization reversal and magnetoresistance in a lateral spin-injection device (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6682-6685 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the magnetization reversal and magnetoresistance (MR) behavior of a lateral spin-injection device. The device consists of a two-dimensional electron gas (2DEG) system in an InAs quantum well and two ferromagnetic (Ni80Fe20) contacts: an injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and propagating through InAs are collected by the second contact. By engineering the shape of the permalloy film distinct switching fields (Hc) from the injector and the collector have been observed by scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20–60 Oe), at room temperature, over which magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370504
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  • 19
    Electronic Resource
    Electronic Resource
    Spin-dependent electron transport at the ferromagnet/semiconductor interface (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5804-5806 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A search for spin-dependent electron transport at the ferromagnet/semiconductor interface has been made by measuring the bias dependence of a photon excited current through the interface. A circularly polarized laser beam was used to excite electrons with a spin polarization perpendicular to the film plane. In samples of the form 3 nm Au/5 nm Ni80Fe20/GaAs (110), a significant transport current was detected with a magnitude dependent on the relative orientation of the spin polarization and the magnetization vector. At perpendicular saturation, the bias dependence of the photocurrent is observed to change in the range 0.7–0.8 eV when the helicity is reversed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369925
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  • 20
    Electronic Resource
    Electronic Resource
    Interlayer coupling and spin polarization of the nonmagnetic layers in Fe/Cu and Fe/Ag CMFs : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6190-6192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositionally modulated films (CMFs) of Fe/Cu and Fe/Ag, made by RF sputtering, were investigated with ferromagnetic resonance (FMR), nuclear magnetic resonance (NMR), and magneto-optical (MO) spectroscopy. Evidence of spin polarization of the nonmagnetic layers, related to the interlayer coupling, was obtained. Direct evidence of the penetration of an exchange field and the spin polarization of the conduction electrons in the nonmagnetic Cu layers was obtained in Fe/Cu CMFs by NMR. Spin-wave resonances were observed in Fe/Cu CMFs in FMR experiments, and the spin wave was found to be sustained by both the Fe and Cu sublayers. The MO spectra of Fe/Ag CMFs indicated that the conduction electrons of Ag are spin polarized and give an additional MO activity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355452
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