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  • 1
    Digitale Medien
    Digitale Medien
    Atomic structure of faceted planes of three-dimensional InAs islands on GaAs(001) studied by scanning tunneling microscope (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2265-2267 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The three-dimensional (3D) island structure was prepared by molecular beam epitaxy for the lattice mismatched InAs/GaAs(001) system and its images showing atomic structure on faceted planes were taken in situ by ultrahigh vacuum scanning tunneling microscopy (STM). The (113), (114), and (215) faceted planes are observed for the 3D islands. Based on the STM images, atomic structural models are proposed for the faceted surfaces. The surface structure of the (113) faceted planes we propose is different from those observed on the flat GaAs(113) surface. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.121273
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  • 2
    Digitale Medien
    Digitale Medien
    Two-step preparation of 6H–SiC(0001) surface for epitaxial growth of GaN thin film (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2468-2470 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A scratch-free and atomically flat 6H–SiC(0001) surface has been successfully prepared by a two-step method which combines atmospheric hydrogen treatment and ultrahigh vacuum Si etching. On this surface, a high-quality GaN(0001) thin film is obtained by radio frequency nitrogen plasma assisted molecular beam epitaxy. Its surface exhibits a typical terrace-plus-step morphology, which enables us to study various GaN(0001) surface superstructures and hollow-core defects with atomic resolution by scanning tunneling microscopy. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123883
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  • 3
    Digitale Medien
    Digitale Medien
    Erasable nanometer-scale modification at the Au/Si interface by ballistic electron emission microscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3668-3670 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report that local modification and its erasing with a nanometer-scale size can be performed at a Au/Si(111) interface using ballistic electron emission microscopy (BEEM). By applying a negative voltage on the tip, a region was created where no BEEM current flows at the interface and was imaged with BEEM. The modified area can be erased by applying a voltage with the opposite polarity. It is found that the minimum size of writing and erasing corresponds to Au grains, suggesting a method of rewritable memory on a nanometer-scale dimension. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.125423
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  • 4
    Digitale Medien
    Digitale Medien
    Clustering effect in the crystallization process of a CuZr amorphous alloy (1991)
    Springer
    Applied physics 52 (1991), S. 302-306 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.40.-a ; 61.16.FK ; 68.20.tt
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The structural relaxation and crystallization processes of the Cu50Zr50 amorphous alloy have been studied by field ion microscopy (FIM) on an atomic scale. An interesting phenomenon which we call the clustering effect was observed for the first time as far as we know. In the temperature range 673–723 K, clusters consisting of 3, 4, or 5 atoms formed and migrated towards certain crystalline centers. They then combined with one another and rearranged to produce an ordered atomic array. This clustering process including the formation, migration, combination and rearrangement of clusters is considered as a structural relaxation process.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00324769
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  • 5
    Digitale Medien
    Digitale Medien
    Atomic structures of two-dimensional strained InAs epitaxial layers on a GaAs(001) surface: in situ observation of quantum dot growth (2000)
    Springer
    Journal of experimental and theoretical physics 91 (2000), S. 1000-1010 
    Details
    ISSN: 1090-6509
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Scanning tunneling microscopy and reflection high-energy electron diffraction under ultrahigh vacuum conditions were used to make an in situ study of atomic structures at the surface of an InAs/GaAs heterostructure grown by molecular-beam epitaxy. It was observed that the deposition of approximately 0.3 ML of indium on an arsenic-enriched GaAs(001)-2 × 4 surface leads to the formation of the 4 × 2 phase while the deposition of 0.6 ML indium leads to the appearance of a new 6 × 2 reconstruction. It is shown that layer-by-layer two-dimensional epitaxial growth of InAs on GaAs(001) as far as 13 monolayers can only be achieved if the growth front reproduces the 4 × 2 or 6 × 2 symmetry of the substrate and models of 4 × 2 and 6 × 2 reconstructions are proposed. Atomic-resolution images of faceted planes on the surface of three-dimensional islands in an InAs/GaAs(001) system were obtained for the first time and structural models of these were developed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1334990
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