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  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen bonding of water in organic solvents. 1 (1974)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 1723-1727 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100610a009
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  • 2
    Electronic Resource
    Electronic Resource
    Hydrogen bonding of water in organic solvents. II. Change of water structure with composition (1974)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 1727-1731 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100610a010
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical and structural study of partially relaxed Ga0.92In0.08As(p+)/ GaAs(n) diodes (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1303-1309 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of in-plane lattice mismatch have been studied for Ga0.92In0.08As(p+)/GaAs(n)/GaAs(n+) diodes. Different in-plane mismatch at the p–n junction was introduced by a variation of the GaInAs layer thickness (h=0.1, 0.25, 0.5, and 1 μm). Capacitance-voltage (C-V) measurements with different frequencies show a higher-frequency dispersion for a greater lattice-mismatched sample. From the frequency dependence of the C-V curve, single-level charged interface-state density (Ns) was estimated using the effective parallel capacitance and conductance components. The average charged interface density Nss was also estimated using Voltage-intercept (Vint) method. Nss shows a linear dependence on the in-plane mismatch. The charged interface state density is approximately 2.7 Δa(parallel)/a30 for partially lattice-relaxed heterojunctions. For the 1 μm sample, the forward I-V characteristic shows quasi-Fermi level pinning effect. Admittance spectroscopy measurement gives an equilibrium Fermi energy at about Ev+0.36 eV with hole capture cross section cp=2.7×10−15 cm2 for the 1 μm sample and at Ev+0.21 eV and cp=2.4×10−16 cm2 for the 0.5 μm sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346699
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  • 4
    Electronic Resource
    Electronic Resource
    Increased peak current in AlAs/GaAs resonant tunneling structures with GaInAs emitter spacer (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1853-1859 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-consistent simulation results are presented for the symmetric barrier AlAs/GaAs/AlAs resonant tunneling structures with a GaInAs emitter spacer well [Appl. Phys. Lett. 58, 1077 (1991)]. A simple model is used to handle the two-dimensional emitter accumulation electrons. These accumulation electrons below the emitter launching energy are treated as pseudo three-dimensional electrons, distributed continuously down to a certain minimum energy. With a proper choice of this bottom energy, a good agreement is achieved in the peak position between the simulation results and the experimental data. The best fit value of the bottom energy for the accumulated electrons was about 2/3ΔEc below the emitter conduction band edges for all diodes. Also, the simulation results could explain the systematic variation of the experimental peak current and voltage values as a function of the GaInAs spacer well depth. In order to provide a design guideline, the layer parameters were systematically varied and the simulation results on the peak current are presented. The peak current density is found to be most sensitive to the AlAs barrier thickness, especially to the emitter barrier thickness, and it is further increased by using an emitter spacer well. Based on our theoretical analyses, a 10-A(ring) AlAs double barrier and 50-A(ring) GaAs well with a 50-A(ring) Ga0.9In0.1As emitter spacer well could produce a peak current density as high as 2200 kA/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351170
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  • 5
    Electronic Resource
    Electronic Resource
    Anomalous Hall effect in InSb layers grown by metalorganic chemical vapor deposition on GaAs substrates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5009-5013 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InSb epitaxial layers have been grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition. A 3.15-μm-thick film yielded an x-ray full width at half maximum of 171 arcsec. A Hall mobility of 76 200 cm2/V s at 240 K and a full width at half maximum of 174 arcsec have been measured for a 4.85-μm-thick epilayer. Measured Hall data have shown anomalous behavior. A decrease in Hall mobility with decreasing temperature has been observed and room-temperature Hall mobility has increased with thickness. In order to explain the anomalous Hall data, and the thickness dependence of the measured parameters, the Hall coefficient and Hall mobility have been simulated using a three-layer model including a surface layer, a bulklike layer, and an interface layer with a high density of defects. Theoretical analysis has shown that anomalous behavior can be attributed to donorlike defects caused by the large lattice mismatch and to a surface layer which dominates the transport in the material at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353821
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of InTlSb/InSb grown by low-pressure metal-organic chemical vapor deposition on a GaAs substrate (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3196-3198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of InTlSb, a new long wavelength infrared material, are investigated. InTlSb/InSb epilayers grown by low-pressure metal-organic chemical vapor deposition on semi-insulating GaAs substrates were characterized using Auger electron spectroscopy and Fourier transform infrared spectroscopy. Auger electron spectra confirm the presence of thallium. Transmission measurements at 77 K indicate an absorption shift from 5.5 μm for InSb up to 8 μm for InTlSb that is confirmed by photoconductivity measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356121
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  • 7
    Electronic Resource
    Electronic Resource
    Detailed analysis of carrier transport in InAs0.3Sb0.7 layers grown on GaAs substrates by metalorganic chemical-vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5820-5828 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs0.3Sb0.7 layers with mirrorlike morphology have been grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition. A room-temperature electron Hall mobility of 2×104 cm2/V s has been obtained for a 2-μm-thick layer. Low-temperature resistivity of the layers depended on TMIn flow rate and layer thickness. Hall mobility decreased monotonically with decreasing temperature below 300 K. A 77 K conductivity profile has shown an anomalous increase in the sample conductivity with decreasing thickness except in the near vicinity of the heterointerface. In order to interpret the experimental data, the effects of different scattering mechanisms on carrier mobility have been calculated, and the influences of the lattice mismatch and surface conduction on the Hall measurements have been investigated by applying a three-layer Hall-effect model. Experimental and theoretical results suggest that the combined effects of the dislocations generated by the large lattice mismatch and strong surface inversion may lead to deceptive Hall measurements by reflecting typical n-type behavior for a p-type sample, and the measured carrier concentration may considerably be affected by the surface conduction up to near room temperature. A quantitative analysis of dislocation scattering has shown significant degradation in electron mobility for dislocation densities above 107 cm−2. The effects of dislocation scattering on hole mobility have been found to be less severe. It has also been observed that there is a critical epilayer thickness (∼1 μm) below which the surface electron mobility is limited by dislocation scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358395
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  • 8
    Electronic Resource
    Electronic Resource
    Designing resonant tunneling structures for increased peak current density (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1077-1079 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a simple method to increase the peak current density in a double-barrier resonant tunneling structure by using a small band-gap emitter spacer layer. We have fabricated AlAs/GaAs/AlAs resonant tunneling structures using a Ga1−xInxAs spacer layer in the emitter. The peak current density was increased systematically with the increasing indium content by a factor ranging from 2.5 at x=0.05 to 5 at x=0.2 from the value at x=0. The increased peak current density was accompanied by increases in the peak voltage and peak-to-valley ratio. The lowering of the bottom of electron energy distribution in the GaInAs emitter spacer layer is shown to explain both the peak current and voltage increases. In the sequential tunneling picture, the peak current increases because of the increase in the number of resonant electrons which occurs if the bottom of energy distribution is lowered. We also report for the first time a strong bistability in the current-voltage characteristics at T≤240 K in the asymmetric spacer layer structure (GaInAs emitter, GaAs collector) in an otherwise symmetric structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104376
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  • 9
    Electronic Resource
    Electronic Resource
    Preparation of 4-phenyl medium- and large-sized ring ketones (1973)
    s.l. : American Chemical Society
    The @journal of organic chemistry 38 (1973), S. 4067-4068 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00987a025
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  • 10
    Electronic Resource
    Electronic Resource
    X-ray interference measurement of ultrathin semiconductor layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1774-1776 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized, using the interference structure in x-ray rocking curves, a single or double strained GaInP layer grown on an InP substrate. The measured GaInP layer thicknesses are 9±3 A(ring) and 107±3 A(ring) for the single strained layer samples and 7 A(ring)/50 A(ring) and 32 A(ring)/32 A(ring) for the double strained layer samples. The rocking curve results for the 107 A(ring) single-barrier sample and the 7 A(ring)/50 A(ring) double-barrier sample agreed well with the cross-section transmission electron microscopy data and the secondary-ion mass spectrometry data. The x-ray interference structure for the single strained barrier samples indicates the existence of many half-monolayer steps within the 1×1 mm2 x-ray beam spot at each GaInP/InP interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102189
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