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  • 1
    Electronic Resource
    Electronic Resource
    Direct deposition of highly coercive gamma iron oxide thin films for magnetic recording (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7019-7021 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct preparation of high coercivity gamma iron oxide (γ-Fe2O3) thin films by chemical vapor pyrolysis techniques have been described. Films deposited at temperatures above 500 °C have the γ- and those deposited below 500 °C have the α-Fe2O3 phase. Gas phase reactions leading to oxygen deficiency in the vicinity of substrate and consequently controlled in situ oxidation of Fe3O4 appear responsible for direct growth of the γ-Fe2O3 film. Magnetic properties of these films are optimized by adding cobalt. High coercivity values of 3 kOe for directly deposited γ-Fe2O3 films containing 6 at. % of cobalt are obtained along with reasonable values of remanence ≈2.8 kG and squareness ratio of 0.83. These values are considerably superior for magnetic recording in comparison to those for γ-Fe2O3 films obtained by reduction and reoxidation of α-Fe2O3 films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355062
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of resistivity and Hall mobility in floating zone grown bulk silicon-germanium alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4341-4343 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon germanium (Si1−xGex) alloys have been grown by the floating zone method with x varying from 0.5 to 20 wt %. Resistivity and Hall effect measurements have been carried out in the temperature range 80–410 K. The Hall mobility has been found to decrease with Ge concentration varying between 0.5 and 4.5 wt % and thereafter an increase has been observed. The Hall mobility has also been found to decrease with an increase in temperature in these alloys following the AT−y relation, where A is a constant and T is the temperature in K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350817
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  • 3
    Electronic Resource
    Electronic Resource
    Study of silver addition to Y1Ba2Cu3O7−y screen printed thick films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1575-1579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the effect on the superconducting and microstructural properties of YBa2Cu3O7−x screen printed thick films as a function of silver content (in the form of Ag and Ag2O) from 0 to 40 wt. % by employing different experimental techniques has been carried out. It has been found that silver improves the sinterability and intergrain connectivity and reduces the normal state resistivity. The superconducting transition temperature of the above films was found to be in the range of 82 to 91 K. Our results show that a small addition of silver (Ag or Ag2O) helps in enhancing the superconducting properties. However, large amounts lead to formation of 211 phase as the decomposed product and thereby deteriorate the quality of the superconductor. Silver has been found to remain as metal in the samples for the entire range. Further, in light of our results, it seems that an addition of Ag metal is more beneficial than the addition of Ag2O.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349520
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  • 4
    Electronic Resource
    Electronic Resource
    Transport critical-current properties of Bi2Sr2CaCu2Ox/Ag tapes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7981-7983 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-transport critical-current density Jc is essential for major bulk applications of the high-Tc superconductors. The critical temperature Tc of the 2212 Ag sheathed tapes was found to increase by quenching the samples, but the transport critical-current density Jc for a slow-cooled sample was higher at low temperature. Jc as well as its temperature dependence was found to be influenced by the heat treatments, i.e., whether the sample was quenched or slow cooled after the sintering heat treatment. The zero-field Jc was found to be quadratic in 1-T/Tc for the slow-cooled sample, while a linear dependence was observed for the quenched sample. These results are explained in terms of the weak-link structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353910
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic studies of Ce4+ compensated Co-doped yttrium iron garnet thin film grown by chemical vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 953-956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low pressure metalo-organic chemical vapor deposition (LPMOCVD) technique to form Co2+ and Ce4+ doped yttrium iron garnet (Y3−xCexFe5−xCoxO12: Co,Ce:YIG) films is described. A large concentration of Co2+ doping with x=0.3–0.7 results in uniaxial anisotropy perpendicular to the plane of the film with high coercivity values and sufficiently high saturation magnetization values. This has been possible by an alternate doping scheme where commonly used compensator, Ge4+ at Fe3+ sites has been replaced by a new compensator Ce4+ at Y3+ sites in the Co-doped YIG films. The structural and compositional aspect of stabilized garnet phase in Co2+,Ce4+:YIG thin films and optical, thermomagnetic and magnetic hysteresis properties are presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360877
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of heat treatment on redistribution of hydrogen in directionally cast polycrystalline silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1670-1671 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of heat treatment on the minority-carrier surface recombination velocity in hydrogen-passivated polycrystalline silicon samples has been studied in the temperature range 350–500 °C using the electron-beam-induced current mode of a scanning electron microscope. Minority-carrier trap center densities, calculated from the minority-carrier surface recombination velocity data, varying from 8×1012 to 1.2×1012 cm−2 have been measured. A finite decrease in the minority-carrier trap center density indicates that hydrogen atoms diffuse to the surface from the bulk of the hydrogenated samples. The activation energy of hydrogen diffusion in silicon is found to be 0.53±0.04 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99053
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  • 7
    Electronic Resource
    Electronic Resource
    Determination of minority-carrier diffusion length in a p-silicon wafer by photocurrent generation method (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3550-3552 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nondestructive method to determine the diffusion length of minority carriers in a p-silicon wafer is outlined. This novel method is based on creating an accumulation layer on one side and an inversion layer on the other side of the wafer by depositing thin semitransparent layers of high (e.g., palladium) and low (e.g., aluminum) workfunction metals, respectively. The wafer acquires a structure akin to p+-p-n+ and is capable of generating a photocurrent when illuminated. The photocurrent Isc (where sc represents short circuit) as a function of the intensity Pin of a monochromatic radiation incident on the accumulation layer (p+) side of the wafer is measured. The diffusion length L is determined from the slope of the Jsc vs Pin curve. The values of L so determined were compared with that determined from the measurement of spectral response by illuminating the wafer from the inversion layer (n+) side and were found to be in excellent agreement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337610
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  • 8
    Electronic Resource
    Electronic Resource
    The effect of heat treatment on redistribution of fast diffusing impurities in polycrystalline silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 942-944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of heat treatment on minority carrier surface recombination velocity in polycrystalline silicon samples has been examined in the temperature range (600–900 °C) using the electron-beam induced-current mode of a scanning electron microscope. Minority carrier trap center density, calculated from minority carrier surface recombination velocity data, varying from 8.9×1011 to 6.37×1013 cm−2 have been measured. A finite variation in the minority carrier trap center density indicates that metallic impurities diffuse to the surface from the bulk of the sample. The activation energy of impurity atom diffusion is found to be 1.1±0.1 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341900
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  • 9
    Electronic Resource
    Electronic Resource
    Identification of a moving phase of Al2O3 by Auger electron spectroscopy in the back aluminized surface of Si (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2847-2848 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Backsurface aluminization of n on p silicon solar cells is preferred because it can provide backsurface field and getter lifetime killing impurities. In this work, depth profiling has been done on aluminized backsurfaces of silicon wafers which were heat treated at 660–820 °C in an ambient of POCl3 and oxygen gas mixture and a new moving phase of Al2O3 has been detected by Auger electron spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111444
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  • 10
    Electronic Resource
    Electronic Resource
    Bi-Sr-Ca-Cu-O superconductor with improved zero resistance temperature of 122 K (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3646-3648 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An improvement in zero resistance temperature (T0c) of the 2223 phase in the Bi-Sr-Ca-Cu-O system by using a nominal composition Bi0.8Pb0.2SrCa2Cu2Ox has been achieved. The bulk Bi0.8Pb0.2SrCaCu2Ox samples synthesized from a matrix reaction method exhibited a superconducting transition with T0c of 110 K. Addition of one Ca-atom per molecule of the above composition, that is, Bi0.8Pb0.2SrCa2Cu2Ox resulted in enhanced T0c of 122 K with onset temperature (Tonsetc) of 140 K. Interestingly, T0c of 122 K was also observed in the Pb-free BiSrCa2Cu2Ox samples, but it decreases to 115.5 K after 3–4 thermal cycles. However, no such decrease in T0c was observed in the Pb-doped samples, indicating the formation of stable 2223 phase. On the basis of x-ray diffraction, energy dispersive spectra and scanning electron microscopy data, it is concluded that excess of Ca facilitate the nucleation of 2223 phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105607
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