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  • 1
    Digitale Medien
    Digitale Medien
    Time-resolved measurement of tunneling and energy relaxation of hot electrons in GaAs/AlGaAs double quantum well structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1996-1998 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The tunneling and cooling times of photoexcited hot electrons in AlGaAs/GaAs double (one narrow and the other wide) quantum well structures have been measured using photoluminescence excitation correlation spectroscopy. The tunneling time was of the order of 200 ps for a 60 A(ring) barrier. The tunneling is the indirect process assisted by the emission of optical phonons. The relaxation time of electrons as a function of the kinetic energy shows a threshold for cooling via the emission of optical phonons.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102144
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  • 2
    Digitale Medien
    Digitale Medien
    Spectral photoconductivity in n-modulation-doped GaAs/AlGaAs quantum well structures (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 106-108 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The in-plane photoconductivity of n-modulation-doped quantum well structures of GaAs/AlGaAs is experimentally studied as a function of the incident photon energy. Negative photoconductivity with surprising dependences on background illumination, temperature, and electric field is observed for photon energies slightly below the band gap of GaAs. The effect may be due to optical filling of ionized deep donors in AlGaAs as well as to an optical backgating effect. High positive photoconductivity is present above the band gaps—in contrast to theoretical expectations from previous optical transport experiments.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98638
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  • 3
    Digitale Medien
    Digitale Medien
    Subpicosecond photoluminescence from radiation-damaged Ga0.47In0.53As (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 460-462 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The luminescence of photoexcited carriers far above the band gap of Ga0.47In0.53As is studied with subpicosecond time resolution. In undamaged material the luminescence decays with characteristic times of 2–4 ps in the energy range between 1.9 and 1.4 eV, due to the rapid energy relaxation of electrons and holes far above the band edges. In radiation-damaged (He+ bombarded) material, luminescence decay times as short as 0.9 ps are observed. The luminescence spectra give evidence for extreme nonequilibrium distributions of the photoexcited carriers, caused by the ultrafast recombination, which—in radiation-damaged samples—is a faster process than energy relaxation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101852
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  • 4
    Digitale Medien
    Digitale Medien
    Negative photoconductivity due to carrier drag in GaAs/AlGaAs quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2097-2099 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Negative photoconductivity caused by "carrier drag'' is experimentally verified for the first time. In p-modulation-doped GaAs/AlGaAs quantum wells carrier drag, leading to "negative absolute mobility'' of injected minority electrons, results in a decrease of the total in-plane current in the quantum wells. The temperature dependence of the measured differential photoconductivity quantitatively agrees with the expected behavior due to the effect of electron-hole scattering.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101175
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  • 5
    Digitale Medien
    Digitale Medien
    Extremely high negative photoconductivity in p-modulation-doped GaAs quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 801-803 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In p-modulation-doped quantum wells of GaAs/AlGaAs extremely high negative photoconductivity is observed at low temperatures. The in-plane sheet resistance can be increased by a factor of more than 60 with illumination of less than 1 W/cm2. Spectral analysis shows that the effect is mainly due to hole trapping in the potential minima of AlGaAs and subsequent recombination of minority electrons.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.99288
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  • 6
    Digitale Medien
    Digitale Medien
    Single heterostructures for optical transport experiments (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1815-1817 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We introduce a new GaAs/AlxGa1−xAs single heterostructure, which allows local optical injection of a one-component confined plasma. The heterojunction is placed in the undoped region of a p-i-n structure, which provides a high built-in electric field for the separation of injected electrons and holes, as well as for the two-dimensional confinement of electrons. A time-of-flight measurement of the majority-electron drift velocity at room temperature is demonstrated.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98532
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  • 7
    Digitale Medien
    Digitale Medien
    Special narrowing of ultrashort laser pulses by self-phase modulation in optical fibers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1017-1019 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We demonstrate experimentally and theoretically that frequency-modulated femtosecond laser pulses can be spectrally narrowed by self-phase modulation in optical fibers. We obtain a reduction of the spectral linewidth from 10.6 down to 2.7 nm, limited only by the laser power in the fiber. Applications for extracavity conversion of femtosecond lasers to narrow-linewidth picosecond sources are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109820
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  • 8
    Digitale Medien
    Digitale Medien
    Microcavity effects in the photoluminescence of GaAs microcrystals (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1958-1960 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have fabricated submicron GaAs crystals by pulverization of bulk material. Size selected crystals exhibit modified photoluminescence spectra with blue shifts of up to 10 meV. The observed behavior is explained by the enhancement and the inhibition of spontaneous emission in a three-dimensional optical microcavity formed by a semiconductor microcrystal.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109503
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  • 9
    Digitale Medien
    Digitale Medien
    Ultrashort carrier lifetimes in H+ bombarded InP (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 926-928 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We studied the lifetimes of photoexcited carriers in H+ bombarded InP for different damage doses by means of femtosecond luminescence spectroscopy. The lifetime decreases down to 95 fs for a dose of 1×1016 cm−2. To our knowledge this is the shortest decay time for spontaneous light emission ever observed. The luminescence spectrum of the most damaged sample is inverted, indicating nonthermalized carrier distributions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.106303
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  • 10
    Digitale Medien
    Digitale Medien
    Ultrafast energy loss of electrons in p-GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 264-266 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigated the ultrafast energy relaxation of photoexcited minority electrons in highly doped p-GaAs by means of femtosecond time resolved luminescence (Δt〈90 fs). Our experiments allow the first observation of the extremely fast cooling of minority electrons within the Γ-valley. The electron mean energy decreases within 150 fs from 150 meV down to less than 50 meV. The total energy loss rate reaches values higher than 10−7 W per electron, representing the highest energy loss rates of electrons observed to date in monocrystalline semiconductors. Ensemble Monte Carlo simulations show that the electron-hole scattering is responsible for these high energy loss rates. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114777
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