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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1619-1621 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a stability analysis of coherent oscillations in series arrays of Josephson junctions with a matched resistive load. We find that arbitrarily large, dc biased arrays of Josephson junctions will phase lock most strongly when the capacitance parameter βc ≈1, and the bias current is about twice the critical current of the individual junctions.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 305-307 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reliable process has been developed for the fabrication of multilevel single-electron tunneling (SET) devices. Using this process, we have fabricated SET devices with Au-SiO-Al and Al-AlOx-SiO-Al overlap capacitors. The SET transistors exhibit voltage gain and, despite the complex device structure, have a low charge noise (7×10−5e/(square root of)Hz). Moreover, the use of overlap capacitors in SET devices results in a reduction of cross capacitances down to 8%. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2014-2016 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-electron tunneling transistor has been directly coupled on-chip to a high electron mobility transistor. The high electron mobility transistor (HEMT) is used as an impedance matching circuit with a gain close to unity. The HEMT transformed the 1.4 MΩ output impedance of the single electron tunneling (SET) transistor by two orders of magnitude down to 5 kΩ, increasing its bandwidth to 50 kHz. This circuit makes it possible to observe the motion of individual electrons at high frequencies. The requirements for the bandwidth in high frequency applications is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1042-1044 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/AlxOy islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1140-1142 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the inverter must exhibit voltage gain. Voltage gain was achieved by fabricating a combination of parallel-plate gate capacitors and small tunnel junctions in a two-layer circuit. Voltage gain of 2.6 was attained at 25 mK and remained larger than one for temperatures up to 140 mK. The temperature dependence of the gain agrees with the orthodox theory of single-electron tunneling. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 491-492 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Two superconducting single-electron transistors were used to build a push–pull amplifier stage with a voltage gain of 5.2 that dissipates only 10 fW of power. This amplification stage would be most useful for measuring the voltage across a high-impedance sample at low temperature. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 1 (1978), S. 0 
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Abstract Relevant mathematical properties of the Richards function are described, along with references to its employment in previous work, and a brief description is given of some of the difficulties encountered in its use. Two introductory experiments were undertaken: firstly, applying the Richards function to leaf growth of Impatiens parviflora DC; and secondly, applying the function to artificial sets of data of differing variability and differing spreads of observation-values along the growth curve. The purpose of the latter analysis was an attempt to elucidate some problems of fitting and interpretation arising in the first experiment. It was concluded that the prime aim in experimental work generally is the acquisition of data covering as large a range of sizes as possible; low variability of the replicate observations, while desirable, is not so important.
In another series of experiments, plants of Impatiens parviflora were grown at four different temperatures in the range 13–23°C inclusive. In terms of leaf dry weight, increase in temperature decreased the final size attained and increased the mean relative growth rate; the curvature of the growth curve and the mean absolute growth rate were, however, temperature independent. These results are brought together in a simple model which shows clearly how temperature affects the course of leaf dry weight increase in these plants. The results for leaf area are less clear, but both the mean absolute and relative growth rates increased with rise in temperature. The final area of a leaf and the curvature of the growth curve seemed to be little affected by temperatures in the range 16–23°C, but there was some evidence of differences in these features in leaves growing at 13°C. No model summary was attempted for leaf area increase.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 4 (1981), S. 0 
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Abstract The spatial and temporal relationships between carbon (C) metabolism and nitrogen (N) nutrition in grain legumes are of great academic interest with the added bonus that any data for economically important species may ultimately prove useful to breeders and growers. So far there are no data which can be used to relate differences in carbon usage by any symbiotic association with differences in economic yield. Much research has focussed on the dependence of dinitrogen fixation on photosynthate supply, on the C–N relationships of nodulated roots and nodules and on diurnal and seasonal profiles of dinitrogen fixation. In all these aspects a plethora of responses have been described, often based on insufficiently proven measurement techniques; consequently unequivocal conclusions cannot be drawn. We know little about within-species differences due to cultivar, strain of Rhi-zobium or environment, or about the proportions of any heritable variations which might be sufficiently large to merit inclusion among the selection criteria of grain legume breeders.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: A temperature gradient chamber (TGC) is described which enables elevated CO2 concentrations and a dynamic temperature gradient to be imposed on field crops throughout their life cycle under standard husbandry. Air is circulated through two double-walled polyethylene-covered tunnels connected to a split heat pump system to give a near-linear temperature gradient along each tunnel. Solar energy gain along each tunnel and exchange with outer tunnel air flow contribute to the temperature gradient and also produce diurnal and seasonal temperature fluctuations corresponding to ambient conditions. Mean temperature gradients of between 3 and 5°C have been recorded throughout the growing seasons of crops of lettuce, carrot, cauliflower and winter wheat. Elevated or present CO2 concentrations are maintained in each of two pairs of tunnels throughout the cropping season using pure CO2 injected through motorized needle valves. This system can realistically simulate aspects of the effects of projected future environmental change on crop growth, development and yield, and in particular tin-possible interaction of the effects of increased CO2 and temperature.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 17 (1994), S. 0 
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Stands of carrot (Daucus carota L.) were grown in the field within polyethylene-covered tunnels at a range of soil temperatures (from a mean of 7·5°C to 10·9°C) at either 348 (SE = 4·7) or 551 (SE = 7·7) μmol mol−1 CO2. The effect of increased atmospheric CO2 concentration on root yield was greater than that on total biomass. At the last harvest (137d from sowing), total biomass was 16% (95% CI = 6%, 27%) greater at 551 than at 348 μmol mol−1 CO2, and 37% (95% CI = 30%, 44%) greater as a result of a 1°C rise in soil temperature. Enrichment with CO2 or a 1°C rise in soil temperature increased root yield by 31% (95% CI = 19%, 45%) and 34% (95% CI = 27%, 42%), respectively, at this harvest. No effect on total biomass or root yield of an interaction between temperature and atmospheric CO2 concentration at 137 DAS was detected. When compared at a given leaf number (seven leaves), CO2 enrichment increased total biomass by 25% and root yields by 80%, but no effect of differences in temperature on plant weights was found. Thus, increases in total biomass and root yield observed in the warmer crops were a result of the effects of temperature on the timing of crop growth and development. Partitioning to the storage roots during early root expansion was greater at 551 than at 348 μmol mol−1 CO2. The root to total weight ratio was unaffected by differences in temperature at 551 μmol mol−1CO2, but was reduced by cooler temperatures at 348 μmol mol−1 CO2. At a given thermal time from sowing, CO2 enrichment increased the leaf area per plant, particularly during early root growth, primarily as a result of an increase in the rate of leaf area expansion, and not an increase in leaf number.
    Type of Medium: Electronic Resource
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