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  • 1
    Electronic Resource
    Electronic Resource
    Evolution of the transient vibrational spectrum following short-pulse excitation (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 1180-1184 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100366a033
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  • 2
    Electronic Resource
    Electronic Resource
    The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3124-3129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs has been investigated. This contact scheme has been shown to form planar contact interfaces with contact resistivities less than 1 × 10−6 Ω cm2. This investigation demonstrates that the contact resistivity can be modeled by a sum of two components in series: (i) a contact resistivity due to the metal-GaAs interface and (ii) a contact resistivity due to the high-low junction formed between the highly doped regrown GaAs layer and the substrate. For degenerately doped samples (4.5 × 1019 cm−3), the contact resistivity is nearly independent of the temperature from 300 to about 30 K, indicating that the dominant resistivity is that across the metal-semiconductor tunneling barrier. For samples with lower doping concentrations (≤ 1.5 × 1018 cm−3), the contact resistivity increases with decreasing temperature, suggesting the dominance of the contact resistivity due to the high-low junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348579
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  • 3
    Electronic Resource
    Electronic Resource
    Nonspiking ohmic contact to p-GaAs by solid-phase regrowth (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5714-5718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-resistance and nonspiking contact consisting of a layered structure of Si/Ni(Mg) on p-GaAs is formed by solid-phase regrowth. Backside secondary-ion mass spectrometry and cross-sectional transmission electron microscopy show an initial reaction between Ni and GaAs to form NixGaAs which is later decomposed to form NiSi by reacting with the Si overlayer. This reaction leads to the solid-phase epitaxial regrowth of a p+ -GaAs layer doped with Mg. The total consumption of substrate is limited to a few hundred angstroms. The as-formed ohmic contact structure is uniform and planar with an average specific contact resistivity of ∼7×10−7 Ω cm2 on substrates doped to 8×1018 cm−3. The thermal stability of this contact scheme is also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346990
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Theoretical and experimental study of dissolution of inhomogeneities formed during spinodal decomposition in polymer mixtures (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 5782-5793 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Dissolution (mixing or melting) of inhomogeneities formed during spinodal decomposition in binary polymer mixtures is studied both experimentally and theoretically. The details of the dissolution experiment with time-resolved light scattering on polystyrene/poly(vinylmethylether) are presented. The theoretical approach differs from that of Langer, Bar-on, and Miller in the way the fluctuations are treated in the nonlinear theory, and in the details of the calculations arising from the chain connectivity (polymer effect). The effect of mode coupling arising from nonlinearity on the relaxation rate is discussed. It is found both experimentally and theoretically that the wave number corresponding to peak intensity decreases in time asymptotically following a t−0.5 power law.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463737
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  • 5
    Electronic Resource
    Electronic Resource
    Deviation from mean-field behavior in a low molecular weight critical polymer blend (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 9133-9137 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A deviation from mean-field behavior is observed in the static susceptibility and correlation length measured with small angle neutron scattering as a function of temperature near the phase boundary of a relatively low molecular weight critical polymer mixture. The possibility of a fluctuation influenced crossover from mean-field to nonmean-field behavior is considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462222
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  • 6
    Electronic Resource
    Electronic Resource
    Phase separation in deuterated polycarbonate/poly(methylmethacrylate) blend near glass transition temperature (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 2095-2100 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Early stage of spinodal decomposition kinetics of deuterated polycarbonate/poly(methylmethacrylate) blend has been studied by the time resolved small angle neutron scattering measurements. A trapped miscible state was obtained through fast solution casting of film specimens. Time dependence of the structure factor, S(q,t), was measured after the specimen temperature was quickly increased to a final temperature which is above its glass transition temperature, Tg. Thus, the early stage of spinodal decomposition kinetics has been observed starting from the dimension (q−1) comparable to the single chain radius of gyration, Rg, for a binary polymer mixture. The results provide an unequivocal quantitative measure of the virtual structure factor, S(q,∞); the relationship of qm and qc through rate of growth, Cahn-plot analysis, and singularity in S(q,∞); the growth of fluctuation of qRg〈1 and intrachain relaxation of qRg(approximately-greater-than)1; and also a clear proof of the Cahn–Hillard–Cook theory in the early stage of spinodal decomposition of a mean-field system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465275
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  • 7
    Electronic Resource
    Electronic Resource
    Thermodynamic interactions and correlations in mixtures of two homopolymers and a block copolymer by small angle neutron scattering (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 10011-10020 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Thermodynamic interactions in mixtures of two homopolymers and a block copolymer were obtained from small-angle neutron scattering (SANS) measurements. Experimental SANS profiles from homogeneous, ternary mixtures of model polyolefins—poly(ethyl butylene)/poly(methyl butylene)/poly(methyl butylene)-b-poly(ethyl butylene)—were compared with theoretical predictions based on the multicomponent random phase approximation (RPA). The polymers were nearly monodisperse and were synthesized by saturating the double bonds in anionically synthesized polydienes with H2 and D2, thus yielding polyolefins with neutron scattering contrast. The theoretical scattering profiles depend on 16 structural parameters and six Flory–Huggins interaction parameters χ, all of which were obtained independently. The χ parameters were obtained from SANS measurements on binary poly(ethyl butylene)/poly(methyl butylene) blends. The SANS profiles obtained from the ternary blends were in quantitative agreement with theoretical predictions over the observable q range (0.01–0.08 A(ring)−1) and over a wide range of block copolymer concentrations (from 10 to 80 vol. % copolymer). This suggests that the measured χ parameters are consistent with the original ideas of Flory and Huggins that χ is a measure of monomer–monomer interactions, and is thus independent of block copolymer concentration. Partial structure factors, related to correlations in the concentration of individual components, were examined by selective labeling and were also found to be in quantitative agreement with the predictions of the multicomponent RPA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465505
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  • 8
    Electronic Resource
    Electronic Resource
    Thermally stable and nonspiking Pd/Sb(Mn) ohmic contact to p-GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1617-1619 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thermally stable, nonspiking ohmic contact to p-GaAs has been developed based on the solid-phase regrowth mechanism. The contact metallization consists of a layered structure of Pd(250 A(ring))/Sb(100 A(ring))/Mn(10 A(ring))/Pd(250 A(ring))/p-GaAs. Thermal annealing of the contact between 300 and 600 °C for 10 s yields contact resistivities in the range of low 10−6 Ω cm2 on substrates doped to 2.5×1018 cm−3. A contact resistivity of 4.5×10−7 Ω cm2 can be obtained after annealing at 500 °C on samples with a doping concentration of 4.5×1019 cm−3. The contact metallization remains uniform in thickness and the contact interface is flat after the contact is formed. The consumption of the substrate is limited to less than a hundred angstroms. Contact resistivities are stable at 400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105143
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  • 9
    Electronic Resource
    Electronic Resource
    Compositional disordering by solid phase regrowth (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 625-627 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The principle of solid phase regrowth (SPR)has been used to induce compositional disordering in AlGaAs/GaAs superlattice structures in the temperature range of 400 °C (30 min)–650 °C (30 s) as compared to the conventional diffusion method in the temperature range of 600–850 °C for hours. The SPR process is simple to implement, requiring only thin-film deposition and annealing. The crystal quality as well as the photoluminescence signals emerging from the disordered region generally improve with increasing processing temperature. The simplicity, the low process temperature, and the short process duration of the SPR technique are distinct advantages for optoelectronic applications, especially for self-aligned devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104549
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  • 10
    Electronic Resource
    Electronic Resource
    Asymmetric reduction of 20-steroidal ketone: synthesis of corticosteroid derivatives containing the 20.alpha.-ol 21-al side chain (1982)
    s.l. : American Chemical Society
    The @journal of organic chemistry 47 (1982), S. 1580-1584 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00347a045
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