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  • 1
    Electronic Resource
    Electronic Resource
    Growth of YBa2Cu3Oy single crystals from a mixture of YBa2Cu3Oy and Ag2O (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3580-3582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of the superconductor YBa2Cu3Oy have been grown from a mixture of solid phase YBa2Cu3Oy and liquid phase silver. Crystals with a thickness of up to 1 mm along the c axis can be obtained when the mixture is soaked at 1005 °C for more than 8 h. Silver melt enhances the peritectic partial melting of the YBa2Cu3Oy solid phase, and induces the solution and reprecipitation process during sintering at 1005 °C. Stacked plate-like YBa2Cu3Oy grains grow through a coalescence process. Crystals are heavily twinned after 20 h of O2 annealing at 500 °C. They exhibit a sharp superconducting transition with an onset temperature of 93 K in zero field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352915
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  • 2
    Electronic Resource
    Electronic Resource
    Properties of InxGa1−xAs-GaAs strained-layer quantum-well-heterostructure injection lasers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 33-38 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some of the properties of InxGa1−xAs-GaAs strained-layer quantum-well-heterostructure (SL-QWH) injection lasers are described. The laser structures are grown by molecular beam epitaxy on n+ GaAs substrates. Following the growth of a 0.5-μm n+ GaAs buffer layer, a 2-μm Al0.45Ga0.55As n-type cladding layer is grown. Next an undoped active region is grown, consisting of ∼1600 A(ring) of GaAs with three ∼40-A(ring) In0.35Ga0.65As quantum wells separated by two ∼30-A(ring) GaAs barrier layers. Following the active region, a 2-μm Al0.45Ga0.65As p-type cladding layer and a 0.5-μm p+ GaAs cap layer are grown. Broad-area SL-QWH lasers operate under pulsed conditions at room temperature with threshold current densities as low as 465 A/cm2. The operating wavelength is near 1 μm. Lasers have operated for up to 1000 h with less than 25% increase in current density to maintain a constant output of 2 mW/facet. Data are also presented describing the temperature dependence of threshold current density. Values of T0 between 80 and 103 K are observed near room temperature, indicating that these SL-QWH lasers are somewhat more sensitive to temperature changes than conventional laser structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335391
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  • 3
    Electronic Resource
    Electronic Resource
    Cu spin reorientation in Tl(BaSr)PrCu2O7 : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6568-6570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Cu spins in TlBa2PrCu2O7 order at TN≈370 K with a spin structure that is collinear and is characterized by the {1/21/21} wave vector, where the nearest neighbor spins are aligned antiparallel along all three crystallographic directions. If 50% of the Ba atoms are randomly replaced by the smaller Sr atoms to form Tl(BaSr)PrCu2O7, the TN of the Cu spins reduces to 350 K but the magnetic structure that forms below TN is the same. However, at T≈20 K the Cu spins undergo a change in structure, and the spin arrangement is then characterized by the {1/21/21/2} wave vector below T≈12 K. The ground state spin structure of the Cu ions in Tl(BaSr)PrCu2O7 is hence noncollinear, where the spin directions of the nearest neighbor Cu ions in the ab plane remain collinear and antiparallel while along the c axis they are orthogonal. These results demonstrate that the atoms in the BaO layers are also actively participating in the coupling between the Cu ions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361883
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  • 4
    Electronic Resource
    Electronic Resource
    Long-wavelength infrared detection in a Kastalsky-type superlattice structure (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 503-505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first successful demonstration of long-wavelength infrared (LWIR) detection with a Kastalsky-type AlGaAs/GaAs superlattice structure is reported. The experimental response band of the detector is centered near 10 μm in very good agreement with the theoretical response band provided that electron-electron interactions are taken into account. The detector operates at significantly lower bias voltage than photoconductive multiple quantum well LWIR detectors. This could lead to important advantages in applications to photovoltaic detector arrays. The response at 83 K is about 50% of the response at 24 K. Optimization of the response, operating temperature, or bias voltage has not been carried out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103634
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  • 5
    Electronic Resource
    Electronic Resource
    Exchange interactions in quantum well subbands (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1931-1933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that exchange interactions in the two-dimensional electron gas in quantum wells could cause observable effects on subband energies and intersubband transition energies. In the case of doped quantum wells, the intrasubband exchange interaction can produce an energy shift which is substantially larger than the direct Coulomb energy shift. Theoretical estimates of such shifts are compared with experimental measurements of the infrared photoconductivity of multiple quantum well AlGaAs/GaAs structures with wells doped at about 1018 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100327
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: Exchange interactions in quantum well subbands [Appl. Phys. Lett. 53, 1931 (1988)] (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 206-206 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102380
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  • 7
    Electronic Resource
    Electronic Resource
    Growth and characterization of InP epilayers on ZnSe-coated Si substrates by low-pressure metalorganic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 107-109 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of InP on ZnSe-coated Si substrates by low-pressure metalorganic vapor phase epitaxy is reported for the first time. Single-crystal InP epilayers with specular surfaces can be obtained. The ZnSe buffer layer, which is evaporated onto the Si substrate in another furnace, is effective in reducing the magnitude of strain in the InP layer. The best room-temperature electron mobility of the undoped InP epilayer can reach 3100 cm2 /(V s) with a carrier concentration of 1.5×1015 cm−3 . It was found that the InP electron mobility is critically dependent on the ZnSe buffer-layer thickness. The efficient photoluminescence compared with that of InP homoepitaxy indicates that the InP heteroepilayer is of high optical quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100383
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  • 8
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of ZnSe on (111) Si by low-pressure metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4241-4243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epitaxial layers were successfully grown on (111) Si substrates by low-pressure metalorganic chemical vapor deposition. It is not necessary that the reactant inlet tubes project to near the substrates. From x-ray and scanning electron microscopy examinations, single-crystalline ZnSe epilayers with mirrorlike surfaces can be obtained. The carrier concentration profile shows that the carrier distribution in the epilayer is very uniform. The electron mobility of the epilayer at room temperature is 280 cm2 /V s. The efficient 77-K photoluminescence indicates that the ZnSe epilayers are of good quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341292
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial CaF2 on GaAs(100) after ambient transfer with arsenic overlayer (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1655-1656 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using an amorphous overlayer of arsenic, it is shown that a GaAs(100) wafer, with a layer of GaAs grown on it by molecular-beam epitaxy, can be satisfactorily transferred in the laboratory atmosphere from one ultrahigh vacuum chamber to another. The clean GaAs(100) surface is retrieved in the second chamber by low-temperature (350 °C) evaporation of the arsenic overlayer. An epitaxial layer of CaF2 was grown successfully on a smooth GaAs surface retrieved in this manner. This technique offers an opportunity to investigate GaAs/epifluoride/GaAs structures by transferring samples between the GaAs growth chamber and the fluoride growth chamber without subjecting them to a higher temperature (600 °C) cleaning process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338056
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  • 10
    Electronic Resource
    Electronic Resource
    Growth and characterization of lattice-matched CaxSr1−xF2 on GaAs(100) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 875-878 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth and characterization of the structural, morphological, interfacial, and electrical properties of lattice-matched Ca0.43Sr0.57F2 on GaAs(100) are reported here. The ∼200 nm films were grown at 500 °C on the GaAs(100) substrates that had been cleaned by annealing at 600 °C. Nomarski optical microscopy, transmission electron microscopy (TEM), scanning electron microscopy, and reflection high-energy electron diffraction results showed that the films were smooth and crackfree, with good crystalline quality. TEM showed evidence of two general types of extended defects in the film which occur at or near the film/substrate interface region. Film resistivity was found to be (3.6±0.75)×1013 Ω cm, and the breakdown field strength was (5.8±1.4)×105 V/cm. However, the breakdown in this case represented a nondestructive conduction process, as opposed to the catastrophic and irreversible change observed in previous studies. The dielectric constant of the films was measured to be 7.43±0.22. Capacitance-voltage measurements indicated that there could be a high density of surface states at the interface that pin the Fermi level within the gap region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339692
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