ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We provide evidence of shrinking of Shockley-type stacking faults (SSFs) in the SiCepitaxial layer by high temperature annealing. Photoluminescence (PL) mapping in combination withhigh-power laser irradiation makes it possible to investigate the formation of SSFs, which lie betweena pair of partial dislocations formed by dissociation of a basal plane dislocation (BPD), withoutfabrication of pin diodes. Using this technique, we investigated the annealing effect on SSFs.Comparing before and after annealing at 600ºC for 10 min, it became obvious that high-temperatureannealing results in shrinking of the faulted area of the SSFs. The SSFs form into the same features asthose before annealing when high-power laser irradiation is performed again on the same area. Thisresult shows that the faulted area of SSFs shrinks by 600ºC annealing but the nuclei of SSFs (BPDs)do not disappear
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.375.pdf
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