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  • 1
    Electronic Resource
    Electronic Resource
    Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type Si1−xGex layers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6890-6894 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height on n-type Si1−xGex films has been studied as a function of the composition and strain relaxation. We have used electrical I–V measurements complemented by high-resolution x-ray measurements for assessment of the relaxation in the epilayers. In addition, Schottky barrier height on n-Si1−xGex films has also been investigated as a function of the metal work function. Our results shows that the barrier height on n-type Si1−xGex does not depend on either the Ge content or strain relaxation, but is sensitive to the metal work function. The experimental results indicate that the Fermi level is pinned to the conduction band and provide also the evidence that the pinning position of the Fermi level is metal work function dependent. This pinning behavior in metal Si1−xGex is opposed to that observed in metal/Si contacts, were the Fermi level is pinned either to the valence or conduction band depending on the metal work function. These findings regarding the relaxation independent barrier height on n-type Si1−xGex are suggesting only the movement of the valence band of Si1−xGex/Si heterostructure upon relaxation as expected. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371768
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  • 2
    Electronic Resource
    Electronic Resource
    CoSi2/Si1−xGex/Si(001) heterostructures formed through different reaction routes: Silicidation-induced strain relaxation, defect formation, and interlayer diffusion (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7063-7069 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and microchemistry of CoSi2/Si1−xGex/Si(001) heterostructures, in which the Si1−xGex layers were grown by molecular-beam epitaxy (MBE) and the silicides formed by different postdeposition reaction paths, were investigated using a combination of high-resolution cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, and secondary-ion-mass spectrometry. In two of the three sample configurations investigated, Co was deposited either (S1) directly on a strained Si1−xGex layer or (S2) on a sacrificial MBE Si overlayer on Si0.9Ge0.1. In the third sample configuration (S3) Si1−xGex was grown on a Si(001) substrate containing a buried ion-implanted CoSi2 layer. Only in sample configuration S2 was it possible to obtain a fully strained nearly defect-free CoSi2/Si0.9Ge0.1 structure. A high density of threading dislocations, corresponding to ≈60% relaxation at the Si0.9Ge0.1/Si interface, was observed in S1 while S3, in addition to the dislocations, exhibited a pronounced faceting at the CoSi2/Si interface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360411
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence of pseudomorphic SiGe formed by 74Ge+ ion implantation in the overlayer of silicon-on-insulator material (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3047-3049 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metastable SiGe-on-insulator structure is realized by a high-dose 74Ge+ ion implantation in the overlayer of silicon-on-insulator followed by solid phase epitaxial regrowth. Studies of the optical properties of the germanium-implanted and post-implantation annealed layers with 18% peak germanium concentration were carried out using photoluminescence (PL) spectroscopy. The electrical integrity of the strained layer was qualitatively inferred from the pseudo-mosfet characterization technique. The PL results show that the broadband (BB) emission related to germanium implantation damage can be completely eliminated by post-implantation thermal treatment. PL spectra and measured transconductance of the sample heat-treated at 500 °C indicate conclusively that a defect-free strained SiGe layer has been formed. However, samples heat-treated at higher temperatures show degradation in the charge carrier lifetime, a new BB emission with 0.816 eV peak energy and an emergence of defect related emission at 0.870 eV for samples annealed at and above 900 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121536
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  • 4
    Electronic Resource
    Electronic Resource
    Electron mobility enhancement in Si using doubly δ-doped layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1842-1844 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large enhancements in the electron mobility are reported for structures containing a pair of closely spaced Sb δ-doped layers in Si. The room-temperature mobility is enhanced by a factor of 2 compared to corresponding uniformly doped layers of singly δ-doped structures. Even higher mobilities were obtained by using a Schottky gate on top and applying a voltage to adjust the potential well. With an effective gate voltage of ∼−0.3 V the mobility was 1200 cm2 V−1 s−1 at room temperature, which is an enhancement by a factor of 10 relative to the layer with equivalent bulk doping concentration. The high mobility is attributed to wave functions with nodes at the δ-doped layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111773
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  • 5
    Electronic Resource
    Electronic Resource
    Strain characterization of CoSi2/n-Si0.9Ge0.1/p-Si heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 440-442 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the structural characterization of CoSi2/n-Si0.9Ge0.1/p-Si heterostructures. Silicon molecular beam epitaxy is combined with Co sputtering to obtain these structures. The strain in the Si1−xGex is investigated after the formation of the CoSi2 by using high-resolution x-ray diffraction mapping in reciprocal space and cross-sectional transmission electron microscopy. The results show that in order to keep the strain in Si1−xGex unaffected, a sacrificial Si layer is needed. It was possible to obtain transistor action, but with low-current gain (β).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111122
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  • 6
    Electronic Resource
    Electronic Resource
    Correlation between barrier height and band offsets in metal/Si1−xGex/Si heterostructures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3920-3922 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The variation of barrier height with the band gap in the metal/heterojunction systems is related to how the Fermi level position varies with respect to band edges. If the Fermi level is pinned by the interface states its movement will also correspond to the movement of the neutrality level at the interface. Metal/Si1−xGex/Si heterostructures (0≤x≤0.24) for both n- and p-type substrates were studied to understand the relation between Schottky barrier, Fermi level movement, and the band gap variations. It was shown that a correlation exists between Schottky barrier height variation and band-offset values ΔEc and ΔEv. For n-type substrate, measured barrier height differences are almost the same as the band offsets in the conduction band ΔEc. For p-type substrates they were found to be slightly smaller than ΔEv. This shows that Fermi level position relative to the conduction band edge does not change with band gap variation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122936
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  • 7
    Electronic Resource
    Electronic Resource
    1/f noise characterization of Ir/p-Si and Ir/p-Si1−xGex low Schottky barrier junctions (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2382-2384 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical noise properties of Ir/p-Si and Ir/p-Si1−xGex (x=0.14) Schottky junctions have been studied. The 1/f noise measurements were performed under forward bias over a wide temperature and frequency ranges. The effect of annealing on the noise properties of these junctions was also investigated. Annealed junction shows higher noise level. This was attributed to the defects formation at the metal/semiconductor interface. From the temperature dependence of the 1/f noise power density, an optimum operating temperature for as deposited and annealed junctions was found. The Hooge parameter, αH, is derived from the experimental data over a wide range of temperature for the deposited junctions. Values of 2.26×10−6 and 1.78×10−6 were obtained at room temperature for Ir/p-Si and Ir/p-Si1−xGex, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117644
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  • 8
    Electronic Resource
    Electronic Resource
    Metal–semiconductor junctions on p-type strained Si1−xGex layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1084-1086 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of Schottky junctions on high-quality p-type strained Si1−xGex layers have been studied for Ge fractions 0≤x≤0.24. A multicrystal high-resolution x-ray diffractometer was used to investigate the sample's quality and the strain state and to accurately determine the Ge fraction in the fabricated devices. Several different metals, having a wide range of barrier heights, were used to reach conclusions on the variation of barrier height with the Ge content in the grown strained Si1−xGex layers. It has been found that the Schottky barrier height decreases with increasing Ge fraction in the Si1−xGex layer for the different metals investigated. The change in the barrier height with x has been found to be directly correlated to the valence band discontinuity in the Si/Si1−xGex heterojunction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115720
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