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  • 1
    Electronic Resource
    Electronic Resource
    Deposition of metallic films by laser ablation of oxides in hydrogen atmosphere (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6418-6421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed laser ablation from oxide surfaces in hydrogen atmosphere is shown to be a powerful new method for deposition of high quality metal films. Specifically, the cases of ablation from CuO and α-Fe2O3 are studied. By examining the effects of hydrogen pressure, laser energy density, and the substrate temperature on the nature of the deposited films, optimum parameters have been identified for realization of high quality films of metallic Cu and Fe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355144
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  • 2
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of stoichiometric LiNbO3 thin films by using O2 and Ar gas mixtures as ambients (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5718-5720 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stoichiometric thin films of LiNbO3 have been deposited on (100) silicon by a pulsed excimer laser deposition technique. By studying several cases of depositions in vacuum, oxygen, and argon, as well as oxygen-argon mixture as ambients, it is brought out that the desired stoichiometry in the film can be attained only by having an appropriate oxygen-argon mixture during deposition. The films have been characterized by x-ray diffraction, infrared transmission, and spectroscopic ellipsometry techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350509
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  • 3
    Electronic Resource
    Electronic Resource
    Current transport in Y1Ba2Cu3−xMxO7−δ (M≡Fe, Zn) epitaxial thin films (abstract) : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5763-5763 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical current density (Jc) and the nature of its temperature dependence have been studied for epitaxial thin films of Y1Ba2Cu3−xMxO7−δ (M≡Fe, Zn). These films were deposited on (100) oriented Y-stabilized ZrO2 substrates by pulsed excimer laser ablation and were characterized by four probe resistivity, x-ray diffraction, and scanning electron microscopy. The critical currents were measured on a 20 μm wide and 200 μm long laser patterned microbridges. In addition to their direct interaction with the superconducting state the impurities also lead to changes in the growth features of the films which in turn affect their critical properties. The problems which have been addressed in this context of transport property systematics include effect of impurity scattering on Cooper pair condensation amplitude, the effects of impurity induced twin boundary layers on transport and the flux pinning effects at such planar defect centers, as well as the growth related grain texture features.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350154
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  • 4
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of diamondlike hydrogenated amorphous carbon films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5648-5652 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamondlike hydrogenated amorphous carbon films have been deposited for the first time by pulsed ruby laser deposition (PLD) from pyrolytic graphite in hydrogen partial pressure. A hint in the IR absorption spectrum at 2920 cm−1 provides an evidence for the incorporation of hydrogen in the film. Raman scattering (RS) measurements display a large downward shift in the position of the intense G line to 1500 cm−1, whereas the relatively weak D line is observed near 1350 cm−1 along with a strong enhancement in RS near 1210 and 800 cm−1. These features are attributed to an increased proportion of tetrahedral (sp3) character in the amorphous carbon network due to formation of hydrogen-related complexes. Additional support for this proposal is sought from the enhanced band gap of the PLD a-C:H films compared to those of unhydrogenated PLD a-C films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346978
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  • 5
    Electronic Resource
    Electronic Resource
    Deposition of copper oxide thin films on different substrates by pulsed excimer laser ablation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3765-3769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stoichiometric films of cupric and cuprous oxide are deposited on Si, MgO, and Y-ZrO2 substrates by pulsed excimer laser ablation technique. It is found that the equilibrium phase diagram based considerations dictate the phase formation. The films are characterized by small-angle x-ray diffraction, infrared, and UV-visible spectroscopies and Rutherford backscattering spectroscopy. It is shown that epitaxy of Cu2O films can be realized on single crystal MgO (100) substrates and the corresponding film resistivity is of the order of 40–60 Ω cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352271
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  • 6
    Electronic Resource
    Electronic Resource
    Ion-beam induced structural transformations in hydrogenated microcrystalline silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3773-3779 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-implantation induced structural transformations are investigated in hydrogenated microcrystalline silicon (μc-Si:H). Ion-beam processing of the μc-Si:H samples was done using 160 keV Ar+ ions at different dose values, in the range of 1013–1016 ions/cm2. Ion-beam induced transformation from the microcrystalline-to-amorphous phase was examined with the help of x-ray diffraction (XRD) and laser-Raman spectroscopic techniques. The conductivity changes in the samples were also monitored as a function of ion dose. It is observed that at a specific threshold ion dose value, the conductivity decreases by more than an order of magnitude. There are concomitant changes in XRD and laser Raman features. Furthermore the results clearly indicate grain growth under ion-beam irradiation at high dose values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350888
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  • 7
    Electronic Resource
    Electronic Resource
    Columnar defect induced phase transformation in epitaxial La0.7Ca0.3MnO3 films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4210-4215 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial La0.7Ca0.3MnO3 thin films on the SrTiO3(100) surface have been irradiated with 250 MeV Ag17+ ions at different nominal fluence values in the range of 5×1010–4×1011 ions/cm2, resulting in columnar defects. At low fluences these defects cause changes in material properties that are small and scale linearly with dosage. Above a threshold fluence value ∼3×1011 ions/cm2 dramatic changes are observed, including an order of magnitude increase in the resistivity and 50 K drop in the Curie temperature. Transmission electron microscopy measurements show that the changes are associated with a phase transformation of the undamaged region between the columnar defects. The transformed phase has a diffraction pattern very similar to that seen in charge-ordered La0.5Ca0.5MnO3. We propose that above a critical level of ion damage, strains caused by the presence of the columnar defects induce a charge-ordering phase transition that causes the observed dramatic changes in physical properties. We speculate that a conceptually similar surface-induced charge ordering may be responsible for the "dead layer" observed in very thin strained films, and the dramatic changes in optical properties induced by polishing, and that an impurity-induced charge ordering causes the extreme sensitivity of properties to lattice substitution. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373054
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  • 8
    Electronic Resource
    Electronic Resource
    Response to an electric field of Nd0.7Sr0.3MnO3 films in a MOSFET configuration (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4545-4545 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of an electric field on GMR oxide films was studied in a MOSFET configuration where the gate dielectric was a layer of SrTiO3 epitaxially grown on an underlying layer of the manganate which served as the source/drain. The response of the manganate channel was studied for different gate voltages. The following significant features were observed. The peak resistance temperature shifted to lower temperature for both polarities of the field. The resistance change varied quadratically with the field indicating the dominance of strain or polarization effects. In dynamical studies of the system using the gate voltage as an excitation the system showed anomalous slowing down near the peak of the resistivity. These results are understood on the basis of a stress effect on the film due to electro-elastic effects in the SrTiO3 layer, which introduces a tensile stress in the manganate layer upon the application of a gate voltage. The anomalous slowing down of the system near the ferromagnetic phase transition suggests a strong coupling between the spins, transport and structural distortions in the system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361718
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  • 9
    Electronic Resource
    Electronic Resource
    Role of lattice distortions in the transport property of R0.7Me0.3MnO3 (R=Pr,Nd,La and Me=Ba,Sr,Ca) (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4552-4552 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There are different models which to try to explain the transport properties of the manganese oxides in terms of magnetic polarons, Zener double exchange and Jahn-Teller distortions of the lattice which is temperature dependent. Using Rutherford backscattering techniques (2–3 MeV He ions) we are measuring the presence of lattice distortions by studying the angular scans in the channeling mode. The angular widths (FWHM) can be used to extract both dynamic and static displacements of the atoms from their equilibrium sites. The technique is extremely powerful in the sense that local uncorrected displacements as small as 0.01 A(ring) from the equilibrium position can be detected. The extraction of the physics from the data is relatively straight forward compared to other techniques such as XRD or neturon scattering. Using a variable temperature backscattering system at our center (one of three or four systems around the world) the angular width (FWHM) is found to exhibit a dramatic change with temperature increasing with decreasing temperature showing a possible correlation with both the transport and magnetic properties. The results suggest a decrease in the lattice disorder with reduced temperature far in excess of what one would predict on the basis of a simple Debye behavior. The reduction in the lattice disorder correlates very well with the resistance vs temperature dependence. A variety of manganese oxide epitaxial thin films grown by pulsed laser deposition have been studied and the data suggests a role for structural distortions in any mechanism to explain the transport properties of these materials. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361720
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  • 10
    Electronic Resource
    Electronic Resource
    Ion beam mixing at the Fe2O3/Al2O3 interface (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2228-2233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Fe2O3 layers (44 and 55 nm) were deposited by pulsed excimer laser ablation on single-crystal alumina (α-Al2O3) substrates heated at 675 °C. The ion beam mixing of these α-Fe2O3/α-Al2O3 couples was carried out using 300 keV Kr3+ ions at a fluence of 2×1016 ions/cm2. The mixing effect was followed by Rutherford backscattering spectrometry (RBS), conversion electron Mössbauer spectroscopy, and grazing incidence x-ray diffraction method. RBS spectra do not show any evidence of mixing at the interface, whereas the data obtained with the two other techniques display phases like oxygen deficient Fe3O4, Fe3−yAlyO4, and Fe1+xAl2−xO4. For this last phase, x is determined as being equal to about 0.5. It is shown that ion beam mixing is more efficient for the thinner Fe2O3 layer, in accordance with the projected range of the Kr3+ ions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363115
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