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  • 1
    Electronic Resource
    Electronic Resource
    Nitrogen donors in 4H-silicon carbide (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3332-3338 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall-effect and infrared-absorption measurements are performed on n-type 4H-SiC samples to investigate the energy positions of the ground state and the excited states of the nitrogen donor in the 4H polytype of silicon carbide. Two electrically active levels (Hall effect) and three series of absorption lines (infrared spectra) are assigned to two nitrogen donor species which substitute on the two inequivalent lattice sites (h,k) in 4H-SiC. Valley-orbit splitting of the ground-state level of the nitrogen donors on hexagonal sites (h) is found to be equal to ΔEvo(h)=7.6 meV. It is shown that the energy position of excited states of both nitrogen donors can be calculated by the effective-mass approximation by assuming anisotropic effective masses m⊥=0.18m0 and m(parallel)=0.22m0. The influence of the two inequivalent lattice sites on the values of ionization energy and valley orbit splitting of the nitrogen donor ground-state levels is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352983
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical, magnetic circular dichroism and Raman spectroscopic investigations on the EK2 double acceptor (78/203 meV) in GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1454-1462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of liquid encapsulated Czochralski grown, Ga-rich (melt composed of 55% Ga and 45% As), p-type GaAs were studied by the Hall effect, capacitance-voltage measurements, magnetic circular dichroism, optically detected electron spin resonance, deep level transient spectroscopy (DLTS), and Raman spectroscopy. Two levels with ionization energies of 78 and 203 meV above the valence band edge were examined and fitted to the singly and doubly charged ground states of a double acceptor which is designated an EK2 center. The Raman scattering cross sections for electronic excitations were determined from the defect concentrations measured by DLTS. The EK2 center is electrically passivated via a remote microwave hydrogen plasma technique. It can be reactivated by heat treatments with an activation energy of Ea=1.4 eV. The concentrations of the two levels were equal to each other in four as-grown samples, in samples following passivation, and at all stages during the subsequent reactivation. The observations are inconsistent with previous suggestions that the levels are due to two separate defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347287
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  • 3
    Electronic Resource
    Electronic Resource
    Hall effect and infrared absorption measurements on nitrogen donors in 6H-silicon carbide (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3708-3713 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall effect and infrared absorption measurements of n-type silicon carbide of the 6H polytype are employed to investigate the energy position of the ground state and excited states of the nitrogen donor. A donor model is proposed that assigns four series of absorption lines to electronic transitions of three donor species residing at three inequivalent lattice sites (h,k1,k2). A valley-orbit splitting of 12.6 meV is determined for donors on the hexagonal site h. For 2p0, 2p±, 3p0, and 3p± excited states, the effective-mass approximation is found to hold within experimental errors assuming a transverse and longitudinal effective electron mass of m⊥=(0.24±0.01) m0 and m(parallel)=(0.34±0.02) m0, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352318
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  • 4
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition and characterization of undoped and nitrogen-doped single crystalline 6H-SiC (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5437-5442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial growth of single crystalline 6H-SiC layers is performed by chemical vapor deposition (CVD). 6H-SiC substrates are grown by a sublimation technique. They have vicinal surfaces inclined 1.5° to 2° from the (0001) plane towards the [11¯00] direction. We report CVD growth at 1600 °C in the hydrogen-silane-propane gas system with nitrogen as a dopant. High quality films are achieved with growth rates of about 1.8 μm per hour. The layers are examined by optical microscopy, infrared reflection, photoluminescence, and Rutherford backscattering. For electrical characterization capacitance-voltage and Hall measurements are performed. Unintentionally doped layers have donor concentrations in the upper 1015 cm−3 range. Electron mobilities of 370 cm2/V s at room temperature and about 104 cm2/V s at 45 K are observed. To the authors' knowledge this is the highest mobility so far reported for 6H silicon carbide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351985
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  • 5
    Electronic Resource
    Electronic Resource
    Phosphorus-related donors in 6H-SiC generated by ion implantation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3739-3743 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum-doped 6H-SiC epilayers were implanted with phosphorus and subsequently annealed in a temperature range from 1400 to 1700 °C. The annealing behavior of implanted phosphorus atoms was studied by the Hall effect, admittance spectroscopy, and photoluminescence. Phosphorus acts as a shallow donor. Two ionization energies of (80±5) meV and (110±5) meV are determined, which are assigned to phosphorus atoms residing at hexagonal and cubic lattice sites, respectively. Assuming first-order kinetics, the annealing process results in an activation energy of the phosphorus donors of 2.5 eV. A set of four lines at a wavelength of about 420/421 nm is observed in the low temperature photoluminescence spectra; the intensity of these lines increases in parallel with the electrical activation of phosphorus donors by raising the annealing temperature. It is proposed that these lines are phosphorus-related. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363325
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  • 6
    Electronic Resource
    Electronic Resource
    Band offsets and electronic structure of SiC/SiO2 interfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3108-3114 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of SiC/SiO2 interfaces was studied for different SiC polytypes (3C, 4H, 6H, 15R) using internal photoemission of electrons from the semiconductor into the oxide. The top of the SiC valence band is located 6 eV below the oxide conduction band edge in all the investigated polytypes, while the conduction band offset at the interface depends on the band gap of the particular SiC polytype. In the energy range up to 1.5 eV above the top of the SiC valence band, interface states were found. Their electron spectrum is similar to that of sp2-bonded carbon clusters in diamond-like a-C:H films suggesting the presence of elemental carbon at the SiC/SiO2 interfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361254
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of 6H and 4H silicon carbide single crystals by the modified Lely process utilizing a dual-seed crystal method (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3728-3730 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of polarity on the SiC crystal growth has been demonstrated using a dual-seed technique to grow on both the C- and Si-face seed simultaneously. For the investigated range of growth conditions, 4H-SiC crystals were grown on the C-face of 6H-SiC seed crystals with on-axis orientation, when the growth rate exceeded 1.2 g/h. We were never able to grow 4H-SiC on the Si- face of 6H- or 4H-SiC seed crystals under these growth conditions. The incorporation of nitrogen is shown to be 2–3 times higher in crystals grown on the C-face than on the Si-face, and is independent of both polytype and 8° off-axis orientation. The addition of more than 15% silicon powder to the SiC sublimation source resulted in polycrystalline growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117203
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  • 8
    Electronic Resource
    Electronic Resource
    New near-infrared defect luminescence in GaN doped with vanadium by ion implantation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 203-204 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a new photoluminescence (PL) spectrum of wurzite-type GaN intentionally doped with vanadium by ion implantation. A group of several broad intense near-infrared PL lines is observed at 820 meV. The whole PL spectrum can be observed up to room temperature. The samples were grown by low-pressure metalorganic vapor phase epitaxy on sapphire substrate. After ion implantation the samples were annealed under growth conditions at 920 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116460
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  • 9
    Electronic Resource
    Electronic Resource
    Hydrogen neutralization of chalcogen double donors in silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 451-453 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen neutralization of chalcogen (S, Se, and Te) double-donor centers in single-crystal silicon is demonstrated with deep level transient spectroscopy. The deep-donor chalcogen concentration can be reduced by greater than a factor of 100, while in the same samples the phosphorus shallow-donor concentration decreases by only a small percentage. Both electronic levels of the double donors were fully removed by hydrogenation and recovered with an anneal at 500 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98419
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  • 10
    Electronic Resource
    Electronic Resource
    Fast computer-controlled deep level transient spectroscopy system for versatile applications in semiconductors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 1373-1377 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A fast computer-controlled and fully automated deep level transient spectroscopy (DLTS) system is described. Various DLTS techniques can be operated without changing the hardware. Simultaneous data acquisition and data processing considerably reduces the measurement time. The sensitivity of the system is increased by digital compensation of the sample capacitance and by averaging of a high number of transients. All the trap parameters are determined during one temperature scan.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138603
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