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  • 1
    Electronic Resource
    Electronic Resource
    "Designer'' interfaces in II-VI/III-V polar heteroepitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7021-7028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The development of composite materials incorporating both II-VI and III-V compound semiconductors, such as ZnSe and GaAs, leads to the possibility of a variety of new devices of potential importance to the communications industry. In many cases, such as those involving resonant tunneling junctions and quantum well structures, the quality of the interface between the different compound semiconductors determines the ultimate quality of the device itself. Therefore, we have investigated the factors determining this interface quality for the GaAs/ZnSe system as prepared by molecular beam epitaxy. In this system, the stoichiometry of the substrate is of paramount importance. An excess of one constituent leads to high local electrical fields and poor interface morphology. Optimum growth of ZnSe on GaAs is achieved with GaAs substrate surfaces having a stoichiometry intermediate between the As- and Ga-rich extremes. We will describe a model that defines the conditions for good interface formation and summarize experimental evidence which supports the validity of this model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347641
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  • 2
    Electronic Resource
    Electronic Resource
    High-quality molecular-beam epitaxial regrowth of (Al,Ga)As on Se-modified (100) GaAs surfaces (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1038-1042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that high-quality molecular-beam epitaxial (MBE) regrowth of (Al,Ga)As on GaAs can be achieved by chemically passivating the GaAs surface ex situ prior to regrowth with aqueous selenium reagents. Reflection high-energy electron diffraction intensity oscillations show the bidimensional character of the regrowth and high-resolution transmission electron microscopy reveals defect-free regrown interfaces. Photoluminescence intensity from the Se-treated GaAs surfaces on which Al0.5Ga0.5 As is regrown rivals that from an all in situ grown AlGaAs/GaAs interface. The high quality of these regrown interfaces could be attributed to the thermally and chemically stable selenium and oxygen phases that remain bound to GaAs under MBE conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346742
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  • 3
    Electronic Resource
    Electronic Resource
    Contactless electrical characterization and realization of p-type ZnSe (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1033-1035 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe is a potentially useful optoelectronic material for applications requiring emission in the blue region of the spectrum. However, such applications necessitate the development of p-type material, for which reliable ohmic-contact technology does not exist. To avoid difficulties associated with contact formation while developing p-type material, we combine two contactless methods, reflectance-difference spectroscopy and inductive-coupled radio-frequency loss to determine carrier type and sheet resistance, respectively. Using this information we have prepared conducting p-type ZnSe by doping the material during growth with Li.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349687
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  • 4
    Electronic Resource
    Electronic Resource
    Distributed Bragg reflectors based on (Zn, Cd, Mg)Se for use in the visible spectral range (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2202-2207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Distributed Bragg reflectors (DBRs) based on ZnCdSe and ZnCdMgSe quarter wave layers have been grown on InP (001) substrates by molecular beam epitaxy. Their reflectivity maxima were controlled by the individual thicknesses of constituent layers, and were adjusted in the range of 615–500 nm, covering the red, green, and blue-green regions of the visible spectrum. The crystal quality of the structures was assessed by double crystal x-ray diffraction measurements. Reflectivity as high as 95% was achieved for the DBR structures that consisted of 16 periods. Theoretical calculations, based on the transfer matrix method, predict that a reflectivity above 99% can be achieved by increasing the number of periods to between 20 and 26. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337598
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  • 5
    Electronic Resource
    Electronic Resource
    Optical properties of BeCdSe/ZnCdMgSe strained quantum well structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5135-5138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the optical properties of BeCdSe/ZnCdMgSe single quantum well (QW) structures that consist of closely lattice matched ZnCdMgSe barrier layers and a strained BeCdSe QW layer (Δa/a=1.95%) grown on InP substrates. Emission from the red to the green regions of the visible spectrum was obtained from the structures with the QW thickness varying from 95 to 12 Å. Efficient QW emission, dominated by an exciton recombination behavior, was observed. From the Arrhenius plot of the integrated emission intensity as a function of temperature, an activation energy of 61 meV was obtained for a BeCdSe QW structure with a 48 Å thick QW layer. Parameters that describe the temperature dependence of the near band edge emission energy and the broadening of the excitonic emission were evaluated. Our results indicate that the BeCdSe-based QW structures are attractive for application as red light emitters. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413232
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  • 6
    Electronic Resource
    Electronic Resource
    Optimal GaAs(100) substrate terminations for heteroepitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 355-357 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quality of heteroepitaxial growth of II-VI materials on III-V substrates, such as ZnSe on GaAs(100), depends strongly on the atomic structure and stoichiometry of the substrate. We define and describe those structures that optimize heteroepitaxial interface growth on GaAs(100) and related surfaces, and propose specific models for the c(6×4), "3×1'', (4×6), an As-lean version of the (2×4), and Se substitutional such as the (4×3). It is proposed that a good heteroepitaxial interface, with no extraneous fields and no charge imbalance, is achieved with substrate structures which lead directly to the appropriate interface stoichiometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104632
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  • 7
    Electronic Resource
    Electronic Resource
    Quality improvements of ZnxCdyMg1−x−ySe layers grown on InP substrates by a thin ZnCdSe interfacial layer (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1317-1319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quality of lattice-matched ZnxCdyMg1−x−ySe epitaxial layers grown on (001) InP substrates with a III-V buffer layer has been improved by initially growing a ZnCdSe interfacial layer (50 Å) at low temperature. The widths of double crystal x-ray rocking curves for ZnxCdyMg1−x−ySe epilayers with band gaps as high as 3.05 eV were reduced to about 70 arcsec. The defect density evaluated from etch pit density and plan-view transmission electron microscopy measurements was reduced by two orders of magnitude, to 106–107 cm−2. The photoluminescence band edge emission became more symmetric and slightly narrower. It is proposed that an initial two-dimensional growth mode has been achieved by incorporating such a lattice-matched ZnCdSe layer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120980
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  • 8
    Electronic Resource
    Electronic Resource
    Cathodoluminescence imaging of patterned quantum well heterostructures grown on nonplanar substrates by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 776-778 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report cathodoluminescence (CL) imaging and transmission electron microscopy (TEM) studies of patterned GaAs/AlAs quantum well (QW) heterostructures grown by molecular beam epitaxy on periodically corrugated substrates. Faceting and surface diffusion during crystal growth result in significant lateral variations in QW thickness which translate quantum size effects into lateral band-gap patterning. The CL images directly display lateral periodic modulation in quantum well thickness and indicate the existence of two lateral potential wells formed at the bottom and apex of corrugations. Emission wavelengths are in agreement with TEM data on the patterned structures. Such periodic patterned QW heterostructures should be useful for the realization of arrayed one- and zero-dimensional semiconductor quantum structures, particularly lateral superlattice heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102684
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  • 9
    Electronic Resource
    Electronic Resource
    Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 72-74 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown InGaAs/InAlAs quantum wells and InGaAs, InAlAs single layers over InP nonplanar substrates. Photoluminescence, transmission electron microscopy, and energy-dispersive x-ray analysis give evidence for large lateral thickness and compositional variations, which lead to in situ modification of the growth profile. These effects, which differ for InGaAs and InAlAs, reveal the importance of surface migration in (Al,Ga)InAs. Our results demonstrate a tool for in situ lateral patterning of this material system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102655
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  • 10
    Electronic Resource
    Electronic Resource
    Etching and cathodoluminescence studies of ZnSe (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 690-691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of ZnSe grown on GaAs substrates were reactive ion etched using BCl3 /Ar gas mixtures. Using an optimized etching process, photolithographically defined micrometer sized structures were etched several micrometers deep with straight sidewalls and smooth surfaces. Cathodoluminescence was measured from both etched and unetched surfaces at room temperature. Luminescence intensities of etched surfaces are shown not to be degraded by the reactive ion etching process. Cathodoluminescence intensities of etched pixels with exposed sidewalls were found to be greater than the intensities measured from unetched flat surfaces. This suggests the possibility of efficient etched light-emitting structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99852
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