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  • 1
    Electronic Resource
    Electronic Resource
    Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 984-992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of GaAs and (Al,Ga)As doped with boron (from diborane) and silicon was investigated to examine the effect of boron on (DX) centers in silicon-doped material. The addition of diborane to the growth of GaAs and (Al,Ga)As results in the superlinear incorporation of boron into the solid with a concurrent reduction in the growth rate. Boron incorporation also decreases as the growth temperature is increased. Additionally, the AlAs mole fraction increases with increasing diborane during (Al,Ga)As growth. The DX center was not eliminated in (Al,Ga)As by the addition of boron. The thermal stability of these materials was also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351295
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  • 2
    Electronic Resource
    Electronic Resource
    The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3124-3129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs has been investigated. This contact scheme has been shown to form planar contact interfaces with contact resistivities less than 1 × 10−6 Ω cm2. This investigation demonstrates that the contact resistivity can be modeled by a sum of two components in series: (i) a contact resistivity due to the metal-GaAs interface and (ii) a contact resistivity due to the high-low junction formed between the highly doped regrown GaAs layer and the substrate. For degenerately doped samples (4.5 × 1019 cm−3), the contact resistivity is nearly independent of the temperature from 300 to about 30 K, indicating that the dominant resistivity is that across the metal-semiconductor tunneling barrier. For samples with lower doping concentrations (≤ 1.5 × 1018 cm−3), the contact resistivity increases with decreasing temperature, suggesting the dominance of the contact resistivity due to the high-low junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348579
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of indium on the properties of DX centers in Si-doped Iny(Ga0.3Al0.7)1−yAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1674-1681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of In to Si-doped Al0.3Ga0.7As has been investigated to determine its effect on DX centers. As expected, the persistent photoconductivity of the material is reduced as the band gap decreases with increasing In concentration. In addition, a new deep level transient spectroscopy peak is observed for the first time, which we attribute to DX centers having near In neighbors. This is clear evidence that the DX levels are highly localized states associated with donor impurities, whose properties are very sensitive to the local atomic configuration near the donor atom. This work supports previously published work on the effects of alloy disorder on DX centers, which is the strongest evidence to date for the microscopic configuration of the DX level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346651
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  • 4
    Electronic Resource
    Electronic Resource
    Nonspiking ohmic contact to p-GaAs by solid-phase regrowth (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5714-5718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-resistance and nonspiking contact consisting of a layered structure of Si/Ni(Mg) on p-GaAs is formed by solid-phase regrowth. Backside secondary-ion mass spectrometry and cross-sectional transmission electron microscopy show an initial reaction between Ni and GaAs to form NixGaAs which is later decomposed to form NiSi by reacting with the Si overlayer. This reaction leads to the solid-phase epitaxial regrowth of a p+ -GaAs layer doped with Mg. The total consumption of substrate is limited to a few hundred angstroms. The as-formed ohmic contact structure is uniform and planar with an average specific contact resistivity of ∼7×10−7 Ω cm2 on substrates doped to 8×1018 cm−3. The thermal stability of this contact scheme is also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346990
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of structural parameters on transport characteristics of GaInAs/AlInAs two-dimensional electron gases grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1614-1616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of structural parameters on the transport characteristics from 15 to 300 K of molecular beam epitaxy grown GaInAs/AlInAs two-dimensional electron gas structures lattice matched to InP is determined. The AlInAs buffer layer thickness was varied from 1000 to 10 000 A(ring). One sample also incorporated a GaInAs/AlInAs superlattice. The AlInAs spacer layer was varied from 25 to 200 A(ring). The buffer layer thickness and structure has almost no effect on the mobility or sheet density. Increases in the AlInAs spacer thickness resulted in a monotonically decreasing sheet density and a peak in the mobility at 100 A(ring). The highest 77 K mobility was 66 700 cm2/V s with ND=1.20×1012 cm−2 in the structure with the 100 A(ring) spacer. The effect of illumination and temperature on the sheet concentration in these structures as well as on "bulk'' AlInAs:Si is much smaller than in AlGaAs/GaAs structures or "bulk'' AlGaAs, indicating that devices based on this material system will not be characterized by freeze-out and persistent photoconductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105142
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  • 6
    Electronic Resource
    Electronic Resource
    Thermally stable and nonspiking Pd/Sb(Mn) ohmic contact to p-GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1617-1619 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thermally stable, nonspiking ohmic contact to p-GaAs has been developed based on the solid-phase regrowth mechanism. The contact metallization consists of a layered structure of Pd(250 A(ring))/Sb(100 A(ring))/Mn(10 A(ring))/Pd(250 A(ring))/p-GaAs. Thermal annealing of the contact between 300 and 600 °C for 10 s yields contact resistivities in the range of low 10−6 Ω cm2 on substrates doped to 2.5×1018 cm−3. A contact resistivity of 4.5×10−7 Ω cm2 can be obtained after annealing at 500 °C on samples with a doping concentration of 4.5×1019 cm−3. The contact metallization remains uniform in thickness and the contact interface is flat after the contact is formed. The consumption of the substrate is limited to less than a hundred angstroms. Contact resistivities are stable at 400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105143
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  • 7
    Electronic Resource
    Electronic Resource
    Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2540-2542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved solid phase epitaxy of thin amorphous Si layers on GaAs using in situ plasma processing and subsequent annealing. High-resolution transmission electron microscopy of the SiO2/Si/GaAs structure shows that a Si layer (approximately-equal-to)20 A(ring) thick epitaxially crystallizes on GaAs after annealing at (approximately-equal-to)570 °C in N2. Metal-oxide-semiconductor capacitors fabricated on these structures confirm the high quality of these interfaces. By comparing a high- frequency (100 kHz) capacitance-voltage curve with a quasi-static one, interface state densities as low as 4×1012 eV−1/cm−2 were measured on both n- and p-type GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104820
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  • 8
    Electronic Resource
    Electronic Resource
    A near-field scanning optical microscopy study of the photoluminescence from GaN films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3519-3521 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved spatially resolved photoluminescence from GaN films using a near-field scanning optical microscope (NSOM). GaN films grown by hydride vapor phase epitaxy (HVPE) and metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates have been studied. We have performed spatial scans of topography, band edge, and yellow luminescence signals. Atomic force microscopy measurements were also made and compared with the NSOM topography. We have found spatial variations in photoluminescence characteristics at the submicron scale for both HVPE and MOVPE GaN. The observed enhancement of yellow luminescence at multiatomic step edges on the HVPE GaN surface suggests that the yellow luminescence is associated with chemical impurities incorporated during the growth of GaN films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117231
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  • 9
    Electronic Resource
    Electronic Resource
    Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 910-912 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The selective epitaxy of GaAs was demonstrated in the metalorganic vapor phase epitaxy of GaAs utilizing diethylgallium chloride [Ga(C2H5)2Cl] and AsH3. No GaAs will deposit on SiO2, Si3N4, or SiONx under normal growth conditions, i.e., 600–800 °C at 0.1 atm reactor pressure. Unlike other forms of selective epitaxy, there is no enhanced growth rate at the edge of the selectively grown regions. The selectivity is a result of the reduced adsorption of the growth precursor, probably GaCl, on the masking material relative to the exposed GaAs areas. Similar selectivity should be possible for Al and In containing semiconductors using an analogous growth chemistry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100805
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical characteristics of regrown interfaces using diethylgallium chloride-based metalorganic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2214-2216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of regrown interfaces deposited using an alternate metalorganic chemistry, diethylgallium chloride (DEGaCl), are investigated. With the appropriate HCl pre-regrowth surface treatment, these interfaces are found to be of very high quality with no substantial interface charge. The contact resistivity, as determined by transmission line measurements, is (2–4)×10−7 Ω cm2 at both 77 and 300 K. Secondary-ion mass spectroscopy measurements show no detectable accumulation of impurities at the regrown interface, in contrast to those regrown using the conventional trimethylgallium-based chemistry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102064
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