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  • 1
    Digitale Medien
    Digitale Medien
    Nonspiking ohmic contact to p-GaAs by solid-phase regrowth (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5714-5718 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A low-resistance and nonspiking contact consisting of a layered structure of Si/Ni(Mg) on p-GaAs is formed by solid-phase regrowth. Backside secondary-ion mass spectrometry and cross-sectional transmission electron microscopy show an initial reaction between Ni and GaAs to form NixGaAs which is later decomposed to form NiSi by reacting with the Si overlayer. This reaction leads to the solid-phase epitaxial regrowth of a p+ -GaAs layer doped with Mg. The total consumption of substrate is limited to a few hundred angstroms. The as-formed ohmic contact structure is uniform and planar with an average specific contact resistivity of ∼7×10−7 Ω cm2 on substrates doped to 8×1018 cm−3. The thermal stability of this contact scheme is also reported.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346990
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  • 2
    Digitale Medien
    Digitale Medien
    An investigation of the Pd-In-Ge nonspiking Ohmic contact to n-GaAs using transmission line measurement, Kelvin, and Cox and Strack structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4364-4372 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The Pd-In-Ge nonspiking Ohmic contact to n-GaAs has been investigated using the transmission line, the Kelvin, and the Cox and Strack structures. It has been found that a layered structure of Pd/In/Pd/n-GaAs with 10–20 A(ring) of Ge imbedded in the Pd layer adjacent to the GaAs can lead to a hybrid contact. When the Ohmic formation temperature is above 550 °C, a layer of InxGa1−xAs doped with Ge is formed between the GaAs structure and the metallization. When the Ohmic formation temperature is below 550 °C, a regrown layer of GaAs also doped with Ge is formed at the metallization/GaAs interface. The contact resistivity of 2–3×10−7 Ω cm2 for this contact structure is nearly independent of the contact area from 900 to 0.2 μm2. Low-temperature Ohmic characteristics and thermal stability are also examined.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348360
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  • 3
    Digitale Medien
    Digitale Medien
    Chemisorbed CO site interconversion on Ni(111) induced by the electric field of physisorbed second layers (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 1628-1635 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: A new and general phenomenon related to the electrical polarization of a condensed layer has been observed: A polar overlayer physisorbed on top of a chemisorbed CO layer on Ni(111) causes a CO site interconversion from terminally bound CO to bridged bound CO species in the CO underlayer. It has been found that the site interconversion observed is independent of the molecular identity of the physisorbed overlayer, but is closely related to the work-function decrease induced by the polarized overlayer. This phenomenon is explained in terms of the interaction of CO with a very strong electric field, which is of the order of 0.3 V/A(ring), produced by the polarized overlayers. The electric field causes a rehybridization of underlayer chemisorbed CO species producing a redistribution of CO molecules to different adsorption sites on Ni(111).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.462147
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  • 4
    Digitale Medien
    Digitale Medien
    Field-induced surface chemistry of NO (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 6065-6069 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: A microscopic theory of field adsorption is used to study the adsorption and reaction of NO on a Pt(111) surface in high electrostatic fields. We find that below 0.4 V/A(ring) only NO is adsorbed stably. Above this value dissociation sets in that leads around 1.2 V/A(ring) to the formation of N2O. A molecular orbital analysis is given of the reaction pathway and to identify the stabilization mechanism.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.459494
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  • 5
    Digitale Medien
    Digitale Medien
    Toxic Gases in Silage, Mass Spectrometric Study of Nitrogenous Gases Produced by Silage (1960)
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 8 (1960), S. 239-242 
    Details
    ISSN: 1520-5118
    Quelle: ACS Legacy Archives
    Thema: Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/jf60109a023
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  • 6
    Digitale Medien
    Digitale Medien
    Phonon mode study of Si nanocrystals using micro-Raman spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6705-6708 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: First-order Raman spectra of hydrogenated nanocrystalline silicon (nc:Si:H) films show unexpected features in their optical vibrational modes for crystallites with sizes ranging from 2 to 6 nm. Two size-dependent spectral regions, one with the stronger intensity peaking at 505–509 cm−1 and another a shoulder-like band between 512 and 517 cm−1, are clearly identified using a detailed line-shape analysis and the strong phonon confinement model. The strong size dependence of the relative integrated intensities of the two bands suggests that the modification of the vibrational spectra can be attributed to an effect induced by the atomic vibrations from the near-surface region of the nanocrystals. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360494
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  • 7
    Digitale Medien
    Digitale Medien
    On the low resistance Au/Ge/Pd ohmic contact to n-GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4211-4215 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report that a Au/Ge/Pd layered structure can result in low contact resistivities (∼10−6 Ω cm2) to n-GaAs processed in three temperature ranges (175–200, 340–350, and 425–450 °C). The contacts processed below the Au–Ge eutectic temperature (361 °C) show good surface and interface morphology, thermal stability, Au wire bondability, and reproducibility. The ohmic contact formation mechanisms are also presented. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361788
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  • 8
    Digitale Medien
    Digitale Medien
    Defect-assisted ohmic contacts on p-InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2056-2060 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Single-element contacts, Pd or Ni, on various p-InP substrates grown by liquid-encapsulation Czochralski (LEC) and by metal-organic chemical vapor deposition were investigated. Pd or Ni contacts on the substrates supplied by one certain manufacturer were found to be ohmic with a minimum contact resistivity of ∼5×10−5 Ω cm2 after annealing between 420 and 500 °C. However, ohmic behavior was not observed for these contacts on other substrates. Hall measurement, double-crystal x-ray diffractometry, and photoluminescence technique were used to evaluate the substrates. It was speculated that existence of intrinsic defects, such as P vacancies and other possible defects, in p-InP grown by LEC method may be responsible for the observed difference in ohmic behavior. A defect-assisted tunneling mechanism is proposed to account for the observed ohmic behavior of single-element contacts on certain p-InP substrates. This approach is potentially useful for making ohmic contacts to other compound semiconductors. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358845
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  • 9
    Digitale Medien
    Digitale Medien
    Degradation mechanism of the nonspiking ohmic contacts formed by solid-phase regrowth process on n-GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1607-1610 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The thermal stability of the Ge/Pd and the Pd-In-Ge ohmic contacts on n-GaAs formed by the solid-phase regrowth process has been investigated. It was found that degradation of these contacts at elevated temperatures cannot be rationalized by a single degradation process. The degradation at different temperatures can be best described by two processes: (a) a diffusion-controlled process and (b) a reaction-controlled process. The experimental results show that the thermal stability of the contacts can be improved by SiNx capping layers when the reaction-controlled process is the most significant process; however, SiNx capping layers cannot improve their thermal stability if the diffusion-controlled process is the dominant degradation process at elevated temperatures. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358914
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  • 10
    Digitale Medien
    Digitale Medien
    Ohmic contact formation mechanism of the Au/Ge/Pd/n-GaAs system formed below 200 °C (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4216-4220 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the ohmic contact formation mechanism of the low resistance (∼1×10−6 Ω cm2) Au/Ge/Pd contact to n-GaAs annealed at 175 °C. Cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry were utilized in this study. It is found that the solid phase regrowth process, interdiffusion between Au and Ge, and the enhancement of the conductivity of the excess Ge layer are responsible for the observed low contact resistivity. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361789
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