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  • 1
    Electronic Resource
    Electronic Resource
    Dynamic characteristics of dislocations in highly boron-doped silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5788-5790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic behavior of dislocations in highly boron (B)-doped Si crystals with concentration up to 2.5×1020 cm−3 is investigated using the etch pit technique. Suppression of the generation of dislocations from a surface scratch is found for B-doped Si and the critical stress for dislocation generation increases with B concentration, which is interpreted in terms of dislocation locking due to impurity segregation. The velocity of dislocations in B-doped crystals is revealed to increase by increasing the B concentration. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367407
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  • 2
    Electronic Resource
    Electronic Resource
    Dynamic behavior of dislocations in InAs: In comparison with III–V compounds and other semiconductors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4209-4213 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic behavior of α and β dislocations in both undoped and impurity-doped InAs crystals is investigated as a function of stress and temperature by means of the etch pit technique. Suppression of the generation of dislocations from a surface scratch is found in S doped InAs, which is interpreted in terms of dislocation locking due to impurity clusters and/or impurity-defect complexes as has been observed in other III–V compounds. α dislocations move faster than β dislocations in the undoped and impurity-doped InAs. S donors reduce the velocities of both α and β dislocations. On the other hand, Zn acceptors enhance the velocity of α dislocations and reduce the velocity of β dislocations. Such features are related to an electronic state of the dislocations in the elementary process of the motion. The measured velocities are expressed using a simple empirical equation as a function of stress and temperature in the same manner as for other semiconductors. The linear dependence of the activation energies for dislocation motion on the band gap energy shows a clear distinction dependent on the group of semiconductors, i.e., the elemental and IV–IV compound, III–V compound, and II–VI compound. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368638
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence spectra of deformed Si-Ge alloy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6991-6996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured photoluminescence (PL) spectra of deformed bulk Si-Ge alloys and found peculiar peak shifts of D1 and D2 lines depending on the deformation and annealing temperatures. Alloy crystals were grown by the Czochralski method. Specimens were deformed by compression at temperatures between 700 and 900 °C in an argon atmosphere. PL spectra were measured at 4.2 K. Peak positions of D1 and D2 lines depended on the deformation temperatures; they were at higher energies at higher deformation temperatures. On the other hand, those of D3 and D4 did not depend on the deformation temperature. The magnitudes of peak shifts of D1 and D2 lines were proportional to t2/3 at small t due to isothermal annealing ( t: the duration of annealing) at around 650 °C. The activation energy was determined to be 2.5 eV, which was much smaller than that of self-diffusion. These results were interpreted as being due to the change of alloy composition around dislocations caused by the elastic interaction between dislocations and constituent atoms, i.e., Si and Ge, in which process point defects generated during deformation were thought to play a crucial role. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363773
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  • 4
    Electronic Resource
    Electronic Resource
    Short-time diffusion of zinc in silicon for the study of intrinsic point defects (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3559-3561 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental procedure has been developed which permits accurate short-time diffusion anneals for diffusion periods as short as a few seconds. This method is applicable to diffusors which are volatile at the diffusion temperature. It will be illustrated for zinc diffusion into silicon which mainly takes place via the kick-out mechanism. Previous long-time diffusion studies have yielded the product CeqIDI of equilibrium concentration and diffusivity of Si self-interstitials(I) involved in the interstitial-substitutional exchange of Zn. The present short-time diffusion method enables us to determine CeqI and DI separately by comparing measured spreading-resistance profiles with computer simulations based on the kick-out model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106393
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  • 5
    Electronic Resource
    Electronic Resource
    Dislocation velocity in GeSi alloy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1264-1266 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Velocities of dislocations in single crystal Ge1−xSix alloy semiconductors with x=0.004–0.022 grown by the Czochralski method were investigated by means of etch pit technique in the temperature range 450–700 °C and the stress range 3–20 MPa. The dislocation velocity in the GeSi decreases monotonically with an increase in the Si content, reaching about a half of that in Ge at x=0.022. The dependencies of the dislocation velocity on stress and temperature in the alloys are expressed by the same type of empirical equation as those in other elemental and compound semiconductors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117386
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  • 6
    Electronic Resource
    Electronic Resource
    An Ultra-Low-Temperature Diffractometer Based on an 3He–4He Dilution Refrigerator used for Synchrotron-Radiation X-ray Diffractometry and Topography (1995)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 28 (1995), S. 375-384 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The direct observation of crystal structure at ultra-low temperatures helps better understanding of phase transformations and phase stability. Two sets of 3He-4He dilution refrigerators with a top-loading facility were installed at BL-3C2 and 6C1 of the Photon Factory. The first is used exclusively for topography of quantum crystals of solid 3He and 4He for studies of lattice defects. Typical examples of topographs that indicate an annealing effect of solid helium, understood in terms of a quantum tunneling, are presented. The disappearance of downward diffraction Laue spots (2θB = 90°) is discussed on the basis of the temperature and other factors in solid helium. The second refrigerator is used for X-ray diffraction studies of crystalline solids. A splitting of the Laue spots from Cs2NaHoCl6 below 150 mK, giving evidence of a cooperative Jahn–Teller transition of the first kind at the lowest transition temperature ever observed, is briefly explained as an example of diffractometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889894013087
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  • 7
    Electronic Resource
    Electronic Resource
    Behaviour of dislocations in GaAs revealed by etch pit technique and X-ray topography
    Amsterdam : Elsevier
    Journal of Crystal Growth 126 (1993), S. 19-29 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(93)90223-J
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  • 8
    Electronic Resource
    Electronic Resource
    Crystal growth of dislocation-free LiNbO"3 single crystals by micro pulling down method
    Amsterdam : Elsevier
    Journal of Crystal Growth 142 (1994), S. 339-343 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)90342-5
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  • 9
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial growth and characterization of LiNbO"3 single crystal films
    Amsterdam : Elsevier
    Journal of Crystal Growth 144 (1994), S. 213-217 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)90458-8
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  • 10
    Electronic Resource
    Electronic Resource
    Mechanical Behaviour of Semiconductors in Terms of Dislocation Dynamics (1991)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 19-20 (Jan. 1991), p. 295-310 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.19-20.295.pdf
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