Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Review of Scientific Instruments
67 (1996), S. 1942-1946
ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A detailed description of an experimental configuration based on photothermal deflection spectroscopy (PDS) and transmittance techniques that enables high sensitivity room temperature absorption measurements over a spectral region extending between 300 nm and 3.4 μm is reported. It is shown that the simultaneously determined PDS and transmittance spectra can be processed to eliminate completely the interference induced oscillations in the spectra which are observed when the film refractive index differs substantially from the one of the substrate. A configuration based on the photopyroelectric and transmittance techniques, though less sensitive than the previous one, is shown to be suitable for the same kind of measurements at cryogenic temperatures. Absorption bands in implanted Si between 2.8 and 3.4 μm have thus been detected and tentatively associated with multiphonon defect assisted absorption bands. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1146947
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