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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    JETP letters 67 (1998), S. 501-507 
    ISSN: 1090-6487
    Keywords: 74.50.+r
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The anomalous proximity effect between a d-wave superconductor and a thin disordered normal layer is studied theoretically in the framework of Eilenberger equations. It is shown that disorder of the quasiparticle reflection from this thin layer leads to the formation of an s-wave component localized near the boundary. The angular and spatial structure of the pair potential near the interface is studied.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    JETP letters 69 (1999), S. 262-267 
    ISSN: 1090-6487
    Keywords: 74.80.Dm ; 73.25.+i
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A theoretical model of a rough surface in a d-wave superconductor is studied for the general case of arbitrary strength of electron scattering by an impurity layer covering the surface. Boundary conditions for quasiclassical Eilenberger equations are derived at the interface between the impurity layer and the d-wave superconductor. The model is applied to the self-consistent calculation of the surface density of states and the critical current in d-wave Josephson junctions.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The electron thermal flux and electron thermal conductivity of the interface between a normal metal and a high-temperature superconductor (HTSC) are calculated using quasiclassical equations. Calculations are made for various values of the interface transparency and various orientations of the axes of a HTSC crystal. It was shown that compared with an interface between a normal metal and an “ordinary” superconductor (s-type symmetry, isotropic order parameter), the thermal conductivity of an HTSC-normal-metal interface is substantially higher and has a nonactivation dependence. The thermal properties were calculated for various interface models, including mirror and diffuse, and also for various potential barrier profiles. An analysis is made of the possibility of using devices based on normal-metal-HTSC interfaces for bolometric and microrefrigerator applications.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 235-240 (1994), S. 1823-1824 
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 848-850 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyzed the transport of charge carriers across PrBa2Cu3−xGaxO7−δ (PBCGO) barriers as a function of barrier thickness, Ga-doping level, temperature, and bias voltage. It was found that by Ga doping, the normal state resistance (Rn) of the junctions was systematically increased, while the critical current (Ic) remained constant. We argue that pair transport takes place by direct tunneling, whereas the quasiparticles have access to channels formed by one or more localized states inside the barrier. By Ga doping the IcRn products were increased, up to 8 mV at 4.2 K for junctions with 8 nm thick PrBa2Cu2.6Ga0.4O7−δ barriers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 106 (1997), S. 297-304 
    ISSN: 1573-7357
    Keywords: 73.23 ; Pg. 74.40.+k ; 74.50.+r ; 74.80.Fp
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We use a detailed microscopic analysis to study electron transport in normal diffusive conductors in the presence of proximity induced superconducting correlation. In the case of transparent barriers, superconducting correlations and electrical field can penetrate causing a whole range of novel nonequilibrium effects. These effects are explained by the introduction of a second, correlated density of states. Our results are fully consistent with recent experimental findings.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 106 (1997), S. 249-254 
    ISSN: 1573-7357
    Keywords: 74.50+r ; 74.80.Fp
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The approach developed by Blonder, Tinkham and Klapwijk (BTK) for calculation of the quasiparticle (qp) current in NcS contacts is generalized to the case of ScNS and SNcNS contacts with disordered NS electrodes. Amplitudes of Andreev and normal reflections at the ballistic constriction are calculated. The relation between the qp current and energy spectrum of NS proximity sandwich is found for arbitrary transparencies of the constriction and NS interfaces. The appearance of new series of subharmonic peaks associated with the two-gap structure in the density of states of NS electrodes is demonstrated. The model is also applied to calculation of the critical and the excess currents in ScNS and SNcNS for different interface parameters. The relevance of the model to transport mechanisms in step-edge HTS SNS contacts is discussed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 70 (1988), S. 83-130 
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The microscopic theory of the Josephson effect in tunnel structures with electrodes having spatially inhomogeneous superconducting properties is formulated. Two mechanisms of inhomogeneity are considered. The first is associated with the presence of a thin transition normal layer located near the tunnel barrier, which is relevant for junctions based on refractory superconductors. The second case is the trapping of Abrikosov vortices by junction electrodes. The tunnel current components are calculated numerically in the whole temperature range 0〈T〈T c and magnetic field range 0〈H〈H c2. It is shown that the tunnel current is extremely sensitive to the type of smearing of the singularities of the classical tunnel theory ateV=2Δ. The results allow experimental determination of the characteristics of real tunnel junctions.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 78 (1990), S. 375-386 
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The influence of the electron-electron interaction on the upper critical fieldH c2 of thin superconducting films with large resistance and of layered superconductors is investigated theoretically. The orbital effect only is taken into account. It is shown that the electron-electron interaction in the diffusion and Cooper channels influencesH c2 in different manners. The interaction in the diffusion channel (dynamically screened Coulomb interaction) leads to essential deviations from the standard BCS dirty limitH c2 (T) curve at low temperatures and as a result upward curvature inH c2 (T) is possible. The interaction in the Cooper channel is significant only at temperaturesT c−T≪Tc and enlarges the slopedH c2 (T)/dt atT=T c.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1573-7357
    Keywords: 74.40 + k ; 74.50 + r
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract On the basis of a microscopic model of the proximity effect in an SS'-sandwich we have calculated effective trapping, excitation, and tunneling rates of the reduced gap region in an SS′IS″S junction as a function of temperature, voltage over the junction and strength of the proximity effect. We developed a simple model to describe the effect of magnetic fields on the gap of the superconductor, and calculated the trapping rate as function of the field. The experimentally determined gap reduction and quasiparticle loss times as function of the field were described in terms of this model.
    Type of Medium: Electronic Resource
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