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Energy resolution of 12 eV at 5.9 keV from Al-superconducting tunnel junction detectors (2001)

Angloher, G. ; Hettl, P. ; Huber, M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 1425-1429

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: An energy resolution of ΔE=12 eV [full width at half maximum (FWHM)] has been measured for the 55Mn Kα1 line (E=5.9 keV) using a superconducting lead absorber (90×90×1.3 μm3) readout by a single aluminum superconducting tunnel junction (100×100 μm2). The total detector area has been illuminated, while a slit mask of 150 μm width was used to partially shadow the detector leads and substrate area from impinging x rays. The total electronic noise contribution was measured as ΔEelec=4 eV (FWHM). The superconducting tunnel junction is located on a Si3N4 membrane of thickness 0.3 μm, the lead absorber is separated from the superconducting tunnel junction's top layer by a thin layer of natural aluminum oxide. No deviations from linear energy response were observed in the energy range between E=1.74 keV and E=6.49 keV. The same resolution was obtained for a single aluminum superconducting tunnel junction, where the influence of substrate events was suppressed by a metallic buffer layer between tunnel junction and substrate. The escape of recombination phonons into the substrate causes small nonlinearities in the tunnel junction's energy response. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1331332

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Measurement of the tunnel rate in SIS' tunnel junctions as function of bias voltage (1996)

Kraus, H. ; Gutsche, M. ; Hettl, P. ; [et al.]

Springer

Journal of superconductivity 9 (1996), S. 245-252

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ISSN: 1572-9605

Keywords: SIS' junctions ; tunnel rate ; detectors

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: Abstract Cryogenic detectors with superconducting tunnel junctions can provide an energy resolution improved by at least one order of magnitude compared with standard semiconductor detectors. While the detection principle was already demonstrated many years ago, the past years were dedicated to the transition from the laboratory sample to practical detectors. Our most favored detector design gives rise to tunnel junctions with electrodes of unequal energy gaps. In such hetero tunnel junctions bias conditions can be established which cause a negative signal current. We report the experimental verification of this effect, and we discuss the yield of charge signal of cryogenic detectors based upon superconducting tunnel junctions.