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  • 1
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of dopants implanted into preamorphized silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 683-687 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rapid thermal annealing behavior of BF+2 and As+ +BF+2 implanted into crystalline and preamorphized silicon is studied. After solid phase epitaxy nearly complete electrical activity is obtained without channeling tails (for the preamorphized silicon) or significant thermal diffusion. Dislocation loops always appear near the amorphous-crystalline (α/c) interface of the preamorphized layer after solid phase epitaxy annealing (called "deep disorder''). For preamorphization using Si+ damage into room-temperature silicon targets, dislocations also span between the deep disorder and the surface, called "spanning dislocations.'' The spanning dislocations are eliminated by preamorphization using Ge+ implanted into room-temperature silicon targets. Transmission electron microscopy studies show the spanning dislocations move to the surface under thermal treatment, while the deep disorder remains to act as a getter region. The deep disorder is shown to getter F, or Au when Au is intentionally diffused from the wafer backside. The same kind of disorder correlates the limited diffusion behavior of B for BF+2 implants into crystalline Si. Otherwise, for the cases studied, the secondary ion mass spectrometry and Rutherford backscattering spectrometry profiles show nearly normal diffusive behavior for B or As dopants for 10-sec rapid thermal anneal. General physical interpretations are noted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336182
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Patterns of Myocardial Gene Expression after Cycles of Brief Coronary Occlusion and Reperfusion (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 723 (1994), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1994.tb36734.x
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial growth induced by phosphorus tribromide doping of polycrystalline silicon films on silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1322-1327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The doping of polycrystalline silicon films is known to structurally change the material, producing larger grains after annealing. The grain growth is especially enhanced during high-temperature doping using a PBr3 or POCl3 dopant source. In this paper, we report our observation of the PBr3-doping induced epitaxial growth in polycrystalline silicon films deposited on silicon substrates and on the silicon in windows etched in the oxide. Epitaxial films contained twins induced by the microcrystals at the substrate-film interface. Models are proposed to explain possible mechanisms for grain growth of undoped and PBr3-doped polysilicon films. Also proposed are possible explanations for the observed microcrystalline growth at the epitaxy-substrate interface and in the epitaxial film itself.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334533
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Study of cobalt-disilicide formation from cobalt monosilicide (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1880-1886 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction CoSi+Si→CoSi2 has been investigated in the temperature range of 500–600 °C, using Rutherford backscattering, x-ray diffraction, transmission electron microscopy, and four-point sheet-resistance measurements. The reaction is very slow at 500 °C and extremely fast at 600 °C, and appears to occur in four stages: (a) nucleation of the CoSi2 phase at the grain-boundary triple points, (b) lateral growth from nucleation sites to form a continuous layer on the silicon surface, (c) growth in thickness by diffusion through this disilicide layer, and (d) the lateral epitaxial growth by eliminating the grain boundaries. The diffusion through the disilicide layer seems to be a rate-limiting process with high activation energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334419
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    Paper (German National Licenses)
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