Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 28 (1995), S. 4234-4248 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 169-176 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Environmental science & technology 10 (1976), S. 345-350 
    ISSN: 1520-5851
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Microsystem technologies 6 (2000), S. 184-188 
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  In this paper, we review work on novel, high aspect processes for microinertial components at the Defence Evaluation and Research Agency (DERA). High aspect components may lead to significant cost-performance improvements in both accelerometers and gyroscopes. We have evaluated 3 low temperature process technologies – silicon on insulator (SOI) HARM, UV electroforming and bulk HARM. Prototype microinertial devices fabricated in these technologies are also presented. The potential of the processes for integration with on-chip CMOS electronics is assessed which may be either as part of a fully integrated MEMS process or as “value-added” post-processing on commercial CMOS wafers. Bonded SOI (BSOI) materials has been specially designed for micromachining applications to give a low stress material that is optimised for a sacrificial release process. Trench isolation is achieved by deep dry etching to the buried dielectric. These trenches may be refilled to allow metallisation to reach isolated components. Structures with aspect ratios of up to 50:1 have been realised using a combination of photolithography, deposition and deep dry etching. CMOS compatibility has been demonstrated. The process is an attractive manufacturing technology. Electroforming of nickel in resist moulds formed using conventional UV photolithography has also been investigated. Some of the early limitations with this technology have been overcome by using a new resist technology, SU8. The process needs to mature further, but remains a promising candidate. Bulk HARM uses deep dry etching of a bulk silicon membrane which is defined using wet etching. Device isolation is difficult and process control complex making this the least attractive of the technologies.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Inorganica Chimica Acta 216 (1994), S. 155-161 
    ISSN: 0020-1693
    Keywords: Amine complexes ; Chelate ligand complexes ; Chromium complexes ; Crystal structures
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1249-1251 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of oxygen partial pressure on the stability of the high Tc phase (〉100 K) in a Bi-Pb-Sr-Ca-Cu-O system has been studied using resistivity, x-ray diffraction, and ac susceptibility measurements. It was observed that part of the high Tc phase formed by sintering at 840 °C in a low oxygen partial pressure of 1/10 atmosphere was transformed into a low Tc phase (∼80 K) and an insulating phase by heating at the same sintering temperature in O2 of one atmosphere. The original high Tc phase was restored upon retreatment at the same temperature in a low oxygen partial pressure of 1/10 atmosphere.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 3019-3022 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Phase transitions in the quasi-two-dimensional layer structured (C10H21NH3)2SnCl6, an order–disorder transition and a conformational transition of the hydrocarbon chains, were studied by means of 1H NMR (nuclear magnetic resonance). A newly defined order parameter in the low-temperature phase, the dipolar splitting of the rigid hydrocarbon lineshape component, was shown to represent the order–disorder motion of the hydrocarbon chains, explicitly revealing its three-dimensionality. The conformational transition was marked by a discontinuity in the spin-lattice relaxation rate (1/T1). On the other hand, no obvious anomaly was observed in the spin-lattice relaxation rate at the order–disorder transition at 200 MHz, whereas a weak anomaly was observed at 45 MHz, indicating that the critical dynamics associated with the order–disorder transition is manifest in the low-frequency region of the spectral density. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 6964-6966 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Phase transitions in the layer structured (C18H37NH3)2SnCl6 were studied using 1H NMR. The spin-lattice relaxation rate reflects the critical slowing down around the order–disorder phase transition temperature, and is compatible with the three-dimensional Ising model. A critical slowing down is also observed at the conformational transition in the second moment measurement, presumably for the first time. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 728-730 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results for two new channel waveguide phase modulators formed by impurity-induced disordering (IID) with Zn diffusion in AlGaAs/GaAs are presented. One device utilizes side diffusion into ridges of single quantum well material and the other utilizes surface diffusion into double-heterostructure material. Waveguide loss for both TE and TM polarizations, and effective index steps calculated from observed mode profiles are reported. TE/TM mode conversion was observed without bias under certain conditions. Initial results for phase modulation are in agreement with expectations and appear not to be affected by the IID.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background Urticaria/angioedema is a common aspirin-induced allergy; however, its pathogenic mechanism is not understood.Objective In order to uncover the genetic mechanism, we studied the associations of the human leucocyte antigen (HLA) genotypes in patients with aspirin-induced urticaria compared with aspirin-intolerant asthma and normal control in a Korean population.Methods Ninety-four aspirin-induced urticaria patients presenting urticaria/angioedema-induced by both ASA and NSAID (50 had underlying chronic urticaria) and showing positive responses on oral aspirin challenge test, 76 aspirin-intolerant asthmatics with positive responses on lysine–aspirin bronchoprovocation test, and 185 normal healthy controls were enrolled. HLA-DRB1, DQB1, and DPB1 genotypings were performed by direct DNA sequencing analysis.Results The allele frequencies of HLA-DRB1*1302 (18.1%) and HLA-DQB1*0609 (10.1%) in aspirin-induced urticaria were significantly higher than in aspirin-intolerant asthma (5.3%, P=0.0004; 2.0%, P=0.0024) and in normal controls (8.1%, P=0.0005; 3.2%, P=0.0008), and they remained significant after correcting for multiple comparisons. The patients with these two HLA markers had a significantly younger age than patients without, while no associations were found in with respect to atopic status, a history of previous allergic diseases, total IgE level, or presence of underlying chronic urticaria (P〉0.05, respectively). In haplotype analysis, the HLA-DRB1*1302-DQB1*0609-DPB1*0201 was significantly higher in the aspirin-induced urticaria (8.0%) than in the aspirin-intolerant asthma (0.7%, P=0.0014) and normal controls (2.0%, P=0.0006).Conclusion These findings suggest that the HLA-DRB1*1302-DQB1*0609-DPB1*0201 may be a strong genetic marker to determine the aspirin-induced urticaria phenotype.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...