ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Defect formation in 4H-SiC(0001) and (000-1) epitaxy is investigated by grazingincidence synchrotron reflection X-ray topography and transmission electron microscopy. Frank-typefaults, which are terminated by four Frank partials with a 1/4[0001] type Burgers vector with the samesign on four different basal planes, are confirmed to be formed by conversion of a 1c threading edgedislocation (TSD) in the substrate as well as simultaneous generation of a 1c TSD during epitaxy. Thecollation between the topography appearance and the microscopic structure and the variety of Frankfaults are shown. Formation of carrot defects and threading dislocation clusters are also investigated
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.267.pdf
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