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  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK and Boston, USA : Blackwell Publishers Ltd.
    Annals of public and cooperative economics 70 (1999), S. 0 
    ISSN: 1467-8292
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 185-189 (1991), S. 595-596 
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Superlattices and Microstructures 15 (1994), S. 483 
    ISSN: 0749-6036
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 657-660 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Photothermal deflection spectroscopy (PDS) at 77 K is described. The sample is immersed in liquid nitrogen with the liquid nitrogen acting as both the cooling and the deflecting medium. The experimentally obtained thermal diffusion length and relative change of refractive index of liquid nitrogen are compared with those of carbon tetrachloride. The construction of the liquid-nitrogen cryostat is the key factor in reducing the noise. A sensitivity of αd=10−4 is obtained for the present system. This technique enables the sensitive measurement of PDS at low temperatures.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5870-5878 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-on xerogels, which are promising candidates for use as interlayer dielectric materials in future microelectronic devices, change from a Newtonian liquid to a solid gel during processing. Since the rheology of the sol may affect the uniformity of the xerogel films produced, here we relate the rheology of a two-step, acid-base catalyzed, sol-gel system to the thickness and porosity profiles across xerogel films of importance to the microelectronics industry. We also analyze the effect of spin speed on the thickness and porosity of the films. Our rheological studies of the xerogel sol demonstrated that the sol changes from Newtonian far from the gel point, to shear thinning close to the gel point. On films spin coated with shear-thinning sols there is a region of uniformity extending for a distance of about 5 mm from the center. The film thickness and porosity are highest in this region and both quantities decrease towards the edge. If the sol is spun in its Newtonian regime, the resulting films are uniform (〈3% thickness and porosity). The predictions of film thickness and uniformity based on simple models for spin coating a Newtonian and truncated power law fluid were found to be in good agreement with the experimental observations. The film thickness was varied from 0.485 to 1.9 μm by adjusting the spin coating speed from 5900 to 1000 rpm. Over this sixfold range of speed, the porosity was almost constant and varied by less than 10% while the thickness varied by about a factor of 4. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2978-2980 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoinduced structural change in hydrogenated amorphous silicon (a-Si:H) has been studied by a sensitive bending detection method using an optical lever. We observed that a-Si:H films show not only thermal expansion due to a photothermal effect but also residual and persistent expansion after light soaking. The volume change is recovered by thermal annealing at 200 °C. A dehydrogenated sample annealed at 550 °C and a microcrystalline sample, in which photoinduced defects are not created, show little photoinduced expansion. The photoinduced expansion and photoinduced defect density show identical time evolution. These results suggest that the photoinduced expansion is related to the photoinduced defect creation. A quantitative evaluation of the photoinduced expansion indicates that the photoinduced structural change is spread over several molecular volumes around a photocreated defect. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2121-2123 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a liquid organic source for n-type doping in hydrogenated amorphous silicon (a-Si:H) is described. Tertiarybutylphosphine (TBP) vapor is added to silane in a rf glow discharge process to produce doped a-Si:H thin films. Impurity levels from parts per million to about 1% phosphorus have been incorporated into the film with this method. Measurements of dark conductivity, photoconductivity, conductivity activation energy, electron spin resonance, and sub-gap optical absorption of the TBP-doped films are compared to those published for films doped with phosphine.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1215-1217 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ultrafast photocarrier dynamics in polysilane alloys, amorphous (SiH2)n, has been studied using the picosecond photoinduced absorption (PA) technique. For excitation below the optical gap, the PA response decays exponentially and is faster at low temperatures. This is interpreted in terms of e-h geminate recombination in the small clusters (∼10 A(ring)) of a-Si:H embedded in the polysilane matrix. The PA response with above-gap excitation is similar to that of conventional a-Si:H; it decays much slower in the form of a power law t −β (β〈1), independent of spectral range between 1.4 and 2.2 eV. This shows that the e-h distance after above-gap photogeneration is larger than the size of the a-Si:H clusters.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Anaesthesia 56 (2001), S. 0 
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: We describe the anaesthetic management of a 72-year-old man with myasthenic syndrome. Pre-operatively, he was treated with 3,4-diaminopyridine and showed a strong hand grip. During general anaesthesia with nitrous oxide and sevoflurane in oxygen, a mechanomyograph and two accelerographs were set up for the hands and left foot to monitor neuromuscular function. Insufficient force and acceleration of contraction with 1 Hz stimulation was observed in the hands. In the foot, the twitches produced by 1 Hz and train-of-four stimulation could barely be detected using the accelerograph, and the train-of-four ratio fluctuated between 70 and 100%. No neuromuscular blocking drugs were used during surgery. After discontinuation of sevoflurane, responses to train-of-four stimulation remained small, but a strong response to tetanic stimulation was observed, with post-tetanic facilitation. Extubation was successful, and recovery from anaesthesia was uneventful. Tetanic stimulation and post-tetanic facilitation are important in monitoring neuromuscular function in patients with myasthenic syndrome whose train-of-four responses are insufficient.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Crystal Growth 115 (1991), S. 515-518 
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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