Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 2687-2689
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We reveal and investigate a possible lifetime-limiting defect in as-grown 6H SiC by optical detection of magnetic resonance (ODMR). This defect is shown to be a deep level center (with an energy level at about Ec−1.1 eV), evident from the related deep photoluminescence emission and a photo-excitation spectrum of the ODMR signal. The fact that this defect has been observed in both bulk crystals and epilayers, regardless of their doping type, indicates that this must be a common and basic defect in 6H SiC. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112962
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