Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles: DFG German National Licenses  (28)
  • 1990-1994  (28)
  • 1993  (28)
  • 1
    Electronic Resource
    Electronic Resource
    Defect band behavior in p-Cd0.96Zn0.04Te by hydrogen passivation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4077-4079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out in order to investigate the dependence of the optical properties of p-Cd0.96Zn0.04Te single crystals on hydrogen passivation conditions. After the p-Cd0.96Zn0.04Te was annealed at 500 °C in a Cd atmosphere for 5 h, the luminescence due to the recombination of the electrons in the conduction band with acceptors (eA°) and to the donor–acceptor pair (DAP) transitions disappeared. After the p-Cd0.96Zn0.04Te was hydrogenated, the intensity of the exciton luminescence increased so that the (eA°) and DAP peaks related to the Cd vacancies disappeared, and the defect band in the low energy range between 1.4 and 1.5 eV also vanished. These results indicate that hydrogen atoms passivated not only shallow donors but also deep acceptor impurities and that the hydrogen atoms were separated from the hydrogenated samples at 400 °C due to their thermal energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352833
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on the bromine concentration in a bromine-methanol etching solution (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4074-4076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out to investigate the dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on various relative concentrations of bromine in a mixture of methanol and bromine. As the bromine concentration increased, the intensity of the luminescence increased; additionally, an exciton bound to a neutral acceptor (A°X) peak at 1.588 eV in p-CdTe was resolved into an exciton bound to neutral donor (D°X) peak at 1.592 eV and an A°X peak. The mixed bands of the 1.574 and 1.546 eV peaks were well resolved by using an etching bromine concentration of 2%; in particular, the intensities of the D°X and 1.574 eV peaks increased as much as five and seven times, respectively. The intensity of the peak at 1.48 eV related to defects also increased. The intensity of A°X at 1.609 eV in p-Cd0.96Zn0.04Te changed slightly with the bromine concentration. The intensities of the luminescence peaks due to the recombination of the electrons in conduction band with acceptors and to the defect relation did not vary. These results indicated that the number of Cd vacancies could be reduced due to the addition of Zn.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352832
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Topographic effect of surface roughness on thin-film flow (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 422-428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article addresses the effect of topographic structure of surface roughness on the flow of a thin film over a rotating disk. Six factors, namely centrifugation, surface tension, viscosity, air-shear, disjoining pressure, and surface roughness, that affect the depletion of the film are considered. Depletion histories of a thin film are given for cases involving deterministic as well as stochastic descriptions of surface roughness. It has been found that surface roughness of the disk plays a significant role in thin-film flow, and different topographic structures of the surface roughness lead to different asymptotic limits of liquid retention. The interplay of topographic parameters such as the height, skewness, and frequency of surface asperities on lubricant retention is also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353866
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Growth of zinc blende-GaN on β-SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6124-6127 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of zinc blende-GaN epitaxial films on β-SiC coated (001) Si substrates using a molecular beam epitaxy approach in which the reactive nitrogen species are generated in a remote 13.56 MHz rf plasma discharge, nitrogen free-radical source. We postulate, based on optical emission spectroscopy studies of the remote plasma, that, in our study, nitrogen atoms are the species primarily responsible for efficient nitridation. The zinc blende nature of the GaN films was confirmed by in situ reflection high-energy electron diffraction, ex situ x-ray diffraction, and ex situ low-temperature photoluminescence analyses. Our zinc blende-GaN film growth rates (∼0.3 μm/h) are higher than those reported to date that involve the use of electron cyclotron resonance type reactive nitrogen sources.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355176
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Positron annihilation study of microvoids in centrifugally atomized 304 stainless steel (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2489-2495 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positron trapping in microvoids was studied by positron-lifetime and positron Doppler line-shape measurements of centrifugally atomized 304 stainless-steel powder, which was hot-isostatically-press consolidated. This material contained a concentration of several times 1023/m3 of 1.5-nm-diam microvoids. Positron annihilation was strongly influenced by the microvoids in that a very long lifetime component τ3 of about 600 ps resulted. The intensity of the τ3 component decreased with decreasing number density of 1.5 nm microvoids. The Doppler peak shape was found to be much more strongly influenced by microvoids than by any other defects such as precipitates or grain boundaries. In particular microvoids produced significant narrowing of the Doppler distribution shape.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354078
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Multicarrier characterization method for extracting mobilities and carrier densities of semiconductors from variable magnetic field measurements (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8324-8335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple, practical method is described to extract the carrier concentration and mobility of each component of a multicarrier semiconductor system (which may be either a homogeneous or multilayered structure) from variable magnetic field measurements. Advantages of the present method are mainly due to the inclusion of both the longitudinal and transverse components of the conductivity tensor and normalization of these quantities with respect to the zero-field longitudinal component of the conductivity tensor. This method also provides a simple, direct criterion by which one can easily determine whether the material under test is associated with a one-carrier or multicarrier conduction. The method is demonstrated for a simple one-carrier system [GaAs single-channel high-electron-mobility-transistor (HEMT) structure] and two multicarrier systems (an InGaAs-GaAs double-channel HEMT structure and two types of carriers present in an InGaAs single-channel HEMT structure). The analysis of the experimental data obtained on these samples demonstrates the utility of the method presented here for extracting carrier concentrations and mobilities in advanced semiconductor structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353424
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Reply to comments of Nordman and Weiland on Horton et al. on "Ion-temperature-gradient-driven transport in a density modification experiment on the Tokamak Fusion Test Reactor'' [Phys. Fluids B 4, 953 (1992)] (1993)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 1034-1035 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The instability growth rates on the tokamak fusion test reactors are commented upon. Comments by Nordman and Weiland 1,3,4 on mode stability and transport are discussed. (AIP)
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.860508
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Electromagnetic effect on the toroidal ion temperature gradient mode (1993)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 4030-4039 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the electromagnetic effects on the toroidal ion temperature gradient mode is presented using the local and nonlocal theories with the full kinetic terms. For the nonlocal study, a numerical code is developed to solve the electromagnetic gyrokinetic equation in the ballooning space. The electromagnetic coupling to the shear Alfvén mode is shown to give a stabilization of the toroidal temperature gradient mode at almost the same plasma pressure as that at which the kinetically modified magnetohydrodynamic (MHD) ballooning mode becomes destabilized. The transitional β value is shown to be lower in the full kinetic description than in the fluid theory. Possible correlations of these stability results with experimental observations are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.860623
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    A low drive voltage electroabsorption modulator using an InGaAs/InP superlattice (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5895-5897 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectral transmission, reflection, and photocurrent absorption data obtained on gas-source molecular beam epitaxy grown InGaAs/InP multiple quantum well (MQW) and superlattice p-i-n diode structures demonstrate, for the first time in this materials system, that similar modulation to MQW structures can be achieved using superlattices, but at significantly lower operating voltages. Specifically, we have observed photocurrent absorption changes of as much as 58%, transmission changes of 8.2%, and reflection changes of 32% for applied biases of only 4 V, in nonresonant modulators operating at a wavelength ∼1.5 μm. These results encourage the possibility of employing such devices in fast, high density optical modulator arrays operating over the 1.3–1.6 μm range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355305
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Fabrication of aluminum oxide thin films by a low-pressure metalorganic chemical vapor deposition technique (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 681-683 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Al2O3 thin films were grown on Si(100) and glass substrates by low-pressure metalorganic chemical vapor deposition using aluminum acetylacetonate and water vapor as source materials. Water vapor played an important role in the oxidation process and produced carbon-free, pure Al2O3 films. The deposition temperature could be lowered to 230 °C. The films were characterized by means of x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, and ellipsometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108838
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...