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  • Articles: DFG German National Licenses  (113)
  • 1995-1999  (61)
  • 1990-1994  (52)
  • 1
    Electronic Resource
    Electronic Resource
    Low-temperature epitaxial growth of cerium dioxide layers on (111) silicon substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8313-8315 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the epitaxial growth of cerium dioxide (CeO2) layers on (111) silicon substrates was studied using ultra-high-vacuum evaporation, varying the substrate temperature in the range between 150 and 900 °C. Characterization using Rutherford backscattering spectrometry and reflection high-energy electron diffraction proved that a CeO2 layer on (111) silicon has considerably good crystalline quality in the range between 200 and 850 °C. It is clarified that the epitaxy can be attained even at surprisingly low temperatures (less than 200 °C). A substrate temperature above 850 °C leads to rather poor crystallinity due to an exponential increase of residual gas pressure. Refractive indices of the epitaxial layers were measured by ellipsometry to be in the range of 2.19–2.79.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347442
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of Acute Fluoxetine Treatment on the Brain Serotonin Synthesis as Measured by the α-Methyl-l-Tryptophan Autoradiographic Method (1995)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 65 (1995), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The effect of treatment with acute fluoxetine, a serotonin reuptake inhibitor, on the rate of serotonin synthesis in the rat brain was studied through autoradiography following intravenous administration of α-methyl-l-[3H]tryptophan. The rate of serotonin synthesis in fluoxetine-treated rats was compared with the rate measured in sham-treated rats (saline injection). Results showed a significant increase in the rate of synthesis in the majority of cerebral structures examined. The greatest increase (given as a percentage of rates in control animals) in the rate of serotonin synthesis was observed in the substantia nigra compacta (344%), hippocampus-CA3 (337%), dorsal hippocampus (283%), and caudate-putamen (232%). Fluoxetine had a less significant effect on the rate of synthesis in the pineal body (44%). Data suggest that acute fluoxetine treatment (30 mg/kg, i.p.) enhances the rate of serotonin synthesis in all the structures of rat brain examined in this work.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.1995.65010250.x
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  • 3
    Electronic Resource
    Electronic Resource
    Serotonin Synthesis Rate Measured in Living Dog Brain by Positron Emission Tomography (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 56 (1991), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: In vivo measurements by positron emission tomography of the brain serotonin synthesis rates in the normal dog, in the dog with increased plasma tryptophan concentration, and in the dog under different arterial oxygen tensions are described. The method described here permits repeated measurements in the same brain for the first time. An increase in the plasma tryptophan concentration from 16.6 to 191.5 and then to 381 μM resulted in close to a linear increase in the brain serotonin synthesis rate. When PaO2 was raised from 76 ± 2 to 106 ± 1 mm Hg, the rate of serotonin synthesis in the dog brain increased from 39 ± 8 to 54 ± 10 pmol g−1 min−1. The estimates of the Michaelis-Menten constants, Kappm and Vmax for the transport of tryptophan through the blood-brain barrier are 303 ± 54 μM and 63 ± 10 nmol g−1, min−1, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1991.tb02575.x
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  • 4
    Electronic Resource
    Electronic Resource
    Late development of antidesmoglein 1 antibodies in pemphigus vulgaris: correlation with disease progression (1999)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 141 (1999), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The coexistence of antidesmoglein 3 (Dsg3) and antidesmoglein 1 (Dsg1) autoantibodies is well described in patients with pemphigus vulgaris (PV); however, there is little evidence of sequential development of these two autoantibodies. Autoantibody responses to Dsg3 and Dsg1 were studied in seven PV patients over time by enzyme-linked immunosorbent assay, using baculovirus expressed recombinant fusion proteins. All patients had anti-Dsg3 IgG antibodies at presentation. Two patients developed anti-Dsg1 later in the course of the disease. The transition in autoantibody profile was associated with disease progression to generalized PV involving mucous membranes and skin in both patients; one patient initially presented with a predominantly mucosal phenotype, the other with herpetiform pemphigus-like features. These findings demonstrate that there is an extension of autoimmune response from anti-Dsg3 only to both anti-Dsg3 and anti-Dsg1 in some patients, which is associated with an alteration in clinical expression in PV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.1999.03209.x
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  • 5
    Electronic Resource
    Electronic Resource
    High powers and subpicosecond pulses from an external-cavity surface-emitting InGaAs/InP multiple quantum well laser (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 807-809 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that surface-emitting lasers operating in an external cavity can produce high average powers, high peak powers, and ultrashort pulses. By optical pumping of InGaAs/InP multiple quantum well samples in an external cavity, we generated 190 mW both in continuous and mode-locked operation at 1.5 μm. Synchronous pumping at 100 MHz yielded 7.7 ps pulses with 15 mW average power. These were shortened to 1. 1 ps pulses with 64 W peak power by chirp compensation using diffraction gratings, and to 710 fs by negative group-velocity dispersion in an optical fiber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104495
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Tunneling spectroscopy for quantum well excitons (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1986-1988 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated a technique of directly measuring the exciton binding energy and the valence band split in the quantum well through a tunneling process. We have also measured the emission efficiency of quantum well heavy-hole excitons and light-hole excitons into the normal direction. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118800
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  • 7
    Electronic Resource
    Electronic Resource
    Degradation mechanism of the AlInAs/GaInAs high electron mobility transistor due to fluorine incorporation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4075-4077 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical degradation of AlInAs/GaInAs high electron mobility transistor (HEMT) due to the fluorine contamination is quantitatively explained through the comprehensive annealing experiments and bias-temperature tests. The thermal degradation rate is found to be mainly determined by the following electrochemical reaction of fluorine with donor species after the quite fast diffusion of fluorine into the AlInAs layer. It is also confirmed that the thermal degradation is stringently affected by the electric field resulting in the one-sided degradation near the anode. These findings are valuable knowledges in improving the reliability of AlInAs/GaInAs HEMT under the dc accelerated life test at high temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117823
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  • 8
    Electronic Resource
    Electronic Resource
    Fine grained Mn–Zn ferrite for high frequency driving : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6861-6863 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Mn–Zn ferrite with a grain size of about 2 μm has been developed for the transformer driven at around 1 MHz. The developed ferrite exhibits considerably lower core losses than a conventional Mn–Zn ferrite with a grain size of about 10 μm at a frequency of 0.5 to 2 MHz. The thin-type transformer using the developed ferrite driven at 1 MHz shows a high efficiency of more than 95% at an output power of 10 to 17 W and a much lower surface temperature rise than the transformer using the conventional ferrite. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367765
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  • 9
    Electronic Resource
    Electronic Resource
    Digital etching of GaAs: New approach of dry etching to atomic ordered processing (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1552-1554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new approach to dry etching of GaAs, digital etching, has been demonstrated. In digital etching, the etchant and an energetic beam, which induces chemical sputtering at the surface, alternately impinge onto the surface. Electrons and Cl2 gas were used as the energetic beam and the etchant, respectively, in the present experiment. Etching rates of 1/3 monolayer/cycle, independent of Cl2 flux and electron current density, were obtained. The present results show that an inherent self-limiting mechanism is involved and that the etching process is limited by the adsorption of etchant. This digital etching technique is expected to be applied to the fabrication of well-defined quantum wire and quantum box structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103171
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial growth of CeO2 layers on silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1332-1333 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CeO2 layer was epitaxially grown for the first time on both (111) and (100) silicon substrates by vacuum evaporation. Characterization using Rutherford backscattering and reflection high-energy electron diffraction proved that a CeO2 layer on (111) Si has considerably good crystalline quality, whereas that on (100)Si contains a large amount of crystallographic defects, especially in the vicinity of the CeO2/Si interface. Auger electron spectroscopy analysis showed a uniform concentration distribution of Ce and O throughout the epitaxial layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103202
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