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  • 1
    Electronic Resource
    Electronic Resource
    Partitioning behavior of Al in a nanocrystalline FeZrBAl soft magnetic alloy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 439-442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atom probe field ion microscopy was employed to investigate the distribution of Al in a nanocrystalline Fe88Zr7B3Al2 soft magnet with optimal magnetic performance. The atom probe concentration depth profiles show that the Al atoms preferentially partition into the residual amorphous phase, and the partitioning factor of Al is approximately five times larger in the amorphous phase than in the bcc Fe phase. Based on the experimental results, the beneficial effect of the addition of Al on the soft magnetic properties is attributed to the change of the inherent magnetostriction constant of the residual amorphous phase induced by Al partitioning. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371881
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  • 2
    Electronic Resource
    Electronic Resource
    Distribution of Nb and Co in an α-Fe/Nd2Fe14B-type nanocomposite (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6928-6930 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atom probe field ion microscopy was employed to investigate the distribution of the alloying elements in a nanocrystalline Fe76.5Nd8Co8B6Nb1.5 (at. %) alloy consisting of soft magnetic α-Fe and hard magnetic Nd2Fe14B. It was found that Co atoms prefer to partition into Nd2Fe14B phase. The partitioning factor of Co in the hard magnetic phase is approximately 2 with respect to the soft magnetic phase, α-Fe. Atom probe concentration and integrated depth profiles showed that the Nb atoms segregate at the interfaces between the soft and the hard magnetic phases. Based on the atom probe results, the beneficial effects of Nb and Co on the microstructure and the hard magnetic properties of the nanocomposite are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317235
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  • 3
    Electronic Resource
    Electronic Resource
    An efficient gene transduction system for studying gene function in primary human dermal fibroblasts and epidermal keratinocytes (2003)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 28 (2003), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary One of the critical challenges for cellular genetic studies in primary human skin cells is lack of a gene delivery system that provides efficient transduction and sustained expression of the transgenes. Due to the limited time of survival in culture, the processes of drug selection and clonal expansion for establishing gene stably expressing cell lines are not a realistic option for primary skin cells. We have examined various gene transduction techniques in primary dermal fibroblasts and epidermal keratinocytes of human skin. We report here that vectors based on the human immunodeficiency virus (HIV, lentivirus) offer more than 90% gene transduction efficiency and sustained expression of transgenes in both human skin cell types. In contrast, most of the commonly used techniques have at best 30% transduction efficiency in these cells. Using two previously reported migration control genes, protein kinase Cδ and p38α-MAPK, as examples, we provide evidence that the unprecedented efficiency of the lentiviral system enables a clear detection of the genes' dominant negative effects, which are otherwise greatly compromised by ordinary transfection techniques. We believe that a wide application of this gene transduction system will greatly benefit studies of gene function in human skin cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2230.2003.01191.x
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  • 4
    Electronic Resource
    Electronic Resource
    Room-temperature midwavelength two-color infrared detectors with HgCdTe/CdTe multilayer structures by metal-organic chemical-vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4787-4789 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-color photoconductive detectors in the 3–5 μm wavelength range using multilayer undoped n-type Hg1−xCdxTe heterostructures have been demonstrated at room temperature. These heterostructures, consisting of three or four Hg1−xCdxTe layers separated with CdTe layers, were grown by the metal-organic chemical-vapor-deposition (MOCVD) technique. The quality of MOCVD films was verified by near-theoretical values of the minority-carrier lifetime at 300 K, ranging from 0.8 to 4.7 μs depending on the x value. The Hg1−xCdxTe layers are either detectors or filters, and the CdTe layers serve as insulating separators. The concept of using the exponential absorption tails of two Hg1−xCdxTe layers with different band gaps to form an absorption band was verified by the difference in the photoconductive spectral responses between backside and frontside illumination. Two different multilayer heterostructures with two-color peaks at 3.2/3.8 μm and 3.7/4.6 μm, respectively, were studied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359759
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  • 5
    Electronic Resource
    Electronic Resource
    Studies of V, Nb, Cr, and Zr substituted 2:17 compounds and their carbides using neutron diffraction : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4542-4544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Samples of Nd2Fe17−xTxCy with T=V, Nb, Cr, and Zr were prepared by melting of the constituent elements including C and studied by neutron diffraction. Comparing with their uncarbided counterparts, we found that the substituents transfer, more or less, from the 6c site to the 18f and 18h sites with the introduction of C atoms. This behavior appears to relate to the electronegativities between the C atoms and the early transition series elements because the 18f and 18h sites are near neighbors of the interstitial C site. However, the C effects in the V, Nb, Cr, and Zr samples are not as strong as those in Ti samples. SQUID measurements show that the Curie temperatures of these samples depend on both the interstitial C atoms and the substituents. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365421
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1208-1210 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained-layer (111)B In0.2Ga0.8As/GaAs p-i-n quantum well structures grown with exciton transitions well resolved at room temperature have been studied by photoreflectance spectroscopy. Using the reduced mass deduced from experiments, the built-in electric field in the barrier region is obtained from the above band-gap Franz–Keldysh oscillations. The strain-induced piezoelectric field is then determined directly from a comparison of the periods of Franz–Keldysh oscillations in different samples. Numerical solutions for the exciton transitions from the derived potential profiles are in good agreement with the experimental results. The piezoelectric constant is also determined using the piezoelectric field. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121015
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  • 7
    Electronic Resource
    Electronic Resource
    Highly insulative barium zirconate-titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2659-2661 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline thin films of Ba(ZrxTi1−x)O3 with x=0–0.4 and a thickness of ∼180 nm were deposited on platinum-coated silicon substrates by rf magnetron sputtering at 500 °C. Ba-rich targets were used to prepare films of stoichiometric composition. The film having x=0.12 exhibited a satisfactory dielectric property of dielectric constant, k≈300, and dissipation factor, tan δ〈0.02, at frequencies from 103 to 106 Hz under ambient temperatures ranging from 20 to 180 °C. More importantly, the film showed a very stable and highly insulative characteristic against applied voltage. The leakage current density J increases only smoothly to a value less than 10−7 A/cm2 followed by an Ohmic relation of J=σE with σ=1.4×10−14 (Ω cm)−1 up to an extremely high electric field E of 5.6 MV/cm without any sign of abrupt increase of leakage current or electrical breakdown. Also, no time-dependent electric degradation was observed for the film subjected to an electric field as high as 5 MV/cm at room temperature up to 3600 s of measurement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117550
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of ion gettering effects in high-temperature superconducting oxide material (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1629-1630 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion gettering effect has been observed in high-temperature superconducting YBa2Cu3O7 material. Silicon ions were implanted into the material and subsequent high-temperature annealing produced ion movement from a low concentration region to a higher concentration region where the damage of the crystal structure is severe. This gettering effect could be used to make a superconductor-nonsuperconductor-superconductor trilayer structure within a single YBCO film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117053
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  • 9
    Electronic Resource
    Electronic Resource
    A neutron diffraction structural study of R2Fe17−xAlx(C) (R=Tb, Ho) alloys : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6914-6916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The title compounds were confirmed to have the Th2Zn17 type rhombohedral structure (space group R3¯m) except for Ho2Fe16Al and Ho2Fe15Al2 which have the Th2Ni17 type hexagonal structure (space group P63/mmc) while Ho2Fe13Al3 is a mixture of the two phases with the hexagonal phase dominant. A larger unit cell favors the formation of an ordered rhombohedral phase rather than a disordered hexagonal phase. Both the substitution of Fe by Al and the insertion of C can expand the cell and lead to the formation of an ordered rhombohedral phase. The site preferences of Al are somewhat different with and without C. In both series, C is mainly found at the 9e interstitial site. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367567
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  • 10
    Electronic Resource
    Electronic Resource
    Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1595-1601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs/GaAs (111)B quantum well p-i-n structures grown by gas source molecular beam epitaxy have been investigated with a photoreflectance technique. Using the reduced mass deduced from experiments, the built-in electric field is obtained from the above band-gap Franz–Keldysh oscillations (FKOs). The strain-induced piezoelectric field is then determined directly from the comparison of the periods of FKOs in different samples. Numerical solutions for exciton transition energies with the experimentally derived potentials are in good agreement with experimental results. Hence, the piezoelectric constant can be determined using the piezoelectric field. The temperature dependences of the quantized energy levels indicate that the influence of temperature on exciton transitions is essentially the same as that of the gaps of the relevant bulk constituent materials. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368229
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