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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1578-1584 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied interfacial reactions in Co/amorphous Si(a-Si) multilayers by transmission electron microscopy. We found that an intermixed layer of amorphous cobalt silicide formed in the as-deposited state. To explain the solid-state amorphization reaction, two parameters were used. They were the thermodynamic driving force (heat of formation) and the interfacial energy. The initial amorphization reaction in Co/a-Si multilayers was thermodynamically and kinetically favored. However, the formed amorphous interlayer remained about 1 nm thick and did not grow thicker with increasing modulation period and annealing temperature. The reason for this phenomenon was that the amorphous interlayer acted as a diffusion barrier to impede the amorphization reaction in Co/a-Si multilayers. Co2Si phase was always the preferred phase in the crystallization process for different average compositions of the multilayers. The mechanism that controlled the phase selection in Co/a-Si interfacial reaction was interpreted by using the model of modified heat of formation.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7217-7221 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion-induced solid-state amorphization reaction (SSAR) in polycrystalline Ni/amorphous Si multilayers has been studied using an in situ x-ray diffraction technique together with transmission electron microscope observations. The amorphization reaction was found to occur both on the Ni/Si interfaces in terms of a planar-layer growth model and along the grain boundaries in the Ni sublayers. Thermodynamic and kinetic interpretations for the SSAR at grain boundaries are presented and an amorphous growth model is also suggested for elucidating the SSAR in polycrystalline Ni/amorphous Si multilayers.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4313-4318 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial reaction in Ni and amorphous Si (a-Si) multilayers (Ni/a-Si) has been studied. Transmission electron microscope observation was used to monitor the progress of the solid-state reaction. It was found that amorphous Ni-silicide phase [a-(Ni,Si)] is the first phase formed in the Ni and a-Si interfacial reaction. A relatively large composition range for the amorphous phase exists in these Ni/a-Si multilayers. In the as-deposited Ni/a-Si multilayers with shorter modulation period, the uniform a-(Ni,Si) phase forms at least in the composition range of 25–62 at. % Ni. These results are consistent with predictions from the calculated Gibbs free-energy diagram. The δ-Ni2Si phase is the preferred phase in the crystallization process of a-(Ni,Si) even for the equiatomic Ni/a-Si multilayers. The mechanism that controls phase selection in the Ni/a-Si interfacial reaction is discussed using nucleation theory. A nucleation control model for phase selection is proposed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2471-2474 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Little is known about the interdiffusion in the amorphous Ni–Si multilayer due to the lack of suitable experimental method. In this paper, the interdiffusion phenomena in the amorphous Ni–Si multilayer are investigated by an in situ x-ray diffraction technique. The temperature-dependent interdiffusivity obtained by monitoring the decay of the first-order modulation peak as a function of annealing time can be described in terms of the Arrhenius relation. The effective interdiffusivities can be expressed as De(T)=2.13 ×10−17 exp[−(0.61±0.02)/kBT] m2/s (423–613 K). A retarded interstitial diffusion mechanism is suggested to explain the diffusion process in the amorphous multilayer films.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 9760-9764 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3410-3421 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interconnects are susceptible to solid diffusion under residual stress, electric current, and elevated temperature. As atoms diffuse, voids nucleate, drift, and enlarge. At some point, the voids of rounded shape can collapse to narrow slits and sever the interconnects. The fatal slits are often found to be transgranular, i.e., each slit cuts across a single grain. They have raised many concerns, but the underlying mechanism has remained unclear. It is proposed that a void changes shape due to surface diffusion under the combined action of surface energy, elastic energy, and electric current. The void will be rounded if surface energy prevails, but will collapse to a slit if the elastic energy or the electric current prevails. A cylindrical void in an infinite crystal under biaxial stresses, but under no electric current, is analyzed. Four things are done, as follows: (1) A suitable thermodynamic potential is minimized and maximized to select, among a family of ellipses, equilibrium void shapes. The bifurcation diagram consists of a subcritical pitchfork and two Griffith cracks. (2) A void under biased stresses is analyzed to illustrate the effect of imperfections. (3) Exact initial bifurcation modes are determined. The critical loads for the successive modes are closely separated, indicating that the shape evolution will be sensitive to initial imperfections. (4) A variational principle for shape evolution under stress, current and surface energy is identified. Stress-induced evolution time is estimated by using this variational principle.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2026-2028 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality ZnSe epilayers have been successfully grown on a Ge (311) substrate by molecular beam epitaxy. Reflection high energy electron diffraction indicated antiphase domain free growth. The x-ray diffraction rocking curve demonstrated a full width at half maximum as narrow as 198 arcsec, which is the narrowest linewidth reported to date for a ZnSe/Ge heteroepitaxy. Our results indicate that ZnSe/Ge heterostructures are promising for optoelectronic device applications.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3690-3691 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlAs/AlGaAs X-valley multiquantum-well detectors grown on Si substrate are reported. Normal-incidence infrared-absorption measurements were performed on [113]- and [115]-oriented samples grown on Si substrate at a wavelength range of 5–20 μm. An absorption peak was observed in the [113]-oriented quantum wells with an infrared-absorption coefficient of α=1400 cm−1 (quantum efficiency η=13%); similar results were attained with the [115] sample. The experimental results indicate the potential of these novel structures as normal-incidence infrared photodetectors. The results point to the possibility of integrating photodetectors and signal processing circuits on the same Si substrate.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5533-5537 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The barrier potential design criteria in multiple-quantum-well (MQW) -based solar-cell structures is reported for the purpose of achieving maximum efficiency. The time-dependent short-circuit current density at the collector side of various MQW solar-cell structures under resonant condition was numerically calculated using the time-dependent Schrödinger equation. The energy efficiency of solar cells based on InAs/GayIn1−yAs and GaAs/AlxGa1−xAs MQW structures were compared when carriers are excited at a particular solar-energy band. Using InAs/GayIn1−yAs MQW structures it is found that a maximum energy efficiency can be achieved if the structure is designed with barrier potential of about 450 meV. The efficiency is found to decline linearly as the barrier potential increases for GaAs/AlxGa1−xAs MQW-structure-based solar cells.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7559-7561 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The undercooling and nucleation of an Al65Cu20Fe15 alloy have been investigated with a 1.2-m-long drop tube. Melted droplets solidified either in vacuum or in helium. Various size samples in the forms of a globule, a fine fiber, and an irregular splat were collected at the bottom of the tube. X-ray phase identification results indicated that the CsCl-type cubic phase with a lattice parameter of 2.94 A(ring) and Al-Cu-Fe icosahedral quasicrystalline phase coexist in most specimens. However, the amount of each phase differs in various size samples due to the different cooling rates and undercoolings. It can be concluded that deep undercooling is beneficial to the formation of the Al-Cu-Fe icosahedral phase. In addition, in some rapidly solidified fine fibers (〈105 K/S), the Al-Cu-Fe ternary amorphous phase was also observed by high resolution transmission electron microscopy. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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