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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4459-4461 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical properties of titanium dioxide (TiO2) thin films grown on n-type InP(100) substrate by low-pressure metal-organic chemical-vapor deposition have been studied with postannealing. The thin films of TiO2 were deposited at a low temperature of 350 °C using titanium isopropoxide and oxygen. After a postgrowth annealing by the rapid thermal annealing method at a temperature of 850 °C for 15 s, the TiO2/InP structure of only the anatase phase with (101) and (200) peaks was observed by x-ray diffraction analysis. No interface reaction between TiO2 and InP was detected by Auger electron spectroscopy depth profiling. From capacitance–voltage measurement of the Al/TiO2/n-InP structure, the interface density of states at midgap energy and the dielectric constant were approximately low 1012 eV−1 cm−2 at midgap energy and about 50, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7756-7760 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation of twin structures in NdP5O14 single crystals has been undertaken using white-beam synchrotron x-ray topography. The so-called a-type twins along the a axis are clearly revealed in the topographs. The displacements of the images that arise from the twins are directly measured in different topographs. With the measured values, the monoclinic distortion angle δ(δ=β−90°) is calculated, which is in good agreement with the unit cell parameters. A fine-beam Laue diffraction pattern of the twin has also been taken which is well consistent with its simulation. From these results, the twin structures of NdP5O14 are discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1638-1641 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a metal vapor vacuum arc ion source with high current, a study has been made of the modification of copper thin films by implantation. It was found that a shallow implantation of Cr, Al, and Mg could effectively enhance the oxidation resistance of copper films, but not have significant influence on their conductivity since the implanted species just concentrate on the surfacial layer of the films. By x-ray diffraction, Rutherford back-scattering, and scanning electron microscopy, the effects of Cr ion implantation on the evolution of structures and morphologies of copper oxides on the copper films were presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 811-814 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline gallium arsenide films of 10-μm thickness deposited on tungsten/graphite substrates by the reaction between gallium, hydrogen chloride, and arsine have been used for the fabrication of thin-film homojunction solar cells. The major problem associated with polycrystalline gallium arsenide thin-film cells is the grain-boundary shunting effect. In order to prepare solar cells with conversion efficiency higher than 10%, gallium arsenide films with large grains are necessary. Unlike gallium arsenide, germanium films can be easily recrystallized to enhance the grain size. Thin-film gallium arsenide solar cells of the p+/n configuration with an AM1 efficiency of about 10% have been prepared using recrystallized germanium and large-grain germanium substrates.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4268-4272 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon (a-Si:H) films have been deposited on Corning 7059 glass and other substrates by the thermal decomposition of disilane in a helium flow. The deposition rate of a-Si:H films in a He atmosphere has been found to be significantly higher than that deposited in a hydrogen atmosphere under the same conditions. The a-Si:H films deposited in a He atmosphere showed improved structural properties as compared with those deposited in a hydrogen atmosphere. The properties of a-Si:H films deposited in a helium atmosphere such as density, photoconductivity, minority-carrier diffusion length, gap-state density, etc., have been determined. These films appear to have better electronic properties than the chemical-vapor-deposited a-Si:H films heretofore reported.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5386-5393 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to understand the radiative recombination mechanisms in silicon oxides, photoluminescence properties (PL) of H-rich amorphous silicon oxide thin films grown in a dual-plasma chemical vapor deposition reactor have been related to a number of stoichiometry and structure characterizations (x-ray photoelectron spectroscopy, vibrational spectroscopy, and gas evolution studies). The visible photoluminescence at room temperature from a-SiOx:H matrixes with different compositions, including different bonding environments for H atoms, has been studied in the as-deposited and annealed states up to 900 °C. Three commonly reported PL bands centered around 1.7, 2.1, and 2.9 eV have been detected from the same type of a-SiOx:H material, only by varying the oxygen content (x = 1.35, 1.65, and 2). Temperature quenching experiments are crucial to distinguish the 1.7 eV band, fully consistent with bandtail-to-bandtail recombination, from the radiative defect luminescence mechanisms attributed either to defects related to Si–OH groups (2.9 eV) or to oxygen-vacancy defects (2.1 eV). In the latter case, a red-shift of the PL peak energy as a function of annealing temperature is probably attributed to some matrix-induced strain effect. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 447-448 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an absolute measurement of a two-photon absorption (TPA) coefficient of C60 thin film at 633 nm. Large values of β≈4.4 cm/W were determined. A nearly resonant TPA transition around the 3.76 eV absorption region was discussed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 43 (1978), S. 0 
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Though poor precision is inherent in many organoleptic methods, the widely reported discrepancies of the Scoville results encountered in both within-and between-laboratories are partly attributable to the “3 out of 5“rule,” which is not consistent with the standard definition of sensory threshold. Greatly improved precision is shown in this paper by the application of the Kaerber mean and standard deviation to the response data, generated by algebraic combinations and obtained experimentally. Further improvement can be made with the increased number of dilutions presented. Since, finally, the response magnitude seems better correlated to the logarithm of concentration, it is suggested that the present dilution schedule of the Scoville method be revised to logarithmic scale.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Objectives The International Study of Asthma and Allergies in Childhood (ISAAC) questionnaires have shown that the prevalence of childhood asthma is increasing worldwide. Although Asian countries used to have lower prevalence rates of allergic disease than Western countries, this prevalence is increasing in several Asian countries. To determine whether the prevalence of childhood asthma is changing in Korean adolescents, we compared findings from nationwide cross-sectional surveys in 1995 and 2000 on populations of middle-school children using the Korean version of the ISAAC questionnaire.Methods We developed Korean versions of the ISAAC written (WQ) and video (AVQ) questionnaires for allergic diseases. In 1995, the enrolled population consisted of 15 481 children, ages 12–15, and encompassing all three grades in middle school, selected from 34 schools across the nation; the response rate was 97.3%. In 2000, 15 894 children were selected from 31 of the same schools, and the response rate was 96.4%. The SAS system version 8.0 was utilized for all statistical analyses.Results The WQ showed that the lifetime and 12-month prevalence of wheeze did not change from 1995 to 2000. While the 12-month prevalence rates of sleep disturbed by wheezing and night cough increased, the rates of severe attack of wheezing and exercise-induced wheeze did not change, over this period of time. The lifetime prevalence of asthma diagnosis, however, increased significantly, from 2.7% in 1995 to 5.3% in 2000, as did the 12-month prevalence of asthma treatment, from 1.0% in 1995 to 1.9% in 2000. The AVQ also showed increases in the lifetime and 12-month prevalence rates of wheeze at rest, exercise-induced wheeze, nocturnal wheeze, nocturnal cough, and severe wheeze over this period of time. These were especially because of significant increases in the Provincial cities of Korea. Interestingly, the 12-month prevalence of wheeze was consistently high in Cheju with low air pollution indices, whereas this rate was low in Ulsan and Ansan with very high air pollution indices. Risk factor analysis showed that body mass index (BMI), passive smoking, and living with a dog or cat, but not air pollution, were associated with higher risk of wheeze.Conclusions In the 5-year period from 1995 to 2000, the prevalence of asthma symptoms has increased in Korean adolescents, much of it because of increases in Provincial Centers. BMI, passive smoking, and living with a dog or cat are important risk factors. Environmental factors other than air pollution may be associated with increases in asthma, especially in Provincial Centers.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    FEBS Letters 285 (1991), S. 145-148 
    ISSN: 0014-5793
    Keywords: Protein phosphatase inhibitor ; Smooth muscle contraction ; Tautomycin
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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