Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1480-1484 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis has been carried out of optical heterodyne conversion with an interdigitated-electrode photomixer made from low-temperature-grown (LTG) GaAs and pumped by two continuous-wave, frequency-offset pump lasers. The analytic prediction is in excellent agreement with the experimental results obtained recently on a photomixer having 1.0-μm-wide electrodes and gaps. The analysis predicts that a superior photomixer having 0.2-μm-wide electrodes and gaps would have a temperature-limited conversion efficiency of 2.0% at a low difference frequency, 1.6% at 94 GHz, and 0.5% at 300 GHz when connected to a broadband 100 Ω load resistance and pumped at hν=2.0 eV by a total optical power of 50 mW. The predicted 3-dB bandwidth (193 GHz) of this photomixer is limited by both the electron-hole recombination time (0.6 ps) of the LTG-GaAs material and the RC time constant (0.5 ps) of the photomixer circuit.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 92 (1985), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary. A new form of obstetric imaging using nuclear magnetic resonance (NMR) has been assessed for use in pregnancy. A total of 92 examinations were performed in 62 women during the second and third trimesters in both normal and complicated pregnancies including 14 with diabetes, six with pre-eclampsia and four with intrauterine growth retardation. Our experience has shown that NMR imaging gives excellent differentiation of both maternal and fetal tissues, and because of complete penetration both superficial and deep structures have been clearly identified. The best fetal images were obtained most consistently in the third trimester providing good detail of brain, lungs, liver, heart, bladder, subcutaneous fat, placenta and umbilical cord while maternal tissues were clearly seen at all gestations. As this form of imaging uses no ionizing radiation it offers an alternative means with unique capabilities for investigating pregnancy.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2954-2967 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The free energy model previously developed for the prediction of the bonding in amorphous Si-based alloys is extended here to amorphous carbon alloys, a-CxH1−x, containing carbon atoms with sp3 and sp2 hybridization. Predictions have been made for the bonds present in the alloys, with the case of "chemical'' ordering at T=0 K corresponding to phase separation into separate C (sp3) and C(sp2) regions. For T(approximately-greater-than)0 K phase separation is eliminated and there is no evidence for the clustering of graphitic carbon, indicating the importance of the configurational entropy in influencing the bonding in the alloys. Hydrogen atoms are predicted to bond preferentially to C (sp3) atoms for all T. The sp3/sp2 ratio is predicted to increase with increasing H content, as observed experimentally, and also with increasing T due to entropy effects. Predictions have been made for the distribution of bonds in tetrahedral C(sp3)- and planar C(sp2)=C(sp2)-centered units. It is found that essentially no aromatic or graphitic structures are present in typical alloys. The a-CxH1−x alloys have been proposed to consist of five amorphous components: diamondlike, graphitic, polymeric, olefinic, and mixed diamond–graphitic (d–g) components. It is predicted that the polymeric and mixed d–g components dominate in typical plasma-deposited alloy films while the mixed d–g component dominates in hydrogen-free a-C films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3068-3075 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: IR and UV-VIS optical spectroscopy have been used to study the transformations of the properties of diamondlike carbon films following isothermal anneals from Ta=300 to 650 °C. Several processes due to the annealing have been observed: (1) the increase of the absorption due to vibrations of unsaturated bonds of C(sp2) atoms at ∼1600 cm−1 for Ta≥350 °C, (2) the decrease of the absorption due to C(sp3)–H bonds at Ta≥350 °C, and (3) the reduction of the optical energy gap. Analysis of the kinetics has shown that the dehydrogenation of the alloys and the formation of unsaturated bonds may proceed independently. The reduction of the energy gap is related to the formation of C(sp2) atoms with unsaturated bonding which occurs mostly in hydrogen-free regions. Intensive graphitization of the films occurs above Ta=650 °C. Transformations of C–H bonds are proposed to occur via fast rearrangement in stressed regions leading to formation of new C(sp2)–H bonds and formation of methane molecules as the most important product of the anneals inside the polymeric highly hydrogenated regions in the alloys. It appears that both bond removal and reordering have taken place as a result of annealing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2153-2155 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the change in structural quality of as-grown GaAs layers deposited at temperatures between 180 and 210 °C by molecular beam epitaxy was performed using transmission electron microscopy, double-crystal x-ray rocking curves, and particle-induced x-ray emission. We found that the crystal quality was correlated strongly with growth temperature near 200 °C. The lattice parameter and the amount of As incorporated in the layer were observed to increase at lower growth temperatures. After exceeding a certain growth-temperature-dependent layer thickness, large densities of pyramidal-type defects are formed, which at lowest growth temperature result in the breakdown of crystallinity and in columnar polycrystalline growth. The lattice expansion is ascribed to the excess As in the layers. The mechanisms of breakdown of crystallinity are discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 58 (1986), S. 656-658 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 903-905 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial growth of diamond films in a microwave plasma reactor has been studied using in situ two-color infrared pyrometry. Analysis of the observed oscillations of the apparent temperature has yielded the substrate temperature and also the instantaneous film growth rate and rms surface roughness σ. Two distinct regimes of growth have been clearly identified: an initial period of rapidly increasing σ before the diamond nuclei coalesce, followed by a slower increase of σ with thickness as the continuous film grows further. The differing initial roughnesses and emissivities of Si and Mo substrates have been shown to have important effects on the growth of diamond. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1881-1883 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high degree of crystalline perfection of these layers. For a layer grown at 200 °C and unannealed, x-ray diffraction revealed a 0.1% increase in the lattice parameter in comparison with bulk GaAs. For the same layer, EPR detected arsenic antisite defects with a concentration as high as 5×1018 cm−3. This is the first observation of antisite defects in MBE-grown GaAs. These results are related to off-stoichiometric, strongly As-rich growth, possible only at such low temperatures. These findings are of relevance to the specific electrical properties of low-temperature MBE-grown GaAs layers.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 890-892 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel material deposited by molecular beam epitaxy at low substrate temperatures using Ga and As4 beam fluxes has been used as the active layer for a high-speed photoconductive optoelectronic switch. The high-speed photoconductive performance of the material was assessed by fabricating two devices: an Auston switch and a photoconductive-gap switch with a coplanar transmission line. In a coplanar transmission line configuration, the speed of response is 1.6 ps (full width at half maximum) and the response is 10 to 100 times greater than that of conventional photoconductive switches. Since the material is compatible with GaAs discrete device and integrated circuit technologies, this photoconductive switch may find extensive applications for high-speed device and circuit testing.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 475-478 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the optical absorption of a-Si:H/a-SixN1−x :H multilayers has been developed which takes into account the effects of alloying in the interface regions between the a-Si:H and a-SixN1−x :H layers. Four different spatial variations of the film composition at the interfaces have been considered: abrupt, step, linear, and parabolic. The optical response of the interface regions is proposed to arise from Si-centered tetrahedra, containing both Si and N atoms. Calculations of the dielectric function of the multilayer using the appropriate effective medium approximation have indicated that alloying at the interfaces leads to a lower optical absorption and a broadening of the multilayer absorption edge as compared to multilayers in which interface alloying is ignored. However, interface alloying apparently does not contribute appreciably to the observed increase in the optical energy gap of the a-Si:H layer in the limit of decreasing layer thickness.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...