ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Propagations of dislocations in 4H-SiC were evaluated three-dimensionally by a planarmapping EBIC method with the control of accelerating voltages. Screw dislocation (SD), edgedislocation (ED), and basal plane dislocation (BPD) were clearly observed through the 20nm-thickNi Schottky contact on SiC. From the analysis of BPD extended on {0001}, the intensity of EBICsignals was proportional to the depth position of defect. In addition, the information of thedecomposition and combination for dislocations can be obtained from the fluctuation of EBIC signalalong the scanning position
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.423.pdf
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