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  • 1985-1989  (5)
  • 1987  (5)
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  • 1985-1989  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2012-2015 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical-absorption spectra in Bi12SiO20 have been measured precisely at various hydrostatic pressure up to 40 kbar, and analyzed in the region below the fundamental absorption edges. It can be seen that the optical-absorption coefficients plotted semilogarithmically vary linearly with photon energy below the fundamental absorption edges at each hydrostatic pressure. The steepness of the absorption edge decreases with increasing pressure up to 10 kbar and then it shows constant value. The broad shoulders below 3.1-eV photon energy are shown, and the optical-absorption coefficients in those regions increase with increasing pressure up to 10 kbar.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 434-436 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical-absorption spectra in the semiconductor CdInGaS4 have been measured precisely at various hydrostatic pressures up to 20 kbar, and analyzed in the region below the fundamental absorption edges. It can be seen that the absorption coefficients plotted semilogarithmically vary linearly with photon energy below the fundamental absorption edges at each hydrostatic pressure. The steepness of the absorption edge is proportional to the inverse of hydrostatic pressure.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 732-734 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal expansion of the compound semiconductors CdIn2S4 and CdInGaS4 has been investigated on single crystals between 120 and 570 K. At high temperatures the anharmonic effects in lattice vibrations of the (parallel)c-axis direction in CdInGaS4 is similar to that in the ⊥c-axis direction, and that in CdIn2S4 is similar to that in CdInGaS4 in spite of the diverse crystal structures. The characteristic temperature (corresponding to Debye temperatures) for CdIn2S4 is 175±10 K, and for CdInGaS4 it is 200±10 K ((parallel)c axis) and 161±10 K (⊥c axis), respectively.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2065-2066 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical absorption coefficients in Bi12SiO20 have been measured precisely at various hydrostatic pressures up to 40 kbar at room temperature. The interband gap for the indirect allowed transition was found to have a pressure coefficient (∂Eg/∂P)T of −1.20×10−6 eV/bar. Using the result of the pressure coefficient, it was indicated that the electron-phonon interaction was dominant in the temperature dependence of the indirect energy gap in Bi12SiO20.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 20 (1987), S. 406-410 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Results are reported of an investigation using synchrotron radiation into the effects of temperatures up to 1173 K on pressure-induced phase transitions in phosphorus. A cubic type multi-anvil press was employed and a diffraction pattern in an energy-dispersive mode was taken for a period of time, typically 200 s, without suffering from a deterioration of the sample material. The pressure of the first transition, orthorhombic–rhombohedral (As-type), decreases with increasing temperature at a rate of 2.3 MPa K−1 and the As-type structure is stable at a pressure as low as 2.6 GPa at a temperature of 1073 K. The volume discontinuity at the transition, ΔV, is 10% at room temperature and remains almost unchanged with increasing temperature. The axial ratio c/a, when the rhombohedral structure is referred to the hexagonal system, changes mostly with pressure but only slightly with temperature, approaching √6 = 2.45 on going to the second transition, rhombohedral–simple cubic. The pressure of this transition, in contrast to the first one, is independent of temperature but ΔV at this transition, 3.7%, continuously decreases with increasing temperature.
    Type of Medium: Electronic Resource
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