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  • 1985-1989  (5)
  • 1988  (1)
  • 1987  (4)
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  • 1985-1989  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Preparation and substrate reactions of superconducting Y-Ba-Cu-O films (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1027-1029 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple metal-target dc magnetron sputter deposition of a metallic YBa2Cu3 alloy in pure Ar followed by ex situ oxygen annealing was used to prepare superconducting films on various substrates. This work particularly examines film-substrate reactions which are degrading to superconductivity. Better superconductors were obtained using predeposited buffer layers, notably on cubic zirconia and MgO substrates covered with Ag and Nb. Best films have Tc=80 K, metallic resistivities with resistance ratio(approximately-greater-than)2, and critical current density (approximately-less-than)10 kA cm−2 at 4.2 K. Normal-state resistivity measurements were made for O2 furnace temperatures up to 850 °C. Procedures for lithographically patterning these films are also described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98819
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial yttrium silicide on (111) silicon by vacuum annealing (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 311-313 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial YSi2−x films have been fabricated. The smooth 430-A(ring)-thick silicide films on Si (111) substrates were characterized by a Rutherford backscattering minimum channeling yield χmin =8%, establishing YSi2−x as one of the best known epitaxial silicides. Results of electrical measurements are also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98453
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Study of thermally oxidized yttrium films on silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 919-921 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and structural characteristics of thin thermally oxidized yttrium layers on Si and on Si covered with 40 A(ring) of SiO2 have been investigated. The factor of ∼ four advantage in the dielectric constant of Y2O3 over SiO2, coupled with extremely low leakage current density of better than 10−10 A/cm2 in a field of 1.9 MV/cm, sufficiently high breakdown strength, and well-behaved capacitance-voltage characteristics makes Y2O3 a viable candidate for Si very large scale integration applications, at least in passive devices. High-resolution transmission electron microscopy reveals the structure of the composite dielectric and provides good agreement between calculated and experimental capacitance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98801
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Auger electron spectroscopy, transmission electron microscopy, and scanning electron microscopy studies of Nb/Al/Nb Josephson junction structures (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5089-5097 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al films deposited on Nb can be oxidized and used to make Josephson junction devices. We studied the structure of Al films deposited under "warm'' (estimated to be near 200 °C) and "cold'' (near room temperature) conditions because the cold films produced better Josephson junction devices. For the warm case, the Al film was composed of islands with open channels between them, which we attribute to a high mobility of the Al atoms that lowers the island nucleation density. The Nb surface was extremely flat, which we ascribe to the high surface atom mobility at the higher deposition temperature. The cold Al film was of uniform thickness which can be explained by a high island nucleation density. The cold Nb films had an undulating surface, caused by the lack of surface atom mobility during deposition. There was no evidence of Al-Nb interdiffusion, even after postdeposition heating to 300 °C. Auger spectroscopy, transmission electron microscopy, and scanning electron microscopy were needed to obtain these definitive conclusions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338334
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Rates of change in high temperature electrical resistivity and oxygen diffusion coefficient in Ba2YCu3Ox (1988)
    Springer
    Applied physics 45 (1988), S. 179-183 
    Details
    ISSN: 1432-0630
    Keywords: 74 ; 66.30 ; 82.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The change in electrical resistance with time for bulk, thick-film, and thin-film Ba2YCu3Ox at atmospheric pressure is described as a function of the oxygen partial pressure (100 to 0.001%) and temperature (320°–750°C). The potential usefulness of these materials as oxygen sensors is demonstrated. The rate of equilibration is faster during oxygen uptake than during its loss. Time constants τ to reach equilibration (1/e remaining), qualitatively scale with sample dimensions. For a 1μm film at 600° C,τ 〈1 s for the range of PO2 (O2 being a shorthand for O2) from 100% to 0.001%. The rate increases markedly with increasing PO2. The actual resistance decreases with PO2 at a rate of logρ/log PO2 = 0.4 at 700° C showing adequate sensitivity for sensor purposes. Times for the transient resistance change in the sample where used to estimate the oxygen diffusion coefficient in the ceramic. The diffusivities obtained are 4·10−11−1·10−12 cm2/s in the 435°–320° C range, with an activation energy of ≅27 kcal/mole.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615001
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    Paper (German National Licenses)
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