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  • 1990-1994  (7)
  • 1990  (7)
Material
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  • 1990-1994  (7)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Surgical and radiologic anatomy 12 (1990), S. 241-246 
    ISSN: 1279-8517
    Keywords: Palm of the hand ; Blood supply ; Blood vessels ; Reimplantation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Résumé Trente membres supérieurs de sujets adultes ont été étudiés. Les vaisseaux sanguins de la main ont été analysés sur des angiographies, des coupes anatomiques et des dissections sous microscope. Les artères de la paume sont disposées en trois plans dans la partie moyenne, alors que dans les segments sous-jacents, elles sont disposées en deux plans seulement. La disposition des territoires dépendant des aa. radiale et ulnaire n'est pas la même dans chaque plan. Il existe trois voies anastomotiques entre les aa. radiale et ulnaire dans le sens paume-dos de la main. Les possibilités de réimplantation après amputation transpalmaire ont été envisagées grâce à l'étude dynamique de la circulation, à des coupes et à l'analyse des anastomoses artérielles entre ces trois plans.
    Notes: Summary Thirty adult upper extremities were used to study the blood vessels of the hand by angiography, cross-sectional measurement and operative microscopic dissection. The arteries in the middle segment of the palm are arranged in three planes, while in the upper or lower segment there are two planes only. The division of the territories of the radial and ulnar arteries are not same in the three different layers. There are three main anastomotic pathways between the radial and ulnar arteries in the radial-ulnar direction, while in the palmar-dorsal direction there are three anastomotic zones between the palmar and dorsal planes. According to the rate of appearance, sources, cross-sectional area, irrigation territories and anastomoses of the arteries in the three segments, the clinical significance in the reimplantation of the amputated hand through the palm has been discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 4447-4452 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoemission spectra of Ru3(CO)12 adsorbed on polycrystalline ordered and disordered Cu3Au surfaces and its decomposition products induced by zero order light and electron bombardment are reported. The results are compared with multiple-scattering–X-alpha (MS–Xα) calculations and recent studies of Ru3(CO)12 on Cu.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The threshold voltage (VT) degradation metal-oxide-semiconductor field-effect transistors (MOSFETs) with thermally nitrided oxide or pure oxide as gate dielectric was determined under Fowler–Nordheim (FN) stressing. A typical VT turnaround behavior was observed for both kinds of devices. The VT for nitrided oxide MOSFETs shifts more negatively than that for pure oxide MOSFETs during the initial period of FN stressing whereas the opposite is true for the positive shift after the critical time at turnaround point. The discovery that the shift of substrate current peak exhibits similar turnaround behavior reinforces the above results. In the meantime, the field-effect electron mobility and the maximum transconductance in the channel for nitrided oxide MOSFETs are only slightly degraded by stressing as compared to that for pure oxide MOSFETs. The VT turnaround behavior can be explained as follows: Net trapped charges in the oxide are initially positive (due to hole traps in the oxide) and result in the negative shift of VT. With increasing injection time, trapped electrons in the oxide as well as acceptortype interface states increase. This results in the positive shift in VT. It is revealed that VT degradation in MOSFETs is dominated by the generation of acceptortype interface states rather than electron trapping in the oxide after the critical time.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2217-2219 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device quality SiO2 films with a thickness of 15 nm have been thermally nitrided in NH3 by a rapid thermal processing technique. The properties of the interface between these films and a Si substrate have been investigated by a conductance technique. The results show that the nitridation increases the density and time constant of interface states and enhances the fluctuation of surface potential, but changes the hole capture cross section only slightly. Specifically, nitridation introduces a peak of interface states at 0.25 eV below midgap and the energy dependency of hole capture cross section is suppressed. Using a patchwork model, the surface potential fluctuation can be well simulated and a surface charge nonuniformity with a long-wavelength distribution may exist. These are consistent with the fact that nitridation induces a high oxide charge density. Experimental data show that all these properties depend on nitridation time and temperature.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 347 (1990), S. 658-660 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Two types of reversible processes, photochemical cis-trans isomerization (see, for example, ref. 3) and electrochemical oxidation-reduction4, are available in an azobenzene system.FIG. 1 Cyclic voltammograms of trans (dashed line) and cis (solid line) ABD monolayer films on a Sn02 glass electrode. ...
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1573-7381
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Structurally normal myelin sheaths develop in the spinal cord of juvenile myelin-deficient rats (mdr) 11 days after transplantation of normal fetal spinal cord fragments or cultured cells that do not yet express galactocerebroside. Cultures result in more extensive myelin formation, and in both cases the myelin that forms is located primarily at or near the site of transplantation. Myelin formation also occurs after transplantation of postnatal donor tissue, but the extent diminishes with donor age, and none was seen after transplantation of adult donor tissue over the two-week period studied. Injection of killed tissue, tissue derived from mouse donors or an extract of myelin also did not lead to myelin formation. The results imply that myelin formed in the host following transplantation was generated by oligodendrocytes newly differentiated from donor precursor cells rather than by donor oligodendrocytes that were already mature at the time of transplantation or by host oligodendrocytes that took up components of the injected material. We conclude that exogenous fetal glial cell precursors are able to survive, differentiate and form myelin in the environment of the juvenile mdr spinal cord.
    Type of Medium: Electronic Resource
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