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  • 1
    Electronic Resource
    Electronic Resource
    Intersubband transitions in partially interdiffused GaAs/AlGaAs multiple quantum-well structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2195-2199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous tuning over the entire 8–12 μm wavelength range is demonstrated for the intersubband absorption resonance in n-doped GaAs/AlxGa1−xAs multiple quantum-well structures following partial interdiffusion of the well and barrier layers via rapid thermal annealing. The data indicate that redshifting of the intersubband absorption resonance arises both from interdiffusion-induced modification of the confining potential and from a decrease in the depolarization shift. The latter effect is due in part to a decrease in the free-carrier concentration within the Si-doped quantum wells following rapid thermal annealing. Significant diffusion of the localized Si dopant is also observed over the range of annealing temperatures investigated here. Calculated values of the Al-Ga interdiffusion coefficient, as a function of anneal temperature, indicate that Si diffusion through the heterointerfaces contributes substantially to layer intermixing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350334
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 971-974 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Be-doped epitaxial layers of GaAs grown by molecular beam epitaxy have been studied by local vibrational mode spectroscopy combining infrared absorption and Raman scattering. Calibration factors for both experimental techniques have been derived which enable quantitative assessments to be made of the concentrations of Be acceptors in GaAs. In Raman spectroscopy the detection limit is ≈ 3×1018 cm−3 for as-grown layers only 10 nm in thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347289
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Redistribution of epitaxial Si on (001) GaAs during overgrowth by GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2730-2732 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examine the stability of pseudomorphic submonolayer Si films embedded in (001) GaAs by molecular-beam epitaxy. Secondary ion-mass spectrometry depth profiling reveals the presence of 1019 Si-atoms/cm3 in the first 40 nm of the GaAs cap layer. The systematic investigation of samples having different cap thickness by Hall effect measurements and local vibrational mode Raman spectroscopy allows us to identify the site distribution of Si atoms in the cap layer and yields insight into the migration mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105898
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    1H NMR and molecular mechanics studies of epimeric ethyl esters of 20(R, S)-hydroxy-23-norcholanoic acids (1991)
    Chichester : Wiley-Blackwell
    Organic Magnetic Resonance 29 (1991), S. 137-142 
    Details
    ISSN: 0749-1581
    Keywords: 20(R,S)-Hydroxy-23-norcholanoic acid derivatives ; 1H NMR ; Pyridine-induced shifts ; Molecular mechanics calculations ; Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Proton chemical shifts for the C-18, C-21, —CO2CH2CH3 and —CO2CH2CH3 protons of epimeric ethyl esters of 20(R,S)-hydroxy-23-norcholanoic acids were measured in deuteriochloroform and pyridine-d5. The observed solvent shifts due to specific OH - pyridine hydrogen-bonded complexes allowed the quantification of the epimeric mixtures by analysis of the pyridine-d5 1H NMR spectra. The main features of the pyridine-induced shifts are rationalized in terms of the preferred conformations for the 20R- and 20S-epimers, which are predicted by molecular mechanics calculations.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/mrc.1260290208
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    Paper (German National Licenses)
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