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  • 1990-1994  (15)
  • 1994  (15)
  • 1
    Electronic Resource
    Electronic Resource
    Tire Liquefaction and Its Effect on Coal Liquefaction (1994)
    s.l. : American Chemical Society
    Energy & fuels 8 (1994), S. 607-612 
    Details
    ISSN: 1520-5029
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ef00045a015
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  • 2
    Electronic Resource
    Electronic Resource
    Variable Energy Photoelectron Spectroscopy of M(.eta.3-C3H5)2 (M = Ni, Pd, and Pt): Molecular Orbital Assignments (1994)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 116 (1994), S. 9543-9554 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00100a019
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  • 3
    Electronic Resource
    Electronic Resource
    II-VI compound thin-film deposition by resonant laser sputtering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3098-3104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved laser-induced fluorescence measurements indicate that Zn atoms excited to the 4 3PJ metastable state react rapidly with group-VI molecules O2, CS2, and H2S. Rate constants for these processes are presented. Based on these data, a method for deposition of thin films of the ZnO or ZnS products of these reactions is demonstrated, wherein the Zn atoms are both sputtered from a target and excited to the 4 3PJ state by near-resonant radiation from a pulsed XeCl laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356161
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial growth of RbTiOPO4 films on KTiOPO4 substrates by excimer laser ablation technique (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8215-8217 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent single-phase rubidium titanyl phosphate (RTP) films having excellent crystalline properties have been deposited by excimer laser ablation method on (001)- and (010)-oriented potassium titanyl phosphate (KTP) substrates, respectively. X-ray θ-2θ scans and pole figures showed that the laser-ablated RTP films grew epitaxially on, and had exactly the same orientations of, the underlying KTP substrates. X-ray photoelectron spectroscopy analysis revealed that the RTP films prepared with this method are nearly stoichiometric. It appears to be possible to use these films as waveguides having sharp waveguide/substrate interfaces. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357884
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  • 5
    Electronic Resource
    Electronic Resource
    Studies on diamondlike carbon films for antireflection coatings of infrared optical materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 705-707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamondlike carbon (DLC) films were directly deposited onto germanium (Ge) and zinc sulphide (ZnS) slices by a capacitively coupled 13.56 MHz rf glow discharge plasma with Ar-C2H2 gas mixtures. The IR transmittance was measured using a Fourier-transform infrared spectrometer. The maximum values of the IR transmission of Ge and ZnS with DLC films on both sides are 99% and 95.8%, respectively, which come up to the theoretical values. A nonuniform DLC film, of which the refractive index gradually changes along the thickness, has been successfully deposited onto a Ge slice for the first time and the IR transmission of a nonuniform DLC film coated onto both sides of a Ge substrate at the wider wave band of 2.5–15 μm is over 85%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357813
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  • 6
    Electronic Resource
    Electronic Resource
    Scaling behavior of virgin magnetization curve of DyBa2Cu3Oy crystal prepared by melt-textured growth method (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1329-1330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization curves of a DyBa2Cu3Oy crystal prepared by the melt-textured growth method were measured from 10 to 85 K with the magnetic field parallel to the c axis. The scaling behavior of the virgin magnetization curves is observed and explained in terms of an extended Bean model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357796
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  • 7
    Electronic Resource
    Electronic Resource
    Reynolds number similarity of orthogonal decomposition of the outer layer of turbulent wall flow (1994)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 6 (1994), S. 2815-2819 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental evidence is presented to show that in the outer region of wall-bounded turbulent flow, both the eigenfunctions and the eigenvalue spectra of the one-dimensional proper orthogonal decomposition have forms that are independent of Reynolds number when scaled by the wall friction velocity and the outer length scale.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.868169
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  • 8
    Electronic Resource
    Electronic Resource
    Formation mechanism of TiC by mechanical alloying (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2666-2668 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium carbide (TiC) has been synthesized by mechanically alloying the elemental powder mixture of titanium and graphite at composition of Ti1−xCx (x=0.35, 0.43, 0.50). Under the employed milling condition, the formation of TiC has been found to undergo an abrupt, exothermic reaction. The final product is TiC for x=0.43 and 0.50, and TiC+Ti (small amount) for x=0.35. It is suggested that this reaction appears to be a self-sustained high-temperature synthesis process. The initial milling stage seems to be an incubation duration for the reaction, and the mechanical impacts to be the ignition of the following abrupt reaction. It is believed that this type of reaction is an important mechanism for mechanical alloying of the highly exothermic alloy systems. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112596
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial growth of optical Ba2NaNb5O15 waveguide film by pulsed laser deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1995-1997 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The waveguiding Ba2NaNb5O15 films have been prepared on KTiOPO4 substrates by pulsed laser deposition technique. Characterizations of the as-grown films by the x-ray θ–2θ scan and β scan and the scanning electron microscopy revealed that epitaxial (110)-oriented Ba2NaNb5O15 films with small surface roughness were achieved on (100)-oriented KTiOPO4 plates. The x-ray photoelectron spectrometer was employed to probe the chemical constitution of the as-grown films. Favorable optical waveguiding properties were demonstrated by m-line measurement and evaluation of propagation loss on the order of 1.0 dB/cm of TM and TE multimodes. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112841
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  • 10
    Electronic Resource
    Electronic Resource
    Characteristics of ferroelectric 60/40 PZT films deposited by metallo-organic decomposition technology for memory applications (1994)
    Springer
    Journal of materials science 5 (1994), S. 173-179 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Nearly pin-hole-free ferroelectric films of Pb(Zr0.6Ti0.4)O3 (PZT) with uniform compositions and thicknesses were synthesized using metallo-organic decomposition (MOD) technology. The metallo-organic precursors used for these PZT films were lead diethylhexanoate, (Pb(C7H15COO)2), titanium dimethoxy-dineodecanoate (Ti(OCH3)2 (C9 H19 COO)2), and zirconium tetraethylhexanoate (Zr(C7H15COO)4). The film thickness, structural development and electrical properties of these films were characterized using a surface profilometer, X-ray diffraction (XRD) and a standardized RT 66 ferroelectric test system. The effect of the processing conditions on the properties of ferroelectric 60/40 PZT films were investigated. The important processing parameters studied included the substrate history, the spinning speed and time, the film thickness, the pyrolysing temperature and the annealing conditions. The experimental results show that the structural development and electrical properties of these 60/40 PZT films are closely correlated with these processing parameters. The polarization-reversal characteristics and fatigue behaviour, which are important for non-volatile memory applications, were also studied. By optimizing the annealing conditions, a 60/40 PZT film exhibited a dielectric strength of 1 MVcm−1 and a sensed remanent polarization value of 9.3 ΜC cm2 after cycling 1010 times. This demonstrates the excellent potential of PZT films for non-volatile memory applications. The measured dielectric-constant values for these 60/40 PZT films were in the range of 300 to 900, which is about 75 to 220 times larger than that of the currently used dielectric, SiO2, in dynamic random-access memory (DRAM). This fact suggests that PZT film is an excellent alternative for the new generation, extremely high-density DRAM applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01198950
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