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  • 1995-1999  (3)
  • 1996  (1)
  • 1995  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Polycrystalline silicon formed by ultrahigh-vacuum sputtering system (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 217-223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an ultrahigh-vacuum (UHV) sputtering system, we could grow two new methods of polycrystalline silicon films. The one is as-deposited polycrystalline silicon on glass at substrate temperatures under 500 °C. The other is solid-phase-crystallization by thermal annealing of as-deposited amorphous silicon films in a UHV. As-deposited polycrystalline silicon films were oriented to (220) and grain sizes were determined from half-width of x-ray diffraction to be about 40 nm. From the deposition temperature dependence of the x-ray diffraction peak intensity, the activation energy of the crystalline growth was calculated to be about 0.6 eV. Hydrogen atoms in the sputtering gas lower the reproducibility of as-deposited poly-Si. Polycrystalline silicon films produced by thermal annealing of as-deposited amorphous silicon films at 550 °C in UHV have a (111) orientation. Field-effect mobilities of the as-deposited polycrystalline silicon film and the polycrystalline silicon film by UHV thermal annealing were 5 and 18 cm2/V s, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360782
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of hydrogen ion shower doping in polycrystalline silicon thin-film transistors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 31-33 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the effect of hydrogen ion shower doping on polycrystalline silicon thin-film transistors (p-Si TFTs). Hydrogen atoms were introduced to the channel region of p-Si TFTs by PH3/H2 ion shower doping of the source/drain contact. Hydrogen concentration in the channel region can be controlled by altering the gate metal thickness. Hydrogen atoms affect the TFT's threshold voltage shifts until it becomes negative, in n-type TFTs. The threshold voltage shift depends on the hydrogen content of the channel region in p-Si TFTs. This is explained by the existence of Si−3 trap states in the grain boundaries. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114171
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  • 3
    Electronic Resource
    Electronic Resource
    Patient with both lupus anticoagulant and acute disseminated encephalomyelitis (1996)
    Springer
    Clinical rheumatology 15 (1996), S. 501-503 
    Details
    ISSN: 1434-9949
    Keywords: Acute Disseminated Encephalomyelitis ; Convulsion ; Diphenylhydantoin ; Lupus Anticoagulant ; Pulse Methylprednisolone Therapy ; Type IV-Hypersensitivity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary We present the unusual case of 16-year-old girl who developed intractable convulsions five days after the onset of a cold. Meningeal signs, lymphopenia, proteinuria, and lupus anticoagulant were also present. Treatment with anticonvulsants, antituberculous agents, and adenine arabinoside were ineffective. The initiation of methylprednisolone pulse therapy immediately resolved convulsions and fever. The diagnosis, suggested by the clinical course and the marked improvement of the meningoencephalitis by pulse therapy, was an encephalitic form of acute disseminated encephalomyelitis. Clinical and laboratory findings indicated that an immune disorder may have triggered an abnormal response to a viral infection leading to this patient's neurologic disorder.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02229651
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